Ilan Shalish

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Venkatesh NarayanamurtiProfessor of Technology and Public Policy, Harvard UniversityVerified email at seas.harvard.edu
Joseph SalzmanProfessor of Electrical EngineeringVerified email at technion.ac.il
Federico CapassoHarvard UniversityVerified email at seas.harvard.edu
Jiming BaoProfessor of Electrical and Computer Engineering and TcSUH, University of HoustonVerified email at uh.edu
Leeor KronikWeizmann Institute of ScienceVerified email at weizmann.ac.il
Wei YiHRL Laboratories, LLCVerified email at hrl.com
Moshe EizenbergTechnion and Guangdong Technion- Israel Institute of TechnologyVerified email at technion.ac.il
Mariano ZimmlerHarvard UniversityVerified email at post.harvard.edu
Rachel S. GoldmanProfessor of Materials Science and Engineering, University of MichiganVerified email at umich.edu
Z. F. RenProfessor of Physics, Boston CollegeVerified email at central.uh.edu
Ramdas Ram-MohanWorcester Polytechnic InstituteVerified email at wpi.edu
Ian AppelbaumUniversity of Maryland, College ParkVerified email at physics.umd.edu
Gilbert Daniel NessimAssociate Professor, Dept. Chemistry / Nanotechnology, Bar IlanVerified email at biu.ac.il
Malachi NokedBar Ilan UniversityVerified email at biu.ac.il
Anat ItzhakPh. D student, Bar-Ilan UniversityVerified email at biu.ac.il
Efrat Shawat Avrahamפוסט דוקטורט באוניברסיטת בר אילןVerified email at biu.ac.il
Gili TaguriHead of the XRD lab, Bar-Ilan Institute for Nanotechnology and Advanced MaterialsVerified email at biu.ac.il
Rahul A ShethMD Anderson Cancer CenterVerified email at mdanderson.org
David C. BellHarvard John A. Paulson School of Engineering and Applied Sciences, Harvard UniversityVerified email at seas.harvard.edu
Edward LikovichHarvard UniversityVerified email at post.harvard.edu

Ilan Shalish

Ben Gurion University

Verified email at bgu.ac.il - Homepage

Semiconductor Material Physics


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Size-dependent surface luminescence in ZnO nanowires I Shalish, H Temkin, V Narayanamurti Physical Review B 69 (24), 245401, 2004	776	2004
Photoinduced oxygen release and persistent photoconductivity in ZnO nanowires J Bao, I Shalish, Z Su, R Gurwitz, F Capasso, X Wang, Z Ren Nanoscale research letters 6, 1-7, 2011	241	2011
Yellow luminescence and related deep levels in unintentionally doped GaN films I Shalish, L Kronik, G Segal, Y Rosenwaks, Y Shapira, U Tisch, J Salzman Physical Review B 59 (15), 9748, 1999	191	1999
Interaction of light with the ZnO surface: Photon induced oxygen “breathing,” oxygen vacancies, persistent photoconductivity, and persistent photovoltage R Gurwitz, R Cohen, I Shalish Journal of Applied Physics 115 (3), 2014	121	2014
Surface states and surface oxide in GaN layers I Shalish, Y Shapira, L Burstein, J Salzman Journal of Applied Physics 89 (1), 390-395, 2001	109	2001
Catalytic hydride vapour phase epitaxy growth of GaN nanowires G Seryogin, I Shalish, W Moberlychan, V Narayanamurti Nanotechnology 16 (10), 2342, 2005	99	2005
Grain-boundary-controlled transport in GaN layers I Shalish, L Kronik, G Segal, Y Shapira, S Zamir, B Meyler, J Salzman Physical Review B 61 (23), 15573, 2000	67	2000
Yellow luminescence and Fermi level pinning in GaN layers I Shalish, L Kronik, G Segal, Y Shapira, M Eizenberg, J Salzman Applied Physics Letters 77 (7), 987-989, 2000	48	2000
Photoinduced charge carriers at surfaces and interfaces of poly [2− methoxy− 5−(2′− e t h y l− h e x y l o x y)− 1, 4− phenylene vinylene] with Au and GaAs J Yang, I Shalish, Y Shapira Physical Review B 64 (3), 035325, 2001	40	2001
Digenite (Cu₉S₅): Layered p-Type Semiconductor Grown by Reactive Annealing of Copper A Itzhak, E Teblum, O Girshevitz, S Okashy, Y Turkulets, L Burlaka, ... Chemistry of Materials 30 (7), 2379-2388, 2018	33	2018
Observations of conduction-band structure of 4 H-and 6 H− SiC I Shalish, IB Altfeder, V Narayanamurti Physical Review B 65 (7), 073104, 2002	33	2002
Thermal stability of Pt Schottky contacts to 4H–SiC I Shalish, CEM De Oliveira, Y Shapira, L Burstein, M Eizenberg Journal of Applied Physics 88 (10), 5724-5728, 2000	33	2000
Size-dependent impurity activation energy in GaN nanowires J Yoon, AM Girgis, I Shalish, LR Ram-Mohan, V Narayanamurti Applied Physics Letters 94 (14), 2009	30	2009
Electroluminescence from single nanowires by tunnel injection: an experimental study MA Zimmler, J Bao, I Shalish, W Yi, J Yoon, V Narayanamurti, F Capasso Nanotechnology 18 (23), 235205, 2007	30	2007
Bandgap and band discontinuity in wurtzite/zincblende GaAs homomaterial heterostructure R Gurwitz, A Tavor, L Karpeles, I Shalish, W Yi, G Seryogin, ... Applied Physics Letters 100 (19), 2012	29	2012
Tungsten‐disulfide/polyaniline high frequency supercapacitors A De Adhikari, N Shauloff, Y Turkulets, I Shalish, R Jelinek Advanced Electronic Materials 7 (6), 2100025, 2021	28	2021
Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire I Shalish, G Seryogin, W Yi, JM Bao, MA Zimmler, E Likovich, DC Bell, ... Nanoscale research letters 4, 532-537, 2009	24	2009
A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection MA Zimmler, J Bao, I Shalish, W Yi, V Narayanamurti, F Capasso Nanotechnology 18 (39), 395201, 2007	23	2007
Gold metallization for aluminum nitride I Shalish, SM Gasser, E Kolawa, MA Nicolet, RP Ruiz Thin Solid Films 289 (1-2), 166-169, 1996	23	1996
Method for electrical characterization of nanowires R Gurwitz, I Shalish Nanotechnology 22 (43), 435705, 2011	22	2011

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