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Len Trombetta
Len Trombetta
Electrical and Computer Engineering, University of Houston
Verified email at uh.edu - Homepage
Title
Cited by
Cited by
Year
The effects of nitrogen plasma on reactive-ion etching induced damage in GaN
Z Mouffak, A Bensaoula, L Trombetta
Journal of applied physics 95 (2), 727-730, 2004
562004
Applications of metallic borides for gate electrodes in CMOS integrated circuits
W Zagozdzon-Wosik, C Darne, D Radhakrishnan, I Rusakova, ...
Rev. Adv. Mater. Sci 8, 185-194, 2004
242004
A photoluminescence study of plasma reactive ion etching-induced damage in GaN
Z Mouffak, A Bensaoula, L Trombetta
Journal of Semiconductors 35 (11), 113003, 2014
102014
MeV-Si ion irradiation effects on the electrical properties of HfO2 thin films on Si
X Yu, L Shao, QY Chen, L Trombetta, C Wang, B Dharmaiahgari, X Wang, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
102006
Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth
L Shao, PE Thompson, J Bennett, BP Dharmaiahgari, L Trombetta, ...
Applied physics letters 83 (14), 2823-2825, 2003
82003
Effect of photo-assisted RIE damage on GaN
Z Mouffak, N Medelci-Djezzar, C Boney, A Bensaoula, L Trombetta
MRS Internet Journal of Nitride Semiconductor Research 8, 1-4, 2003
62003
The influence of Sb doping on the growth and electronic properties of GaAs (100) and AlGaAs (100)
KD Jamison, HC Chen, A Bensaoula, W Lim, L Trombetta, A Ignatiev
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989
41989
Nanogap capacitors used for impedance characterization of living cells
D Padmaraj, W Zagozdzon-Wosik, JH Miller, J Charlson, L Trombetta
MRS Online Proceedings Library (OPL) 952, 0952-F10-15, 2006
32006
Anomalous drain voltage dependence in bias temperature instability measurements on high-κ field effect transistors
JK Mee, RAB Devine, L Trombetta, RJ Kaplar, P Gouker
Microelectronics Reliability 51 (6), 1113-1117, 2011
22011
TRANSLATING AN HONORS INTRODUCTORY ENGINEERING COURSE FOR A NON-HONORS ELECTRICAL AND COMPUTER ENGINEERING (ECE) POPULATION: INITIAL DATA
D de la Rosa-Pohl, L Trombetta, V Thomas
2014
Reduction in Susceptibility of MOS Devices to Radiation-and Electrically-Induced Defects
L Trombetta, HOUSTON UNIV TX
2012
Competing Charge Relaxation Mechanisms in HfSiON Insulator Field Effect Transistors
JK Mee, RAB Devine, L Trombetta
ECS Transactions 33 (3), 545, 2010
2010
Anamolous Drain Voltage Dependence in Bias Temparature Instability Measurements on High-k Field Effect Transistors.
RJ Kaplar, JK Mee, RAB Devine, L Trombetta
Journal of Applied Physics, 2010
2010
Effect of photo-assisted RIE damage in GaN Schottky structures
Z Mouffak, N Medelci-Djezzar, L Trombetta
2001 International Semiconductor Device Research Symposium. Symposium …, 2001
2001
ELECTRICAL AND OPTICAL PROPERTIES OF GaAs GROWN BY CHEMICAL BEAM EPITAXY
HC Chen, A Bensaoula, HD Shih, CC Horton, Y Zhang, P Chang, L Espoir, ...
Electronic, Optical and Device Properties of Layered Structures, 221, 1990
1990
Analysis of Anomalous Peak Heights in DLTS of MBE-Grown Aluminum Gallium Arsenide
W Lim, LP Trombetta, K Jamison
MRS Online Proceedings Library (OPL) 209, 427, 1990
1990
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