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Amandeep Singh
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Year
Design and analysis of electrostatic doped Schottky barrier CNTFET based low power SRAM
A Singh, M Khosla, B Raj
AEU-International Journal of Electronics and Communications 80, 67-72, 2017
572017
Design and analysis of a gate-all-around CNTFET-based SRAM cell
G Saiphani Kumar, A Singh, B Raj
Journal of Computational Electronics 17, 138-145, 2018
482018
Design and analysis of dynamically configurable electrostatic doped carbon nanotube tunnel FET
A Singh, M Khosla, B Raj
Microelectronics Journal 85, 17-24, 2019
452019
Comparative analysis of carbon nanotube field effect transistor and nanowire transistor for low power circuit design
A Singh, M Khosla, B Raj
Journal of Nanoelectronics and Optoelectronics 11 (3), 388-393, 2016
392016
Impact of double gate geometry on the performance of carbon nanotube field effect transistor structures for low power digital design
AK Bhardwaj, S Gupta, B Raj, A Singh
Journal of Computational and Theoretical Nanoscience 16 (5-6), 1813-1820, 2019
362019
Analysis of electrostatic doped Schottky barrier carbon nanotube FET for low power applications
A Singh, M Khosla, B Raj
Journal of Materials Science: Materials in Electronics 28, 1762-1768, 2017
302017
Circuit compatible model for electrostatic doped Schottky barrier CNTFET
A Singh, M Khosla, B Raj
Journal of Electronic Materials 45, 5381-5390, 2016
272016
Modeling and simulation of carbon nanotube field effect transistor and its circuit application
A Singh, DK Saini, D Agarwal, S Aggarwal, M Khosla, B Raj
Journal of Semiconductors 37 (7), 074001, 2016
272016
Compact model for ballistic single wall CNTFET under quantum capacitance limit
A Singh, M Khosla, B Raj
Journal of Semiconductors 37 (10), 104001, 2016
242016
Comparative analysis of carbon nanotube field effect transistors
A Singh, M Khosla, B Raj
2015 IEEE 4th Global Conference on Consumer Electronics (GCCE), 552-555, 2015
182015
CNTFET modeling and low power SRAM cell design
A Singh, M Khosla, B Raj
2016 IEEE 5th Global Conference on Consumer Electronics (GCCE), 1-4, 2016
112016
Design and analysis of negative capacitance based dual material dopingless tunnel FET
ASMSASNKSIAS Anand
Superlattices and Microstructures, 2021
92021
Implementation of gate-all-around gate-engineered charge plasma nanowire FET-based common source amplifier
S Singh, LR Solay, S Anand, N Kumar, R Ranjan, A Singh
Micromachines 14 (7), 1357, 2023
72023
Doping-less TFET based common source amplifier implementation and behaviour analysis under symmetric and asymmetric conditions
A Bhardwaj, LR Solay, N Kumar, SI Amin, A Singh, B Raj, P Kumar, ...
Silicon 14 (18), 12251-12260, 2022
52022
Various applications of nanowires
Z Azam, A Singh
Innovative Applications of Nanowires for Circuit Design, 17-53, 2021
32021
Gate All around CNTFET based Ternary Content Addressable Memory
SSGA Singh
ECS Journal of Solid State Science and Technology 11 (6), 061006, 2022
22022
Design and Implementation of Negative Capacitance Based Electrostatic Doped Double Gate Tunnel Field Effect Transistor
MA Lone, LR Solay, A Singh, SI Amin, S Anand
Silicon 14 (18), 12293-12301, 2022
12022
Compact Model for a Negative Capacitance-Based Top-Gated Carbon-Nanotube Field-Effect Transistor
S Mairaj, A Singh
Journal of Electronic Materials, 1-15, 2024
2024
Low power Circuit Design Using Dynamic GDI Technique in CNTFET Technology
AS Rehal
Proceedings of the 18th ACM International Symposium on Nanoscale …, 2023
2023
Investigating the Impact of Intermediate Modulation Layer in RRAM on Multilevel Perceptron Performance
IH Wani, A Singh
2023 IEEE Silchar Subsection Conference (SILCON), 1-6, 2023
2023
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Articles 1–20