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Pedro C. Feijoo
Pedro C. Feijoo
Other namesPedro Carlos Feijoo Guerro, P. C. Feijoo
Verified email at upm.es
Title
Cited by
Cited by
Year
Short channel effects in graphene-based field effect transistors targeting radio-frequency applications
PC Feijoo, D Jiménez, X Cartoixà
2D Materials 3 (2), 025036, 2016
362016
Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor
PC Feijoo, F Pasadas, JM Iglesias, MJ Martin, R Rengel, C Li, W Kim, ...
Nanotechnology 28 (48), 485203, 2017
262017
Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties
PC Feijoo, A Del Prado, M Toledano-Luque, E San Andrés, ML Lucía
Journal of Applied Physics 107 (8), 2010
242010
Compact modeling technology for the simulation of integrated circuits based on graphene field‐effect transistors
F Pasadas, PC Feijoo, N Mavredakis, A Pacheco‐Sanchez, FA Chaves, ...
Advanced Materials 34 (48), 2201691, 2022
232022
Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors
PC Feijoo, F Pasadas, JM Iglesias, R Rengel, D Jiménez
IEEE Transactions on Electron Devices 66 (3), 1567-1573, 2019
182019
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
A Pacheco-Sanchez, N Mavredakis, PC Feijoo, W Wei, E Pallecchi, ...
IEEE Transactions on Electron Devices 67 (12), 5790-5796, 2020
172020
Optimization of scandium oxide growth by high pressure sputtering on silicon
PC Feijoo, MA Pampillón, E San Andrés, ML Lucía
Thin Solid Films 526, 81-86, 2012
162012
Contact resistance extraction of graphene FET technologies based on individual device characterization
A Pacheco-Sanchez, PC Feijoo, D Jiménez
Solid-State Electronics 172, 107882, 2020
142020
Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering
PC Feijoo, MÁ Pampillón, ES Andrés
Journal of Vacuum Science & Technology B 31 (1), 2013
142013
Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
PC Feijoo, T Kauerauf, M Toledano-Luque, M Togo, E San Andrés, ...
IEEE Transactions on Device and Materials Reliability 12 (1), 166-170, 2012
142012
Electrical characterization of gadolinium oxide deposited by high pressure sputtering with in situ plasma oxidation
MÁ Pampillón, PC Feijoo, E San Andrés
Microelectronic engineering 109, 236-239, 2013
132013
Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon
MÁ Pampillón, PC Feijoo, E San Andrés, ML Lucía
Journal of Vacuum Science & Technology B 31 (1), 2013
132013
Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering
MA Pampillon, PC Feijoo, E San Andres, ML Lucía, A Del Prado, ...
Microelectronic engineering 88 (9), 2991-2996, 2011
132011
Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
MA Pampillón, PC Feijoo, E San Andrés, M Toledano-Luque, A Del Prado, ...
Microelectronic engineering 88 (7), 1357-1360, 2011
132011
Does carrier velocity saturation help to enhance f max in graphene field-effect transistors?
PC Feijoo, F Pasadas, M Bonmann, M Asad, X Yang, A Generalov, ...
Nanoscale advances 2 (9), 4179-4186, 2020
112020
Unveiling the impact of the bias-dependent charge neutrality point on graphene based multi-transistor applications
F Pasadas, A Medina-Rull, PC Feijoo, A Pacheco-Sanchez, EG Marin, ...
Nano Express 2 (3), 036001, 2021
92021
2D pn junctions driven out-of-equilibrium
FA Chaves, PC Feijoo, D Jiménez
Nanoscale advances 2 (8), 3252-3262, 2020
92020
Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering
PC Feijoo, MA Pampillón, E San Andrés, JLG Fierro
Thin Solid Films 593, 62-66, 2015
92015
High pressure sputtering as a viable technique for future high permittivity dielectric on III–V integration: GdOx on InP demonstration
MÁ Pampillón, C Canadilla, PC Feijoo, E San Andrés, Á del Prado
Journal of Vacuum Science & Technology B 31 (1), 2013
92013
Gadolinium scandate by high-pressure sputtering for future generations of high-κ dielectrics
PC Feijoo, MA Pampillón, E San Andrés, JLG Fierro
Semiconductor science and technology 28 (8), 085004, 2013
82013
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