| Method of forming a dielectic film that contains silicon, oxygen and nitrogen and method of fabricating a semiconductor device that uses such a dielectric film T Ohmi, S Sugawa, M Hirayama, Y Shirai US Patent 7,718,484, 2010 | 412 | 2010 |
| Plasma processing device T Ohmi, M Hirayama, S Sugawa, T Goto US Patent App. 10/276,721, 2003 | 284 | 2003 |
| Plasma processing apparatus T Ohmi, M Hirayama, S Sugawa, T Goto US Patent 7,670,454, 2010 | 212 | 2010 |
| A 100 dB dynamic range CMOS image sensor using a lateral overflow integration capacitor S Sugawa, N Akahane, S Adachi, K Mori, T Ishiuchi, K Mizobuchi ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State …, 2005 | 182 | 2005 |
| A sensitivity and linearity improvement of a 100-dB dynamic range CMOS image sensor using a lateral overflow integration capacitor N Akahane, S Sugawa, S Adachi, K Mori, T Ishiuchi, K Mizobuchi IEEE journal of solid-state circuits 41 (4), 851-858, 2006 | 174 | 2006 |
| Solid-state image pickup device T Kochi, S Sugawa, I Ueno, K Ogawa, T Koizumi, K Sakurai, H Hiyama US Patent 6,188,094, 2001 | 167 | 2001 |
| Image sensing device using MOS-type image sensing element whose threshold voltage of charge transfer switch and reset switch is different from that of signal output transistor T Kochi, S Sugawa, I Ueno, K Ogawa, T Koizumi, K Sakurai, H Hiyama US Patent 6,670,990, 2003 | 162 | 2003 |
| A global-shutter CMOS image sensor with readout speed of 1-Tpixel/s burst and 780-Mpixel/s continuous Y Tochigi, K Hanzawa, Y Kato, R Kuroda, H Mutoh, R Hirose, H Tominaga, ... IEEE Journal of Solid-State Circuits 48 (1), 329-338, 2012 | 159 | 2012 |
| Solid state image pickup apparatus T Kochi, S Sugawa, I Ueno, T Koizumi, K Sakurai, H Hiyama US Patent 7,110,030, 2006 | 135 | 2006 |
| Silicon-on-insulator CMOS device and a liquid crystal display with controlled base insulator thickness S Inoue, T Koizumi, M Miyawaki, S Sugawa US Patent 5,412,240, 1995 | 123 | 1995 |
| Liquid crystal display device J Hoshi, S Sugawa, S Inoue, O Hamamoto, Y Fukumoto, Y Genchi, ... US Patent 5,691,794, 1997 | 105 | 1997 |
| Amplification-type solid state imaging device with reduced shading T Yoneda, S Sugawa, T Koizumi, T Kochi US Patent 7,016,089, 2006 | 101 | 2006 |
| Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip H Oozu, M Miyawaki, A Ishizaki, S Sugawa US Patent 5,453,611, 1995 | 98 | 1995 |
| Solid-state imaging device, line sensor and optical sensor and method of operating solid-state imaging device S Sugawa US Patent 7,518,143, 2009 | 97 | 2009 |
| Very high carrier mobility for high-performance CMOS on a Si (110) surface A Teramoto, T Hamada, M Yamamoto, P Gaubert, H Akahori, K Nii, ... IEEE Transactions on Electron Devices 54 (6), 1438-1445, 2007 | 94 | 2007 |
| Image sensing device using MOS type image sensing elements T Kochi, S Sugawa, I Ueno, K Ogawa, T Koizumi, K Sakurai, H Hiyama US Patent 6,946,637, 2005 | 94 | 2005 |
| Signal processor having avalanche photodiodes S Sugawa US Patent 5,401,952, 1995 | 92 | 1995 |
| Liquid crystal image display unit and method for fabricating semiconductor optical member T Yonehara, M Miyawaki, A Ishizaki, J Hoshi, M Sakamoto, S Sugawa, ... US Patent 5,530,266, 1996 | 90 | 1996 |
| Solid-state image pickup device using layers having different refractive indices T Kochi, S Sugawa, I Ueno, K Ogawa, T Koizumi, K Sakurai, H Hiyama US Patent 6,605,850, 2003 | 89 | 2003 |
| Solid-state imaging device, optical sensor and method of operating solid-state imaging device S Sugawa, S Adachi, K Yahata, T Terada US Patent 7,800,673, 2010 | 87 | 2010 |
