Follow
Ali Shokouhi Shoormasti
Ali Shokouhi Shoormasti
Ph.D Student of Electronics Engineering, Semnan University
Verified email at semnan.ac.ir
Title
Cited by
Cited by
Year
Improvement the breakdown voltage and the ON-resistance in the LDMOSFET: Double buried metal layers structure
A Shokouhi Shoormasti, A Abbasi, AA Orouji
Silicon 13, 2157-2164, 2021
32021
Using energy band engineering to improve heterojunction solar cells efficiency
AS Shoormasti, A Abbasi, AA Orouji
Optik 218, 165243, 2020
32020
Performance improvement of SiGe based silicon-on-insulator transistor using vertically graded channel approach
AS Shoormasti, AA Orouji, MK Anvarifard
Silicon 11 (6), 3021-3030, 2019
12019
The system can't perform the operation now. Try again later.
Articles 1–3