Follow
Amir Khodabakhsh
Amir Khodabakhsh
Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran, Iran
Verified email at wtiau.ac.ir
Title
Cited by
Cited by
Year
High-speed SOI junctionless transistor based on hybrid heterostructure of Si/Si0.5Ge0.5 and asymmetric spacers with outstanding analog/RF parameters
M Fallahnejad, A Amini, A Khodabakhsh, M Vadizadeh
Applied Physics A 128 (1), 47, 2022
52022
Low-noise Si/Si0.5Ge0.5 SOI junctionless TeraFET for designing sub-0.5 dB ultra-broadband LNA in 6G applications
M Fallahnejad, A Khodabakhsh, A Amini, M Vadizadeh
Applied Physics A 129 (5), 336, 2023
22023
A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance
A Khodabakhsh, M Fallahnejad, M Vadizadeh
Microelectronics Reliability 152, 115278, 2024
2024
Highly Linear and Low Noise Shell Doped GaN Junctionless Nanotube TeraFET for the Design of Ultra-Wideband LNA in 6G Communications
A Khodabakhsh, A Amini, M Fallahnejad
IEEE Transactions on Nanotechnology, 2023
2023
The system can't perform the operation now. Try again later.
Articles 1–4