The effects of nitrogen plasma on reactive-ion etching induced damage in GaN Z Mouffak, A Bensaoula, L Trombetta Journal of applied physics 95 (2), 727-730, 2004 | 56 | 2004 |
Applications of metallic borides for gate electrodes in CMOS integrated circuits W Zagozdzon-Wosik, C Darne, D Radhakrishnan, I Rusakova, ... Rev. Adv. Mater. Sci 8, 185-194, 2004 | 24 | 2004 |
A photoluminescence study of plasma reactive ion etching-induced damage in GaN Z Mouffak, A Bensaoula, L Trombetta Journal of Semiconductors 35 (11), 113003, 2014 | 10 | 2014 |
MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si X Yu, L Shao, QY Chen, L Trombetta, C Wang, B Dharmaiahgari, X Wang, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006 | 10 | 2006 |
Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth L Shao, PE Thompson, J Bennett, BP Dharmaiahgari, L Trombetta, ... Applied physics letters 83 (14), 2823-2825, 2003 | 8 | 2003 |
Effect of photo-assisted RIE damage on GaN Z Mouffak, N Medelci-Djezzar, C Boney, A Bensaoula, L Trombetta MRS Internet Journal of Nitride Semiconductor Research 8, 1-4, 2003 | 6 | 2003 |
The influence of Sb doping on the growth and electronic properties of GaAs (100) and AlGaAs (100) KD Jamison, HC Chen, A Bensaoula, W Lim, L Trombetta, A Ignatiev Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989 | 4 | 1989 |
Nanogap capacitors used for impedance characterization of living cells D Padmaraj, W Zagozdzon-Wosik, JH Miller, J Charlson, L Trombetta MRS Online Proceedings Library (OPL) 952, 0952-F10-15, 2006 | 3 | 2006 |
Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors JK Mee, RAB Devine, L Trombetta, RJ Kaplar, P Gouker Microelectronics Reliability 51 (6), 1113-1117, 2011 | 2 | 2011 |
TRANSLATING AN HONORS INTRODUCTORY ENGINEERING COURSE FOR A NON-HONORS ELECTRICAL AND COMPUTER ENGINEERING (ECE) POPULATION: INITIAL DATA D de la Rosa-Pohl, L Trombetta, V Thomas | | 2014 |
Reduction in Susceptibility of MOS Devices to Radiation-and Electrically-Induced Defects L Trombetta, HOUSTON UNIV TX | | 2012 |
Competing Charge Relaxation Mechanisms in HfSiON Insulator Field Effect Transistors JK Mee, RAB Devine, L Trombetta ECS Transactions 33 (3), 545, 2010 | | 2010 |
Anamolous Drain Voltage Dependence in Bias Temparature Instability Measurements on High-k Field Effect Transistors. RJ Kaplar, JK Mee, RAB Devine, L Trombetta Journal of Applied Physics, 2010 | | 2010 |
Effect of photo-assisted RIE damage in GaN Schottky structures Z Mouffak, N Medelci-Djezzar, L Trombetta 2001 International Semiconductor Device Research Symposium. Symposium …, 2001 | | 2001 |
ELECTRICAL AND OPTICAL PROPERTIES OF GaAs GROWN BY CHEMICAL BEAM EPITAXY HC Chen, A Bensaoula, HD Shih, CC Horton, Y Zhang, P Chang, L Espoir, ... Electronic, Optical and Device Properties of Layered Structures, 221, 1990 | | 1990 |
Analysis of Anomalous Peak Heights in DLTS of MBE-Grown Aluminum Gallium Arsenide W Lim, LP Trombetta, K Jamison MRS Online Proceedings Library (OPL) 209, 427, 1990 | | 1990 |