| A monolayer leaky integrate‐and‐fire neuron for 2D memristive neuromorphic networks S Hao, X Ji, S Zhong, KY Pang, KG Lim, TC Chong, R Zhao Advanced Electronic Materials 6 (4), 1901335, 2020 | 60 | 2020 |
| Biodegradable and flexible resistive memory for transient electronics X Ji, L Song, S Zhong, Y Jiang, KG Lim, C Wang, R Zhao The Journal of Physical Chemistry C 122 (29), 16909-16915, 2018 | 60 | 2018 |
| Memristive devices with highly repeatable analog states boosted by graphene quantum dots C Wang, W He, Y Tong, Y Zhang, K Huang, L Song, S Zhong, ... Small 13 (20), 1603435, 2017 | 51 | 2017 |
| Monolayer MoS2/WO3 Heterostructures with Sulfur Anion Reservoirs as Electronic Synapses for Neuromorphic Computing S Hao, X Ji, F Liu, S Zhong, KY Pang, KG Lim, TC Chong, R Zhao ACS Applied Nano Materials 4 (2), 1766-1775, 2021 | 35 | 2021 |
| Super nonlinear electrodeposition–diffusion-controlled thin-film selector X Ji, L Song, W He, K Huang, Z Yan, S Zhong, Y Zhang, R Zhao ACS applied materials & interfaces 10 (12), 10165-10172, 2018 | 27 | 2018 |
| Emulating dynamic synaptic plasticity over broad timescales with memristive device Y Zhang, S Zhong, L Song, X Ji, R Zhao Applied Physics Letters 113 (20), 2018 | 25 | 2018 |
| Enabling transient electronics with degradation on demand via light-responsive encapsulation of a hydrogel–oxide bilayer S Zhong, X Ji, L Song, Y Zhang, R Zhao ACS applied materials & interfaces 10 (42), 36171-36176, 2018 | 20 | 2018 |
| Electrode dependence of resistive switching in Au/Ni–Au nanoparticle devices S Zhong, S Duan, Y Cui RSC advances 4 (77), 40924-40929, 2014 | 16 | 2014 |
| Activating silent synapses in sulfurized indium selenide for neuromorphic computing S Hao, S Zhong, X Ji, KY Pang, N Wang, H Li, Y Jiang, KG Lim, TC Chong, ... ACS Applied Materials & Interfaces 13 (50), 60209-60215, 2021 | 13 | 2021 |
| Spike‐Based Spatiotemporal Processing Enabled by Oscillation Neuron for Energy‐Efficient Artificial Sensory Systems S Zhong, Y Zhang, H Zheng, F Yu, R Zhao Advanced Intelligent Systems 4 (9), 2200076, 2022 | 10 | 2022 |
| Metal and annealing atmospheres dependence of resistive switching in metal/Nb0. 7wt%-SrTiO3 interfaces S Zhong, Y Cui Current applied physics 13 (5), 913-918, 2013 | 7 | 2013 |
| Artificial Working Memory Constructed by Planar 2D Channel Memristors Enabling Brain‐Inspired Hierarchical Memory Systems X Ji, S Hao, KG Lim, S Zhong, R Zhao Advanced Intelligent Systems 4 (3), 2100119, 2022 | 6 | 2022 |
| Phototriggerable Transient Electronics via Fullerene-Mediated Degradation of Polymer: Fullerene Encapsulation Layer S Zhong, HC Wong, HY Low, R Zhao ACS Applied Materials & Interfaces 13 (1), 904-911, 2020 | 6 | 2020 |
| Study of Resistive Switching and Biodegradability in Ultralow Power Memory Device Based on All‐Inorganic Ag/AgBi2I7/ITO Structure X Yang, S Zhong, K Wang, Z Ye, R Zhang, H Wei, L Zhao, W Li, Y Chen, ... Advanced Materials Interfaces 9 (17), 2200237, 2022 | 4 | 2022 |
| CMOS Compatible Transient Resistive Memory with Prolonged Lifetime S Zhong, X Ji, Y Zhou, Y Zhang, A Ye, R Zhao Advanced Materials Technologies 4 (9), 1900217, 2019 | 4 | 2019 |
| 2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6 J Zhou, A Chen, Y Zhang, D Pu, B Qiao, J Hu, H Li, S Zhong, R Zhao, ... Advanced Materials 35 (38), 2302419, 2023 | 2 | 2023 |
| A biodegradable artificial synapse implemented by foundry-compatible materials S Zhong, X Ji, S Hao, F Liu, R Zhao Applied Physics Letters 117 (19), 2020 | 2 | 2020 |
| 2D Ferroionics: Conductive Switching Mechanisms and Transition Boundaries in Van der Waals Layered Material CuInP2S6 (Adv. Mater. 38/2023) J Zhou, A Chen, Y Zhang, D Pu, B Qiao, J Hu, H Li, S Zhong, R Zhao, ... Advanced Materials 35 (38), 2370267, 2023 | 1 | 2023 |
| Adaptive Synaptic Scaling in Spiking Networks for Continual Learning and Enhanced Robustness M Xu, F Liu, Y Hu, H Li, Y Wei, S Zhong, J Pei, L Deng IEEE Transactions on Neural Networks and Learning Systems, 2024 | | 2024 |
| Advances of embedded resistive random access memory in industrial manufacturing and its potential applications Z Wang, Y Song, G Zhang, Q Luo, K Xu, D Gao, B Yu, D Loke, S Zhong, ... International Journal of Extreme Manufacturing 6 (3), 032006, 2024 | | 2024 |
