| GaN terahertz photodetectors for the reststrahlen gap of intersubband optoelectronics H Durmaz, D Nothern, G Brummer, TD Moustakas, R Paiella CLEO: Science and Innovations, SM4J. 7, 2017 | | 2017 |
| Thickness dependent thermal conductivity of gallium nitride E Ziade, J Yang, G Brummer, D Nothern, T Moustakas, AJ Schmidt Applied Physics Letters 110 (3), 2017 | 90 | 2017 |
| Structural and Optical Properties of Al0. 30Ga0. 70N/AlN Multiple Quantum Wells Grown on Vicinal 4H p-SiC Substrates by Molecular Beam Epitaxy G Brummer, D Nothern, TD Moustakas MRS Advances 2 (5), 271-276, 2017 | 1 | 2017 |
| Terahertz intersubband photodetectors based on semi-polar GaN/AlGaN heterostructures H Durmaz, D Nothern, G Brummer, TD Moustakas, R Paiella Applied Physics Letters 108 (20), 2016 | 50 | 2016 |
| Mapping Thickness Dependent Thermal Conductivity of GaN E Ziade, J Yang, G Brummer, D Nothern, T Moustaks, A Schmidt Journal of Heat Transfer 138 (2), 020906, 2016 | 3 | 2016 |
| Terahertz intersubband photodetectors based on semipolar III-nitride quantum wells H Durmaz, D Nothern, G Brummer, TD Moustakas, R Paiella Appl. Phys. Lett 108 (201102), 10.1063, 2016 | 4 | 2016 |
| Thermal transport through GaN–SiC interfaces from 300 to 600 K E Ziade, J Yang, G Brummer, D Nothern, T Moustakas, AJ Schmidt Applied Physics Letters 107 (9), 2015 | 72 | 2015 |
| Deep ultraviolet distributed Bragg reflectors based on graded composition AlGaN alloys G Brummer, D Nothern, AY Nikiforov, TD Moustakas Applied Physics Letters 106 (22), 2015 | 30 | 2015 |
| Breather decay into a vortex/antivortex pair in a Josephson ladder K Segall, P Williams, O Svitelskiy, D Edwards, N Zhelev, G Brummer, ... Physical Review B 90 (6), 064502, 2014 | 4 | 2014 |
| Using Polarization Effects in Deep UV Nitride Emitters G Brummer, H Sun, A Nikiforov, T Moustakas APS March Meeting Abstracts 2012, S1. 100, 2012 | | 2012 |
| Phase and amplitude modulator for microwave pulse generation G Brummer, R Rafique, TA Ohki IEEE transactions on applied superconductivity 21 (3), 583-586, 2010 | 10 | 2010 |
