Divya Somvanshi

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Satyabrata JitIndian Institute of Technology (Banaras Hindu University) Varanasi, IndiaVerified email at iitbhu.ac.in
Chandan KumarAssistant Professor at Supaul College of Engineering, Bihar, IndiaVerified email at bihar.gov.in
Amritanshu PandeyDepartment of Electronics Engineering, Indian Institute of Technology (BHU) VaranasiVerified email at iitbhu.ac.in
A. G. Unil PereraRegent's Professor of Physics, Georgia State UniversityVerified email at gsu.edu
Dilip ChauhanIntel CorporationVerified email at intel.com
lianhe liUniversity of LeedsVerified email at leeds.ac.uk
Sangeeth KallattUniversity of CopenhagenVerified email at nbi.ku.dk
Kausik MajumdarIndian Institute of ScienceVerified email at iisc.ac.in
Dr. Debjani KarmakarScientist, Bhabha Atomic Research Centre; visiting professor at Uppsala UniversityVerified email at barc.gov.in
John Kiran AnthonyScientist, HoribaVerified email at horiba.com
Aniruddh bahadur yadavAssociate Professor, ECE Dept, VR Siddhartha Engineering CollegeVerified email at itbhu.ac.in
Hemant KumarAssistant Professor, Jaypee Institute of Information TechnologyVerified email at mail.jiit.ac.in
R D S YadavaBanaras Hindu University, Varanasi; Solid State Physics Laboratory, DelhiVerified email at bhu.ac.in
Eilam YalonTechnion, Israel Institute of TechnologyVerified email at technion.ac.il
Eric PopPease-Ye Professor of Electrical Eng., Materials Science, Applied Physics, Stanford and SLACVerified email at stanford.edu
Suraj P KhannaSenior Principal Scientist, CSIR-National Physical Laboratory and Honorary Professor, AcSIRVerified email at nplindia.org
Prabha VermaProject Scientist, National Centre For Flexible Electronics, Indian Institute of Technology,KanpurVerified email at iitk.ac.in

Divya Somvanshi

Assistant Professor, Department of Physics, Harcourt Butler Technical University (HBTU) Kanpur

Verified email at hbtu.ac.in

2D Materials Nanoelectronic devices Heterostructures


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Nature of carrier injection in metal/2D-semiconductor interface and its implications for the limits of contact resistance D Somvanshi, S Kallatt, C Venkatesh, S Nair, G Gupta, JK Anthony, ... Physical Review B 96 (20), 205423, 2017	79	2017
Ultraviolet Detection Properties of p-Si/n-TiO₂Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study G Rawat, D Somvanshi, H Kumar, Y Kumar, C Kumar, S Jit IEEE Transactions on Nanotechnology 15 (2), 193-200, 2015	70	2015
Mean barrier height and Richardson constant for Pd/ZnO thin film-based Schottky diodes grown on n-Si substrates by thermal evaporation method D Somvanshi, S Jit IEEE electron device letters 34 (10), 1238-1240, 2013	65	2013
Sol-gel-based highly sensitive Pd/n-ZnO thin film/n-Si Schottky ultraviolet photodiodes AB Yadav, A Pandey, D Somvanshi, S Jit IEEE Transactions on Electron Devices 62 (6), 1879-1884, 2015	57	2015
Analysis of temperature-dependent electrical characteristics of n-ZnO nanowires (NWs)/p-Si heterojunction diodes D Somvanshi, S Jit IEEE transactions on nanotechnology 13 (1), 62-69, 2013	55	2013
Electrical and ultraviolet-A detection properties of E-beam evaporated n-TiO2 capped p-Si nanowires heterojunction photodiodes G Rawat, D Somvanshi, Y Kumar, H Kumar, C Kumar, S Jit IEEE Transactions on Nanotechnology 16 (1), 49-57, 2016	42	2016
Effective Richardson Constant of Sol-Gel Derived TiO₂ Films in n-TiO₂/p-Si Heterojunctions G Rawat, H Kumar, Y Kumar, C Kumar, D Somvanshi, S Jit IEEE Electron Device Letters 38 (5), 633-636, 2017	35	2017
Improved Current Density and Contact Resistance in Bilayer MoSe₂ Field Effect Transistors by AlO_x Capping D Somvanshi, E Ber, CS Bailey, E Pop, E Yalon ACS applied materials & interfaces 12 (32), 36355-36361, 2020	34	2020
Analysis of I–V characteristics of Pd/ZnO thin film/n-Si schottky diodes with series resistance D Somvanshi, S Jit Journal of Nanoelectronics and Optoelectronics 9 (1), 21-26, 2014	32	2014
Transition metal dichalcogenides based two-dimensional heterostructures for optoelectronic applications D Somvanshi, S Jit 2D Nanoscale Heterostructured Materials, 125-149, 2020	27	2020
Pd/ZnO nanoparticles based Schottky ultraviolet photodiodes grown on Sn-coated n-Si substrates by thermal evaporation method D Somvanshi, S Jit IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 120-125, 2014	27	2014
Ultraviolet detection characteristics of Pd/n-ZnO thin film Schottky photodiodes grown on n-Si substrates D Somvanshi, A Pandey, S Jit Journal of nanoelectronics and optoelectronics 8 (4), 349-354, 2013	22	2013
A systematic study on the electronic structure of 3d, 4d, and 5d transition metal-doped WSe2 monolayer S Chowdhury, P Venkateswaran, D Somvanshi Superlattices and Microstructures 148, 106746, 2020	16	2020
Effect of ZnO seed layer on the electrical characteristics of Pd/ZnO thin-film-based Schottky contacts grown on n-Si substrates D Somvanshi, S Jit IEEE Transactions on Nanotechnology 13 (6), 1138-1144, 2014	15	2014
Effects of Sn and Zn seed layers on the electrical characteristics of Pd/ZnO thin-film Schottky diodes grown on n-Si substrates D Somvanshi, S Jit IEEE Electron Device Letters 35 (9), 945-947, 2014	14	2014
Functionalized polyvinyl chloride/layered double hydroxide nanocomposites and its thermal and mechanical properties M Singh, D Somvanshi, RK Singh, AK Mahanta, P Maiti, N Misra, P Paik Journal of Applied Polymer Science 137 (27), 48894, 2020	11	2020
Recent progress on extended wavelength and split-off band heterostructure infrared detectors H Ghimire, PVV Jayaweera, D Somvanshi, Y Lao, AGU Perera Micromachines 11 (6), 547, 2020	9	2020
Catalyst free growth of ZnO nanorods by thermal evaporation method D Somvanshi, S Jit AIP Conference Proceedings 1536 (1), 125-126, 2013	7	2013
Boosting Principal Component Analysis by Genetic Algorithm. D Somvanshi, RDS Yadava Defence Science Journal 60 (4), 2010	7	2010
Advances in 2D materials based mixed-dimensional heterostructures photodetectors: Present status and challenges D Somvanshi, S Jit Materials Science in Semiconductor Processing 164, 107598, 2023	6	2023

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