| Radiation effects in MOS oxides JR Schwank, MR Shaneyfelt, DM Fleetwood, JA Felix, PE Dodd, P Paillet, ... IEEE Transactions on Nuclear Science 55 (4), 1833-1853, 2008 | 985 | 2008 |
| Effects of oxide traps, interface traps, and ‘‘border traps’’on metal‐oxide‐semiconductor devices DM Fleetwood, PS Winokur, RA Reber Jr, TL Meisenheimer, JR Schwank, ... Journal of Applied Physics 73 (10), 5058-5074, 1993 | 607 | 1993 |
| 'Border traps' in MOS devices DM Fleetwood IEEE transactions on nuclear science 39 (2), 269-271, 1992 | 479 | 1992 |
| Total ionizing dose effects in MOS and low-dose-rate-sensitive linear-bipolar devices DM Fleetwood IEEE Transactions on Nuclear Science 60 (3), 1706-1730, 2013 | 388 | 2013 |
| Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates DM Fleetwood, SL Kosier, RN Nowlin, RD Schrimpf, RA Reber, M DeLaus, ... IEEE Transactions on Nuclear Science 41 (6), 1871-1883, 1994 | 372 | 1994 |
| Physical model for enhanced interface-trap formation at low dose rates SN Rashkeev, CR Cirba, DM Fleetwood, RD Schrimpf, SC Witczak, ... IEEE Transactions on Nuclear Science 49 (6), 2650-2655, 2002 | 293 | 2002 |
| 1/f noise and radiation effects in MOS devices DM Fleetwood, TL Meisenheimer, JH Scofield IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994 | 262 | 1994 |
| Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices MR Shaneyfelt, DM Fleetwood, JR Schwank, KL Hughes IEEE transactions on nuclear science 38 (6), 1187-1194, 1991 | 262 | 1991 |
| Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments DM Fleetwood, PS Winokur, JR Schwank IEEE Transactions on Nuclear Science 35 (6), 1497-1505, 1988 | 258 | 1988 |
| Defect generation by hydrogen at the Si-SiO 2 interface SN Rashkeev, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 87 (16), 165506, 2001 | 241 | 2001 |
| Charge separation for bipolar transistors SL Kosier, RD Schrimpf, RN Nowlin, DM Fleetwood, M DeLaus, RL Pease, ... IEEE transactions on nuclear science 40 (6), 1276-1285, 1993 | 235 | 1993 |
| Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous ZY Lu, CJ Nicklaw, DM Fleetwood, RD Schrimpf, ST Pantelides Physical review letters 89 (28), 285505, 2002 | 233 | 2002 |
| An overview of high-temperature electronic device technologies and potential applications PL Dreike, DM Fleetwood, DB King, DC Sprauer, TE Zipperian IEEE Transactions on Components, Packaging, and Manufacturing Technology …, 1994 | 232 | 1994 |
| ELDRS in bipolar linear circuits: A review RL Pease, RD Schrimpf, DM Fleetwood 2008 European Conference on Radiation and Its Effects on Components and …, 2008 | 230 | 2008 |
| Border traps: Issues for MOS radiation response and long-term reliability DM Fleetwood, MR Shaneyfelt, WL Warren, JR Schwank, ... Microelectronics Reliability 35 (3), 403-428, 1995 | 226 | 1995 |
| Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices DM Fleetwood, HD Xiong, ZY Lu, CJ Nicklaw, JA Felix, RD Schrimpf, ... IEEE Transactions on Nuclear Science 49 (6), 2674-2683, 2002 | 207 | 2002 |
| 1/f noise and defects in microelectronic materials and devices DM Fleetwood IEEE Transactions on Nuclear Science 62 (4), 1462-1486, 2015 | 203 | 2015 |
| Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors DM Fleetwood, JH Scofield Physical review letters 64 (5), 579, 1990 | 202 | 1990 |
| Non-volatile memory device based on mobile protons in SiO2 thin films K Vanheusden, WL Warren, RAB Devine, DM Fleetwood, JR Schwank, ... Nature 386 (6625), 587-589, 1997 | 200 | 1997 |
| Evolution of total ionizing dose effects in MOS devices with Moore’s law scaling DM Fleetwood IEEE Transactions on Nuclear Science 65 (8), 1465-1481, 2017 | 198 | 2017 |
Ron SchrimpfProfessor of Electrical Engineering, Vanderbilt UniversityVerified email at vanderbilt.edu
