| Growth of highly conductive Al-rich AlGaN: Si with low group-III vacancy concentration AS Almogbel, CJ Zollner, BK Saifaddin, M Iza, J Wang, Y Yao, M Wang, ... AIP Advances 11 (9), 2021 | 23 | 2021 |
| Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments MS Wong, J Back, D Hwang, C Lee, J Wang, S Gandrothula, T Margalith, ... Applied Physics Express 14 (8), 086502, 2021 | 20 | 2021 |
| Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder KS Qwah, M Monavarian, G Lheureux, J Wang, YR Wu, JS Speck Applied Physics Letters 117 (2), 2020 | 18 | 2020 |
| Over 1 kV vertical GaN-on-GaN pn diodes with low on-resistance using ammonia molecular beam epitaxy E Farzana, J Wang, M Monavarian, T Itoh, KS Qwah, ZJ Biegler, ... IEEE Electron Device Letters 41 (12), 1806-1809, 2020 | 16 | 2020 |
| III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage J Wang, EC Young, WY Ho, B Bonef, T Margalith, JS Speck Semiconductor Science and Technology 35 (12), 125026, 2020 | 14 | 2020 |
| High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters J Wang, BK SaifAddin, CJ Zollner, B Bonef, AS Almogbel, Y Yao, M Iza, ... Optics Express 29 (25), 40781-40794, 2021 | 7 | 2021 |
| Hybrid III-nitride tunnel junctions for low excess voltage blue LEDs and UVC LEDs J Wang, E Young, B SaifAddin, C Zollner, A Almogbel, M Fireman, M Izza, ... 2019 Compound Semiconductor Week (CSW), 1-1, 2019 | 5 | 2019 |
| Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches J Wang, KF Jorgensen, E Farzana, KS Qwah, M Monavarian, ZJ Biegler, ... APL Materials 9 (8), 2021 | 4 | 2021 |
| Method and system for fabricating regrown fiducials for semiconductor devices CD Karthik Suresh Arulalan, Jianfeng Wang, Sharlene Wilson, Mark Curtice ... US Patent US20230230931A1, 2023 | | 2023 |
| (Invited) Vertical GaN Devices for High-Power Electronics E Farzana, J Wang, KF Jorgensen, KS Qwah, M Monavarian, T Itoh, ... Electrochemical Society Meeting Abstracts 240, 1004-1004, 2021 | | 2021 |
| Development of III-Nitride Tunnel Junctions and pn Diodes by Ammonia-Assisted Molecular Beam Epitaxy J Wang University of California, Santa Barbara, 2020 | | 2020 |
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
