| Characterisation of the effect of surface passivation with SiO2/SiN on deep levels in AlGaN/GaN/Si HEMTs F Jabli, MA Zaidi, NB Hamadi, S Althoyaib, M Gassoumi Journal of alloys and compounds 653, 624-628, 2015 | 15 | 2015 |
| Optical analysis of biaxial stress distribution in Al0. 26Ga0. 74N/GaN/Si HEMT's F Jabli, MA Zaidi, M Gassoumi, H Mosbahi, M Charfeddine, T Alharbi, ... Journal of Alloys and Compounds 650, 533-536, 2015 | 11 | 2015 |
| Electron/transport in (Mo/Au)/AlGaN/GaN Schottky diode F Jabli, H Mosbahi, M Gassoumi, C Gaquierec, MA Zaidi, H Maaref IOSR J. Appl. Phys.(IOSR-JAP) 6, 27-34, 2014 | 5 | 2014 |
| Analysis of thermal effects on electrical characterization of AlGaN/GaN/Si FAT-HEMTs F Jabli, M Gassoumi, NB Hamadi, M Charfeddine, T Alharbi, MA Zaidi, ... Silicon 9, 629-635, 2017 | 4 | 2017 |
| Improvement in Electrical and 2DEG Properties of Al0.26Ga0.74N|GaN|Si HEMTs F Jabli, S Dhouibi, M Gassoumi Semiconductors 55, 379-383, 2021 | | 2021 |
| Deep traps responsible for capacitance hysteresis in AlGaN/GaN FAT-HEMT's studied under the temperature effects M Charfeddine, F Jabli, MA Zaidi, H Maaref Journal of Optoelectronics and Advanced Materials 16 (7-8), 820-825, 2014 | | 2014 |
