| 1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device I Hwang, H Choi, JW Lee, HS Choi, J Kim, J Ha, CY Um, SK Hwang, J Oh, ... 2012 24th international symposium on power semiconductor devices and ICs, 41-44, 2012 | 121 | 2012 |
| Photonic quantum ring JC Ahn, KS Kwak, BH Park, HY Kang, JY Kim, OD Kwon Physical review letters 82 (3), 536, 1999 | 95 | 1999 |
| Effect of V-shaped pit size on the reverse leakage current of InGaN/GaN light-emitting diodes J Kim, J Kim, Y Tak, S Chae, JY Kim, Y Park IEEE electron device letters 34 (11), 1409-1411, 2013 | 67 | 2013 |
| Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate JY Kim, Y Tak, J Kim, HG Hong, S Chae, JW Lee, H Choi, Y Park, ... Gallium Nitride Materials and Devices Vii 8262, 200-208, 2012 | 49 | 2012 |
| End-pumped green and blue vertical external cavity surface emitting laser devices GB Kim, JY Kim, J Lee, J Yoo, KS Kim, SM Lee, S Cho, SJ Lim, T Kim, ... Applied physics letters 89 (18), 2006 | 43 | 2006 |
| Analysis of forward tunneling current in InGaN/GaN multiple quantum well light-emitting diodes grown on Si (111) substrate J Kim, Y Tak, J Kim, S Chae, JY Kim, Y Park Journal of Applied Physics 114 (1), 2013 | 41 | 2013 |
| Investigation of reverse leakage characteristics of InGaN/GaN light-emitting diodes on silicon J Kim, JY Kim, Y Tak, J Kim, HG Hong, M Yang, S Chae, J Park, Y Park, ... IEEE electron device letters 33 (12), 1741-1743, 2012 | 39 | 2012 |
| Fabrication of photonic quantum ring laser using chemically assisted ion beam etching JY Kim, KS Kwak, JS Kim, B Kang, OD Kwon Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001 | 37 | 2001 |
| 920-nm vertical-external-cavity surface-emitting lasers with a slope efficiency of 58% at room temperature KS Kim, J Yoo, G Kim, S Lee, S Cho, J Kim, T Kim, Y Park IEEE Photonics Technology Letters 19 (20), 1655-1657, 2007 | 32 | 2007 |
| Efficient blue lasers based on gain structure optimizing of vertical-external-cavity surface-emitting laser with second harmonic generation JY Kim, S Cho, SJ Lim, J Yoo, GB Kim, KS Kim, J Lee, SM Lee, T Kim, ... Journal of Applied Physics 101 (3), 2007 | 32 | 2007 |
| Semiconductor devices and methods of manufacturing the same Y Tak, J Lee, Y Park, JY Kim US Patent 8,952,419, 2015 | 31 | 2015 |
| High efficiency second harmonic generation vertical external cavity surface emitting laser JY Kim US Patent 7,613,215, 2009 | 31 | 2009 |
| 9.1-W high-efficient continuous-wave end-pumped vertical-external-cavity surface-emitting semiconductor laser JH Lee, JY Kim, SM Lee, JR Yoo, KS Kim, SH Cho, SJ Lim, GB Kim, ... IEEE photonics technology letters 18 (20), 2117-2119, 2006 | 29 | 2006 |
| Light Emitting Devices Using Connection Structures And Methods Of Manufacturing The Same Y Tak, Y Park, S Chae, B Min, JY Kim, H Hong, J Lee, H Jeong US Patent App. 13/109,263, 2011 | 28 | 2011 |
| Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50% JW Lee, Y Tak, JY Kim, HG Hong, S Chae, B Min, H Jeong, J Yoo, JR Kim, ... Journal of Crystal growth 315 (1), 263-266, 2011 | 28 | 2011 |
| Enhancement of pumping efficiency in a vertical-external-cavity surface-emitting laser KS Kim, J Yoo, G Kim, S Lee, S Cho, J Kim, T Kim, Y Park IEEE Photonics Technology Letters 19 (23), 1925-1927, 2007 | 28 | 2007 |
| Light emitting device and method of manufacturing the same J Lee, B Min, JY Kim, Y Tak, H Jeong US Patent 8,525,201, 2013 | 24 | 2013 |
| Light emitting diode having a wire grid polarizer JY Kim, T Kim, KK Kim US Patent 8,003,992, 2011 | 24 | 2011 |
| Highly efficient green VECSEL with intra-cavity diamond heat spreader JY Kim, S Cho, SM Lee, GB Kim, J Lee, J Yoo, KS Kim, T Kim, Y Park Electronics Letters 43 (2), 105-107, 2007 | 23 | 2007 |
| Vertical light emitting device B Min, Y Park, S Chae, JY Kim, H Hong, Y Tak US Patent 8,564,009, 2013 | 21 | 2013 |
