"XBn" barrier photodetectors for high sensitivity and high operating temperature infrared sensors P Klipstein Infrared Technology and Applications XXXIV 6940, 935-946, 2008 | 288 | 2008 |
Depletion-less photodiode with suppressed dark current and method for producing the same P Klipstein US Patent 7,795,640, 2010 | 166 | 2010 |
Stoichiometry dependence of the transport properties of TiS2 PC Klipstein, AG Bagnall, WY Liang, EA Marseglia, RH Friend Journal of Physics C: Solid State Physics 14 (28), 4067, 1981 | 146 | 1981 |
Semiconductor to semimetal transition in TiS2 at 40 kbar PC Klipstein, RH Friend Journal of Physics C: Solid State Physics 17 (15), 2713, 1984 | 120 | 1984 |
Modeling inas/gasb and inas/inassb superlattice infrared detectors PC Klipstein, Y Livneh, A Glozman, S Grossman, O Klin, N Snapi, E Weiss Journal of electronic materials 43, 2984-2990, 2014 | 114 | 2014 |
A theory for the electroreflectance spectra of quantum well structures PC Klipstein, N Apsley Journal of Physics C: Solid State Physics 19 (32), 6461, 1986 | 111 | 1986 |
Stoichiometry effects in angle-resolved photoemission and transport studies of Ti1+ xS2 JJ Barry, HP Hughes, PC Klipstein, RH Friend Journal of Physics C: Solid State Physics 16 (2), 393, 1983 | 107 | 1983 |
XBn barrier photodetectors based on InAsSb with high operating temperatures P Klipstein, O Klin, S Grossman, N Snapi, I Lukomsky, D Aronov, ... Optical Engineering 50 (6), 061002-061002-10, 2011 | 101 | 2011 |
k· p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices Y Livneh, PC Klipstein, O Klin, N Snapi, S Grossman, A Glozman, E Weiss Physical Review B 86 (23), 235311, 2012 | 96 | 2012 |
Growth and characterisation of semiconductors: papers contributing to a short course RA Stradling, P Klipstein (No Title), 1991 | 91 | 1991 |
Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ− X crossover IE Itskevich, SG Lyapin, IA Troyan, PC Klipstein, L Eaves, PC Main, ... Physical Review B 58 (8), R4250, 1998 | 87 | 1998 |
XBn barrier detectors for high operating temperatures P Klipstein, O Klin, S Grossman, N Snapi, B Yaakobovitz, M Brumer, ... Quantum Sensing and Nanophotonic Devices VII 7608, 580-589, 2010 | 82 | 2010 |
InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs E Weiss, O Klin, S Grossmann, N Snapi, I Lukomsky, D Aronov, M Yassen, ... Journal of crystal growth 339 (1), 31-35, 2012 | 71 | 2012 |
Unipolar semiconductor photodetector with suppressed dark current and method for producing the same P Klipstein US Patent 8,004,012, 2011 | 70 | 2011 |
Low SWaP MWIR detector based on XBn focal plane array PC Klipstein, Y Gross, D Aronov, M Ben Ezra, E Berkowicz, Y Cohen, ... Infrared Technology and Applications XXXIX 8704, 524-535, 2013 | 64 | 2013 |
High operating temperature XBn-InAsSb bariode detectors P Klipstein, O Klin, S Grossman, N Snapi, I Lukomsky, M Yassen, ... Quantum Sensing and Nanophotonic Devices IX 8268, 180-187, 2012 | 59 | 2012 |
MWIR InAsSb XBn detectors for high operating temperatures P Klipstein, O Klin, S Grossman, N Snapi, B Yaakobovitz, M Brumer, ... Infrared Technology and Applications XXXVI 7660, 939-947, 2010 | 59 | 2010 |
Type II superlattice technology for LWIR detectors PC Klipstein, E Avnon, D Azulai, Y Benny, R Fraenkel, A Glozman, ... Infrared Technology and Applications XLII 9819, 216-225, 2016 | 55 | 2016 |
High-performance IR detectors at SCD present and future O Nesher, PC Klipstein Opto-Electronics Review 14, 59-68, 2006 | 54 | 2006 |
Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field E Alphandéry, RJ Nicholas, NJ Mason, SG Lyapin, PC Klipstein Physical Review B 65 (11), 115322, 2002 | 53 | 2002 |