| A threshold voltage model of silicon-nanotube-based ultrathin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects A Kumar, S Bhushan, PK Tiwari IEEE Transactions on Nanotechnology 16 (5), 868-875, 2017 | 47 | 2017 |
| Analytical modeling of subthreshold characteristics of ultra-thin double gate-all-around (DGAA) MOSFETs incorporating quantum confinement effects A Kumar, S Bhushan, PK Tiwari Superlattices and Microstructures 109, 567-578, 2017 | 24 | 2017 |
| An insight into self-heating effects and its implications on hot carrier degradation for silicon-nanotube-based double gate-all-around (DGAA) MOSFETs A Kumar, P Srinivas, PK Tiwari IEEE Journal of the Electron Devices Society 7, 1100-1108, 2019 | 15 | 2019 |
| Self-heating effects and hot carrier degradation in In0. 53Ga0. 47As gate-all-around MOSFETs P Srinivas, A Kumar, S Jit, PK Tiwari Semiconductor Science and Technology 35 (6), 065008, 2020 | 13 | 2020 |
| An Explicit Unified Drain Current Model for Silicon-Nanotube-Based Ultrathin Double Gate-All-Around mosfets A Kumar, PK Tiwari IEEE Transactions on Nanotechnology 17 (6), 1224-1234, 2018 | 13 | 2018 |
| Drain current modelling of double gate‐all‐around (DGAA) MOSFETs A Kumar, S Bhushan, PK Tiwari IET circuits, devices & systems 13 (4), 519-525, 2019 | 12 | 2019 |
| Physical insight into self-heating effects in ultrathin junctionless gate-all-around FETs A Kumar, P Srinivas, PK Tiwari 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-4, 2019 | 8 | 2019 |
| An analytical subthreshold current model of short-channel symmetrical double gate-all-around (DGAA) field-effect-transistors S Bhushan, A Kumar, D Gola, PK Tiwari 2017 Devices for Integrated Circuit (DevIC), 211-215, 2017 | 6 | 2017 |
| Compact Drain Current Model of Silicon-Nanotubebased Double Gate-All-Around (DGAA) MOSFETs Incorporating Short Channel Effects A Kumar, P Srinivas, PK Tiwari 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2019 | 5 | 2019 |
| Physical insight into self-heating induced performance degradation in RingFET S Singh, P Srinivas, A Kumar, PK Tiwari Silicon, 1-9, 2021 | 2 | 2021 |
| Analytical Threshold Voltage Model of Schottky-source/drain (Schottky-S/D) double gate-all-around (DGAA) Field-Effect-Transistors (FETs) A Kumar, P Srinivas, PK Tiwari 2019 Devices for Integrated Circuit (DevIC), 89-93, 2019 | 1 | 2019 |
| In0.53Ga0.47As Nanosheet MOSFETs with Self-Heating Effects P Srinivas, A Kumar, PK Tiwari 2022 IEEE Silchar Subsection Conference (SILCON), 1-6, 2022 | | 2022 |
| Silicon Nanotube FETs: From Device Concept to Analytical Model Development A Kumar, PK Tiwari Low-Dimensional Nanoelectronic Devices, 153-171, 2022 | | 2022 |
| Effect of self-heating on small-signal parameters of In0. 53Ga0. 47As based gate-all-around MOSFETs P Srinivas, A Kumar, PK Tiwari Semiconductor Science and Technology 36 (12), 125012, 2021 | | 2021 |
| Threshold Voltage Modeling of tri-Gate Schottky-Barrier (TGSB) Field-Effect-Transistors (FETs) P Srinivas, A Kumar, PK Tiwari Silicon 13, 25-35, 2021 | | 2021 |
| Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs A Kumar, P Srinivas, PK Tiwari 2019 IEEE International Symposium on Smart Electronic Systems (iSES …, 2019 | | 2019 |
| Threshold Voltage Modeling of Double Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors (DGAA MOSFETs) Including the Fringing Field Effects A Kumar, P Srinivas, S Bhushan, S Dubey, YK Singh, PK Tiwari Journal of Nanoelectronics and Optoelectronics 14 (11), 1555-1564, 2019 | | 2019 |
| Effects of Lateral Spreading in 2-Dimensional Non-Uniform Doped Junctionless FinFETs P Srinivas, A Kumar, PK Tiwari 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-4, 2019 | | 2019 |
| An analytical gate tunneling current model of Re-S/D SOI MOSFETs PK Tiwari, A Kumar, D Talukdar 2016 IEEE Uttar Pradesh Section International Conference on Electrical …, 2016 | | 2016 |
