| Improvement of electrical performance in junctionless nanowire TFET using hetero-gate-dielectric M Rahimian, M Fathipour Materials Science in Semiconductor Processing 63, 142-152, 2017 | 59 | 2017 |
| High-voltage and RF performance of SOI MESFET using controlled electric field distribution A Aminbeidokhti, AA Orouji, M Rahimian IEEE transactions on electron devices 59 (10), 2842-2845, 2012 | 38 | 2012 |
| Leakage current reduction in nanoscale fully-depleted SOI MOSFETs with modified current mechanism AA Orouji, M Rahimian Current applied physics 12 (5), 1366-1371, 2012 | 34 | 2012 |
| Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation M Rahimian, AA Orouji Superlattices and Microstructures 50 (6), 667-679, 2011 | 24 | 2011 |
| High-performance SOI MESFET with modified depletion region using a triple recessed gate for RF applications Z Ramezani, AA Orouji, M Rahimian Materials Science in Semiconductor Processing 30, 75-84, 2015 | 23 | 2015 |
| A novel nanoscale MOSFET with modified buried layer for improving of AC performance and self-heating effect M Rahimian, AA Orouji Materials science in semiconductor processing 15 (4), 445-454, 2012 | 21 | 2012 |
| Junctionless nanowire TFET with built-in NPN bipolar action: Physics and operational principle M Rahimian, M Fathipour Journal of Applied Physics 120 (22), 2016 | 19 | 2016 |
| A novel deep submicron SiGe-on-insulator (SGOI) MOSFET with modified channel band energy for electrical performance improvement M Rahimian, AA Orouji, A Aminbeidokhti Current applied physics 13 (4), 779-784, 2013 | 19 | 2013 |
| Asymmetric junctionless nanowire TFET with built-in source pocket emphasizing on energy band modification M Rahimian, M Fathipour Journal of Computational Electronics 15 (4), 1297-1307, 2016 | 15 | 2016 |
| Dual material insulator SOI-LDMOSFET: A novel device for self-heating effect improvement AA Orouji, M Rahimian Physica E: Low-dimensional Systems and Nanostructures 44 (1), 333-338, 2011 | 11 | 2011 |
| Investigation of the electrical and thermal performance of SOI MOSFETs with modified channel engineering M Rahimian, AA Orouji Materials science in semiconductor processing 16 (5), 1248-1256, 2013 | 10 | 2013 |
| A novel GaAs MESFET with multi-recessed drift region and partly p-type doped space layer AA Orouji, A Aminbeidokhti, M Rahimian 2011 International Conference on Electronic Devices, Systems and …, 2011 | 7 | 2011 |
| 32 nm high current performance double gate MOSFET for low power CMOS circuits M Rahimian, AA Orouji, A Aminbeidokhti International Journal of Electronics 102 (3), 347-361, 2015 | 3 | 2015 |
| Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension M Rahimian Journal of Optoelectronical Nanostructures 8 (1), 13-31, 2023 | 2 | 2023 |
| A novel vertical stepped doping poly-Si TFT (VSD-TFT) for leakage current improvement AA Orouji, R Esmailnezhad, M Rahimian Superlattices and Microstructures 63, 18-28, 2013 | 2 | 2013 |
| Stopped depletion region extension in an AlGaN/GaN-HEMT: A new technique for improving high-frequency performance M Asad, M Rahimian Journal of the Korean Physical Society 67, 525-532, 2015 | 1 | 2015 |
| Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction M Rahimian Journal of Optoelectronical Nanostructures 8 (4), 51-62, 2023 | | 2023 |
| A novel N-MOSFET with air gaps in gate insulator for deep submicron applications AA Orouji, M Rahimian, A Aminbeidokhti 2011 International Conference on Electronic Devices, Systems and …, 2011 | | 2011 |
Ali Asghar OroujiProfessor, Semnan UniversityVerified email at semnan.ac.ir
