Monolithic integration of GaN nanowire light-emitting diode with field effect transistor M Hartensveld, J Zhang IEEE Electron Device Letters 40 (3), 427-430, 2019 | 44 | 2019 |
Effect of KOH passivation for top-down fabricated InGaN nanowire light emitting diodes M Hartensveld, G Ouin, C Liu, J Zhang Journal of Applied Physics 126 (18), 2019 | 43 | 2019 |
Proposal and realization of vertical GaN nanowire static induction transistor M Hartensveld, C Liu, J Zhang IEEE Electron Device Letters 40 (2), 259-262, 2018 | 9 | 2018 |
AlGaN nanowires with inverse taper for flexible DUV emitters M Hartensveld, B Melanson, C Liu, J Zhang Journal of Physics: Photonics 3 (2), 024016, 2021 | 7 | 2021 |
InGaN color tunable full color passive matrix M Hartensveld IEEE Electron Device Letters 44 (3), 460-463, 2023 | 6 | 2023 |
Proposal and realization of V-groove color tunable µLEDs M Hartensveld Optics Express 30 (15), 27314-27321, 2022 | 6 | 2022 |
Realization of electrically driven AlGaN micropillar array deep-ultraviolet light emitting diodes at 286 nm B Melanson, M Hartensveld, C Liu, J Zhang AIP Advances 11 (9), 2021 | 6 | 2021 |
61‐5: Fully Monolithic GaN µLED Display System M Hartensveld SID Symposium Digest of Technical Papers 52 (1), 880-883, 2021 | 6 | 2021 |
450 nm Gallium Nitride alternating current light-emitting diode M Hartensveld, B Melanson, VT Vangipuram, J Zhang IEEE Photonics Journal 12 (6), 1-6, 2020 | 6 | 2020 |
Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires M Hartensveld Rochester Institute of Technology, 2018 | 4 | 2018 |
Demonstration of Ultraviolet μLED Array with Novel Electrical Contact Etch Mask M Seitz, M Hartensveld, B Melanson, J Boisvere, J Zhang IEEE Journal of Quantum Electronics, 2023 | 2 | 2023 |
Demonstration of 372 nm micropillar light emitting diodes using novel Ni/Au/Ni dry etch mask and ohmic contact M Seitz, M Hartensveld, B Melanson, J Zhang 2022 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2022 | 2 | 2022 |
Demonstration of flexible DUV light emitting diodes through formation of nanowires with inverse-taper B Melanson, M Hartensveld, C Liu, J Zhang 2021 Conference on Lasers and Electro-Optics (CLEO), 1-2, 2021 | 2 | 2021 |
Ultraviolet Electrostatic Field Effect Light-Emitting Diode JZ M Hartenveld, B Melanson IEEE Photonics Journal 12 (5), 8200808, 2020 | 2* | 2020 |
Analysis on light extraction property of AlGaN-based flip-chip ultraviolet light-emitting diodes by the use of self-assembled SiO2 microsphere array C Liu, B Melanson, YK Ooi, M Hartensveld, J Zhang Gallium Nitride Materials and Devices XIV 10918, 39-44, 2019 | 2 | 2019 |
Integration of 3D printed lens with InGaN light-emitting diodes with enhanced light extraction efficiency YK Ooi, C Ugras, C Liu, M Hartensveld, S Gandhi, D Cormier, J Zhang Advanced Fabrication Technologies for Micro/Nano Optics and Photonics X …, 2017 | 2 | 2017 |
Monolithic color-tunable light emitting diodes and methods thereof MT Hartensveld US Patent App. 17/691,934, 2022 | 1 | 2022 |
Methods for engineering volumes in leds for higher operating efficiencies and devices thereof MT Hartensveld US Patent App. 17/565,960, 2023 | | 2023 |
P‐163: Late‐News Poster: Demonstration of Color Tunable µLED Passive Matrix M Hartensveld SID Symposium Digest of Technical Papers 54 (1), 1770-1773, 2023 | | 2023 |
Monolithic semiconductor led display systems and methods thereof MT Hartensveld US Patent App. 17/527,264, 2022 | | 2022 |