Loading...
The system can't perform the operation now. Try again later.
Citations per year
Duplicate citations
The following articles are merged in Scholar. Their
combined citations
are counted only for the first article.
Merged citations
This "Cited by" count includes citations to the following articles in Scholar. The ones marked
*
may be different from the article in the profile.
Add co-authors
Co-authors
Follow
New articles by this author
New citations to this author
New articles related to this author's research
Email address for updates
Done
My profile
My library
Metrics
Alerts
Settings
Sign in
Sign in
Get my own profile
Cited by
All
Since 2019
Citations
7
7
h-index
2
2
i10-index
0
0
0
4
2
2022
2023
2024
2
4
1
Co-authors
Mohammad Fallahnejad
Assistant Professor of Electronic Engineering,Central Tehran Branch, Islamic Azad University
Verified email at iauctb.ac.ir
mahdi vadizadeh
Assistant professor at IAU, Abhar branch
Verified email at abhariau.ac.ir
Amir Amini
Associate Professor of Electronic Engineering,West Tehran Branch, Islamic Azad University
Verified email at wtiau.ac.ir
Follow
Amir Khodabakhsh
Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran
Verified email at wtiau.ac.ir
Semiconductor Device Physics
CMOS Circuit Design
Low Power Design
Articles
Cited by
Co-authors
Title
Sort
Sort by citations
Sort by year
Sort by title
Cited by
Cited by
Year
High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si
0.5
Ge
0.5
and asymmetric spacers with outstanding analog/RF parameters
M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh
Applied Physics A 128 (1), 47
, 2022
5
2022
Low-noise Si/Si
0.5
Ge
0.5
SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications
M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh
Applied Physics A 129 (5), 336
, 2023
2
2023
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
A Khodabakhsh, M Fallahnejad, M Vadizadeh
Microelectronics Reliability 152, 115278
, 2024
2024
Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications
A Khodabakhsh, A Amini, M Fallahnejad
IEEE Transactions on Nanotechnology
, 2023
2023
The system can't perform the operation now. Try again later.
Articles 1–4
Show more
Privacy
Terms
Help
About Scholar
Search help