Follow
Philip Klipstein
Philip Klipstein
Principle Investigator, SemiConductor Devices
Verified email at scd.co.il
Title
Cited by
Cited by
Year
"XBn" barrier photodetectors for high sensitivity and high operating temperature infrared sensors
P Klipstein
Infrared Technology and Applications XXXIV 6940, 935-946, 2008
2882008
Depletion-less photodiode with suppressed dark current and method for producing the same
P Klipstein
US Patent 7,795,640, 2010
1662010
Stoichiometry dependence of the transport properties of TiS2
PC Klipstein, AG Bagnall, WY Liang, EA Marseglia, RH Friend
Journal of Physics C: Solid State Physics 14 (28), 4067, 1981
1461981
Semiconductor to semimetal transition in TiS2 at 40 kbar
PC Klipstein, RH Friend
Journal of Physics C: Solid State Physics 17 (15), 2713, 1984
1201984
Modeling inas/gasb and inas/inassb superlattice infrared detectors
PC Klipstein, Y Livneh, A Glozman, S Grossman, O Klin, N Snapi, E Weiss
Journal of electronic materials 43, 2984-2990, 2014
1142014
A theory for the electroreflectance spectra of quantum well structures
PC Klipstein, N Apsley
Journal of Physics C: Solid State Physics 19 (32), 6461, 1986
1111986
Stoichiometry effects in angle-resolved photoemission and transport studies of Ti1+ xS2
JJ Barry, HP Hughes, PC Klipstein, RH Friend
Journal of Physics C: Solid State Physics 16 (2), 393, 1983
1071983
XBn barrier photodetectors based on InAsSb with high operating temperatures
P Klipstein, O Klin, S Grossman, N Snapi, I Lukomsky, D Aronov, ...
Optical Engineering 50 (6), 061002-061002-10, 2011
1012011
k· p model for the energy dispersions and absorption spectra of InAs/GaSb type-II superlattices
Y Livneh, PC Klipstein, O Klin, N Snapi, S Grossman, A Glozman, E Weiss
Physical Review B 86 (23), 235311, 2012
962012
Growth and characterisation of semiconductors: papers contributing to a short course
RA Stradling, P Klipstein
(No Title), 1991
911991
Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ− X crossover
IE Itskevich, SG Lyapin, IA Troyan, PC Klipstein, L Eaves, PC Main, ...
Physical Review B 58 (8), R4250, 1998
871998
XBn barrier detectors for high operating temperatures
P Klipstein, O Klin, S Grossman, N Snapi, B Yaakobovitz, M Brumer, ...
Quantum Sensing and Nanophotonic Devices VII 7608, 580-589, 2010
822010
InAsSb-based XBnn bariodes grown by molecular beam epitaxy on GaAs
E Weiss, O Klin, S Grossmann, N Snapi, I Lukomsky, D Aronov, M Yassen, ...
Journal of crystal growth 339 (1), 31-35, 2012
712012
Unipolar semiconductor photodetector with suppressed dark current and method for producing the same
P Klipstein
US Patent 8,004,012, 2011
702011
Low SWaP MWIR detector based on XBn focal plane array
PC Klipstein, Y Gross, D Aronov, M Ben Ezra, E Berkowicz, Y Cohen, ...
Infrared Technology and Applications XXXIX 8704, 524-535, 2013
642013
High operating temperature XBn-InAsSb bariode detectors
P Klipstein, O Klin, S Grossman, N Snapi, I Lukomsky, M Yassen, ...
Quantum Sensing and Nanophotonic Devices IX 8268, 180-187, 2012
592012
MWIR InAsSb XBn detectors for high operating temperatures
P Klipstein, O Klin, S Grossman, N Snapi, B Yaakobovitz, M Brumer, ...
Infrared Technology and Applications XXXVI 7660, 939-947, 2010
592010
Type II superlattice technology for LWIR detectors
PC Klipstein, E Avnon, D Azulai, Y Benny, R Fraenkel, A Glozman, ...
Infrared Technology and Applications XLII 9819, 216-225, 2016
552016
High-performance IR detectors at SCD present and future
O Nesher, PC Klipstein
Opto-Electronics Review 14, 59-68, 2006
542006
Photoluminescence of self-assembled InSb quantum dots grown on GaSb as a function of excitation power, temperature, and magnetic field
E Alphandéry, RJ Nicholas, NJ Mason, SG Lyapin, PC Klipstein
Physical Review B 65 (11), 115322, 2002
532002
The system can't perform the operation now. Try again later.
Articles 1–20