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Clarence Chan
Clarence Chan
Verified email at illinois.edu
Title
Cited by
Cited by
Year
Near-and mid-infrared photoluminescence in Ho3+ doped and Ho3+–Yb3+ codoped low-phonon-energy germanotellurite glasses
B Zhou, L Tao, CYY Chan, W Jin, YH Tsang, EYB Pun
Journal of luminescence 137, 132-137, 2013
402013
CMOS-Compatible Catalyst for MacEtch: Titanium nitride-assisted chemical etching in vapor phase for high Aspect ratio Silicon nanostructures
JD Kim, M Kim, C Chan, N Draeger, JJ Coleman, X Li
ACS applied materials & interfaces 11 (30), 27371-27377, 2019
352019
Wet etch, dry etch, and MacEtch of β-Ga2O3: A review of characteristics and mechanism
HC Huang, Z Ren, C Chan, X Li
Journal of Materials Research, 1-15, 2021
312021
Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching
JA Michaels, L Janavicius, X Wu, C Chan, HC Huang, S Namiki, M Kim, ...
Advanced Functional Materials 31 (32), 2103298, 2021
282021
Homoepitaxial GaN micropillar array by plasma-free photo-enhanced metal-assisted chemical etching
CY Chan, S Namiki, JK Hite, MA Mastro, SB Qadri, X Li
Journal of Vacuum Science & Technology A 39 (5), 2021
142021
Intense near-infrared emission of 1.23 μm in erbium-doped low-phonon-energy fluorotellurite glass
B Zhou, L Tao, CYY Chan, YH Tsang, W Jin, EYB Pun
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 111, 49-53, 2013
142013
Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing
LL Janavicius, JA Michaels, C Chan, DJ Sievers, X Li
Applied Physics Reviews 10 (1), 2023
112023
Temperature dependent characteristics of β-Ga2O3 FinFETs by MacEtch
Z Ren, HC Huang, H Lee, C Chan, HC Roberts, X Wu, A Waseem, ...
Applied Physics Letters 123 (4), 2023
62023
Plasma‐Damage Free Efficiency Scaling of Micro‐LEDs by Metal‐Assisted Chemical Etching
CY Chan, HC Roberts, Y Xiao, PJ Froeter, DJ Sievers, Z Mi, X Li
Advanced Optical Materials, 2302957, 2024
12024
Demystifying metal-assisted chemical etching of GaN and related heterojunctions
CY Chan, JP Menzel, Y Dong, Z Long, A Waseem, X Wu, Y Xiao, J Xie, ...
Applied Physics Reviews 11 (2), 2024
2024
Demystifying metal-assisted chemical etching of III-N materials and multi-heterojunctions: fundamentals to optoelectronic applications
CYY Chan
University of Illinois at Urbana-Champaign, 2023
2023
Light emitting diode (led) structures for a microled device, and method for producing an array of led structures
X Li, C Chan
US Patent App. 18/124,132, 2023
2023
-Ga2O3 FinFETs by MacEtch: temperature dependent I-V characteristics
Z Ren, HC Huang, H Lee, C Chan, HC Roberts, X Wu, A Wassem, W Zhu, ...
2023 Device Research Conference (DRC), 1-2, 2023
2023
Publisher's Note:“Programmable vapor-phase metal-assisted chemical etching for versatile high-aspect ratio silicon nanomanufacturing”[Appl. Phys. Rev. 10, 011409 (2023)]
LL Janavicius, JA Michaels, C Chan, DJ Sievers, X Li
Applied Physics Reviews 10 (2), 029901, 2023
2023
Journal Highlights
HC Huang, Z Ren, C Chan, X Li
MRS BULLETIN 47, 2022
2022
Plasma-free Anisotropic Etching of GaN
CY Chan, S Namiki, JK Hite, X Li
CLEO: Science and Innovations, STh4J. 5, 2021
2021
(Invited) SiC and GaN High Aspect Ratio Nanostructures By Plasma-Free Photo-Assisted Inverse-Macetch
J Michaels, C Chan, X Li
Electrochemical Society Meeting Abstracts prime2020, 1811-1811, 2020
2020
Utilization of Graphene in Self Rolled-up Membrane Capicitors
C Chan
2017
Plasma-free Anisotropic Metal-Assisted Chemical Etching and MOCVD growth of Wide and Ultrawide Bandgap Compound Semiconductors
Z Ren, A Waseem, HC Roberts, X Wu, G Latham, S Park, C Chan, X Li
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Articles 1–19