| Extra storage capacity in transition metal oxide lithium-ion batteries revealed by in situ magnetometry Q Li, H Li, Q Xia, Z Hu, Y Zhu, S Yan, C Ge, Q Zhang, X Wang, X Shang, ... Nature materials 20 (1), 76-83, 2021 | 488 | 2021 |
| Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films C Wang, K Jin, Z Xu, L Wang, C Ge, H Lu, H Guo, M He, G Yang Applied Physics Letters 98 (19), 2011 | 391 | 2011 |
| Artificial synapses emulated by an electrolyte‐gated tungsten‐oxide transistor JT Yang, C Ge, JY Du, HY Huang, M He, C Wang, HB Lu, GZ Yang, KJ Jin Advanced Materials 30 (34), 1801548, 2018 | 375 | 2018 |
| Reproducible ultrathin ferroelectric domain switching for high‐performance neuromorphic computing J Li, C Ge, J Du, C Wang, G Yang, K Jin Advanced Materials 32 (7), 1905764, 2020 | 174 | 2020 |
| Evidence for a crucial role played by oxygen vacancies in LaMnO3 resistive switching memories Z Xu, K Jin, L Gu, Y Jin, C Ge, C Wang, H Guo, H Lu, R Zhao, G Yang small 8 (8), 1279-1284, 2012 | 163 | 2012 |
| A ferrite synaptic transistor with topotactic transformation C Ge, C Liu, Q Zhou, Q Zhang, J Du, J Li, C Wang, L Gu, G Yang, K Jin Advanced Materials 31 (19), 1900379, 2019 | 147 | 2019 |
| Electrolyte‐gated synaptic transistor with oxygen ions HY Huang, C Ge, QH Zhang, CX Liu, JY Du, JK Li, C Wang, L Gu, ... Advanced Functional Materials 29 (29), 1902702, 2019 | 118 | 2019 |
| Photo-induced non-volatile VO2 phase transition for neuromorphic ultraviolet sensors G Li, D Xie, H Zhong, Z Zhang, X Fu, Q Zhou, Q Li, H Ni, J Wang, E Guo, ... Nature communications 13 (1), 1729, 2022 | 112 | 2022 |
| Metal–insulator transition induced by oxygen vacancies from electrochemical reaction in ionic liquid‐gated manganite films C Ge, KJ Jin, L Gu, LC Peng, YS Hu, HZ Guo, HF Shi, JK Li, JO Wang, ... Advanced Materials Interfaces 2 (17), 1500407, 2015 | 87 | 2015 |
| A calibratable sensory neuron based on epitaxial VO2 for spike-based neuromorphic multisensory system R Yuan, Q Duan, PJ Tiw, G Li, Z Xiao, Z Jing, K Yang, C Liu, C Ge, ... Nature communications 13 (1), 3973, 2022 | 85 | 2022 |
| Novel multifunctional properties induced by interface effects in perovskite oxide heterostructures K Jin, H Lu, K Zhao, C Ge, M He, G Yang Advanced Materials 21 (45), 4636-4640, 2009 | 85 | 2009 |
| The oxygen vacancy effect on the magnetic property of the LaMnO3− δ thin films R Zhao, K Jin, Z Xu, H Guo, L Wang, C Ge, H Lu, G Yang Applied Physics Letters 102 (12), 2013 | 81 | 2013 |
| Self-driven visible-blind photodetector based on ferroelectric perovskite oxides J Li, C Ge, K Jin, J Du, J Yang, H Lu, G Yang Applied Physics Letters 110 (14), 2017 | 79 | 2017 |
| The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties H Guo, J Wang, X He, Z Yang, Q Zhang, K Jin, C Ge, R Zhao, L Gu, ... Advanced Materials Interfaces 3 (5), 1500753, 2016 | 78 | 2016 |
| Electro-photo double modulation on the resistive switching behavior and switchable photoelectric effect in BiFeO3 films L Wang, K Jin, C Ge, C Wang, H Guo, H Lu, G Yang Applied Physics Letters 102 (25), 2013 | 76 | 2013 |
| A robust neuromorphic vision sensor with optical control of ferroelectric switching J Du, D Xie, Q Zhang, H Zhong, F Meng, X Fu, Q Sun, H Ni, T Li, E Guo, ... Nano Energy 89, 106439, 2021 | 75 | 2021 |
| Reacquainting the Electrochemical Conversion Mechanism of FeS2 Sodium-Ion Batteries by Operando Magnetometry Z Li, Y Zhang, X Li, F Gu, L Zhang, H Liu, Q Xia, Q Li, W Ye, C Ge, H Li, ... Journal of the American Chemical Society 143 (32), 12800-12808, 2021 | 73 | 2021 |
| Numerical investigation into the switchable diode effect in metal-ferroelectric-metal structures C Ge, KJ Jin, C Wang, HB Lu, C Wang, GZ Yang Applied Physics Letters 99 (6), 2011 | 67 | 2011 |
| Highly sensitive and ultrafast deep UV photodetector based on a β-Ga2O3 nanowire network grown by CVD J Du, J Xing, C Ge, H Liu, P Liu, H Hao, J Dong, Z Zheng, H Gao Journal of Physics D: Applied Physics 49 (42), 425105, 2016 | 63 | 2016 |
| Gating-induced reversible HxVO2 phase transformations for neuromorphic computing C Ge, G Li, Q Zhou, J Du, E Guo, M He, C Wang, G Yang, K Jin Nano Energy 67, 104268, 2020 | 60 | 2020 |
