| Demonstration of ultra-small (< 10 μm) 632 nm red InGaN micro-LEDs with useful on-wafer external quantum efficiency (> 0.2%) for mini-displays SS Pasayat, C Gupta, MS Wong, R Ley, MJ Gordon, SP DenBaars, ... Applied Physics Express 14 (1), 011004, 2020 | 122 | 2020 |
| High linearity and high gain performance of N-polar GaN MIS-HEMT at 30 GHz P Shrestha, M Guidry, B Romanczyk, N Hatui, C Wurm, A Krishna, ... IEEE Electron Device Letters 41 (5), 681-684, 2020 | 65 | 2020 |
| Color-tunable< 10 μm square InGaN micro-LEDs on compliant GaN-on-porous-GaN pseudo-substrates SS Pasayat, R Ley, C Gupta, MS Wong, C Lynsky, Y Wang, MJ Gordon, ... Applied Physics Letters 117 (6), 2020 | 52 | 2020 |
| Growth of strain-relaxed InGaN on micrometer-sized patterned compliant GaN pseudo-substrates SS Pasayat, C Gupta, MS Wong, Y Wang, S Nakamura, SP Denbaars, ... Applied Physics Letters 116 (11), 2020 | 51 | 2020 |
| Record-low thermal boundary resistance between diamond and GaN-on-SiC for enabling radiofrequency device cooling M Malakoutian, DE Field, NJ Hines, S Pasayat, S Graham, M Kuball, ... ACS Applied Materials & Interfaces 13 (50), 60553-60560, 2021 | 48 | 2021 |
| Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaN SS Pasayat, C Gupta, D Acker-James, D Cohen, SP DenBaars, ... Semiconductor Science and Technology 34 (11), 2019 | 46 | 2019 |
| Compliant micron-sized patterned InGaN pseudo-substrates utilizing porous GaN SS Pasayat, C Gupta, Y Wang, SP DenBaars, S Nakamura, S Keller, ... Materials 13 (1), 213, 2020 | 30 | 2020 |
| First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE SS Pasayat, E Ahmadi, B Romanczyk, O Koksaldi, A Agarwal, M Guidry, ... Semiconductor Science and Technology 34 (4), 045009, 2019 | 22 | 2019 |
| Method of growing elastically relaxed crack-free AlGaN on GaN as substrates for ultra-wide bandgap devices using porous GaN SS Pasayat, N Hatui, W Li, C Gupta, S Nakamura, SP Denbaars, S Keller, ... Applied Physics Letters 117 (6), 2020 | 20 | 2020 |
| First demonstration of improvement in hole conductivity in c-plane III-Nitrides through application of uniaxial strain C Gupta, Y Tsukada, B Romanczyk, SS Pasayat, DA James, E Ahmadi, ... Japanese Journal of Applied Physics 58 (3), 030908, 2019 | 17 | 2019 |
| Vertical GaN and Vertical Ga2O3 Power Transistors: Status and Challenges C Gupta, SS Pasayat physica status solidi (a) 219 (7), 2100659, 2022 | 14 | 2022 |
| Patterned III‐Nitrides on Porous GaN: Extending Elastic Relaxation from the Nano‐to the Micrometer Scale S Keller, SS Pasayat, C Gupta, SP DenBaars, S Nakamura, UK Mishra physica status solidi (RRL)–Rapid Research Letters 15 (11), 2100234, 2021 | 13 | 2021 |
| Demonstration of device-quality 60% relaxed In0. 2Ga0. 8N on porous GaN pseudo-substrates grown by PAMBE C Wurm, H Collins, N Hatui, W Li, S Pasayat, R Hamwey, K Sun, I Sayed, ... Journal of Applied Physics 131 (1), 2022 | 12 | 2022 |
| First experimental demonstration and analysis of electrical transport characteristics of a GaN-based HEMT with a relaxed InGaN channel W Li, S Pasayat, M Guidry, B Romanczyk, X Zheng, C Gupta, N Hatui, ... Semiconductor Science and Technology 35 (7), 075007, 2020 | 11 | 2020 |
| A novel concept using derivative superposition at the device-level to reduce linearity sensitivity to bias in N-polar GaN MISHEMT P Shrestha, M Guidry, B Romanczyk, RR Karnaty, N Hatui, C Wurm, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 7 | 2020 |
| Reverse breakdown studies of GaN MOSCAPs and their implications in vertical GaN power devices C Gupta, SH Chan, SS Pasayat, S Keller, UK Mishra Journal of Applied Physics 125 (12), 2019 | 6 | 2019 |
| Demonstration of ultra-small (< 10 SS Pasayat, C Gupta, MS Wong, R Ley, MJ Gordon, SP DenBaars Appl. Phys. Exp 14 (1), 2020 | 5 | 2020 |
| Study of pore geometry and dislocations in porous GaN based pseudo-substrates using TEM SS Pasayat, F Wu, C Gupta, SP DenBaars, S Nakamura, S Keller, ... IEEE Journal of Quantum Electronics 58 (4), 1-7, 2022 | 4 | 2022 |
| Diamond integration on GaN for channel temperature reduction M Malakoutian, RL Xu, C Ren, S Pasayat, I Sayed, E Pop, S Chowdhury 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 4 | 2021 |
| Metal organic vapor phase epitaxy of thick N-polar InGaN films N Hatui, A Krishna, SS Pasayat, S Keller, UK Mishra Electronics 10 (10), 1182, 2021 | 4 | 2021 |
Stacia KellerUniversity of California Santa BarbaraVerified email at ece.ucsb.edu
