| Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers YK Kuo, JY Chang, MC Tsai, SH Yen Applied physics letters 95 (1), 2009 | 295 | 2009 |
| Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer YK Kuo, JY Chang, MC Tsai Optics letters 35 (19), 3285-3287, 2010 | 171 | 2010 |
| Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ... Nano letters 18 (11), 6906-6914, 2018 | 155 | 2018 |
| Effect of p-type last barrier on efficiency droop of blue InGaN light-emitting diodes YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen IEEE Journal of Quantum Electronics 46 (8), 1214-1220, 2010 | 125 | 2010 |
| Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well CT Liao, MC Tsai, BT Liou, SH Yen, YK Kuo Journal of Applied Physics 108 (6), 2010 | 85 | 2010 |
| Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer YK Kuo, MC Tsai, SH Yen Optics Communications 282 (21), 4252-4255, 2009 | 85 | 2009 |
| Effect of n-type AlGaN layer on carrier transportation and efficiency droop of blue InGaN light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo IEEE photonics technology letters 21 (14), 975-977, 2009 | 84 | 2009 |
| Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers YK Kuo, TH Wang, JY Chang, MC Tsai Applied physics letters 99 (9), 2011 | 76 | 2011 |
| Advantages of blue InGaN light-emitting diodes with AlGaN barriers JY Chang, MC Tsai, YK Kuo Optics letters 35 (9), 1368-1370, 2010 | 75 | 2010 |
| Deep-ultraviolet light-emitting diodes with gradually increased barrier thicknesses from n-layers to p-layers MC Tsai, SH Yen, YK Kuo Applied Physics Letters 98 (11), 2011 | 49 | 2011 |
| Investigation of optical performance of InGaN MQW LED with thin last barrier SH Yen, ML Tsai, MC Tsai, SJ Chang, YK Kuo IEEE Photonics Technology Letters 22 (24), 1787-1789, 2010 | 41 | 2010 |
| Numerical study of blue InGaN light-emitting diodes with varied barrier thicknesses MC Tsai, SH Yen, YC Lu, YK Kuo IEEE Photonics Technology Letters 23 (2), 76-78, 2010 | 39 | 2010 |
| Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier YK Kuo, YH Shih, MC Tsai, JY Chang IEEE Photonics Technology Letters 23 (21), 1630-1632, 2011 | 36 | 2011 |
| Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes YK Kuo, SH Horng, SH Yen, MC Tsai, MF Huang Applied Physics A 98, 509-515, 2010 | 31 | 2010 |
| Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers YK Kuo, MC Tsai, SH Yen, TC Hsu, YJ Shen IEEE Journal of Selected Topics in Quantum Electronics 15 (4), 1115-1121, 2009 | 31 | 2009 |
| Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes YK Kuo, YH Chen, JY Chang, MC Tsai Applied Physics Letters 100 (4), 2012 | 30 | 2012 |
| Theoretical investigation of Auger recombination on internal quantum efficiency of blue light-emitting diodes SH Yen, MC Tsai, ML Tsai, YJ Shen, TC Hsu, YK Kuo Applied Physics A 97, 705-708, 2009 | 22 | 2009 |
| Carrier Transportation and Internal Quantum Efficiency of Blue InGaN Light-Emitting Diodes With -Doped Barriers MC Tsai, SH Yen, YK Kuo IEEE Photonics Technology Letters 22 (6), 374-376, 2010 | 20 | 2010 |
| Low resistivity GaN-based polarization-induced tunnel junctions MC Tsai, B Leung, TC Hsu, YK Kuo Journal of lightwave technology 31 (22), 3575-3581, 2013 | 19 | 2013 |
| Investigation of blue InGaN light-emitting diodes with step-like quantum well MC Tsai, SH Yen, YK Kuo Applied Physics A 104, 621-626, 2011 | 16 | 2011 |
