| 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3MOSFETs K Zeng, A Vaidya, U Singisetti IEEE Electron Device Letters 39 (9), 1385-1388, 2018 | 215 | 2018 |
| A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mΩ· cm2 on-resistance K Zeng, A Vaidya, U Singisetti Applied Physics Express 12 (8), 081003, 2019 | 81 | 2019 |
| Enhancement Mode β-(AlxGa1-x)2O3/Ga2O3 Heterostructure FET (HFET) With High Transconductance and Cutoff Frequency A Vaidya, CN Saha, U Singisetti IEEE Electron Device Letters 42 (10), 1444-1447, 2021 | 43 | 2021 |
| Structural, band and electrical characterization of β-(Al0. 19Ga0. 81) 2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate A Vaidya, J Sarker, Y Zhang, L Lubecki, J Wallace, JD Poplawsky, ... Journal of Applied Physics 126 (9), 2019 | 35 | 2019 |
| Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ... Applied Physics Letters 122 (18), 2023 | 16 | 2023 |
| Temperature dependent pulsed IV and RF characterization of β-(AlxGa1− x) 2O3/Ga2O3 hetero-structure FET with ex situ passivation CN Saha, A Vaidya, U Singisetti Applied Physics Letters 120 (17), 2022 | 15 | 2022 |
| Temperature-Dependent Current Dispersion Study in β-Ga₂O₃ FETs Using Submicrosecond Pulsed IV Characteristics A Vaidya, U Singisetti IEEE Transactions on Electron Devices, 2021 | 12 | 2021 |
| Temperature-Dependent Current Dispersion Study in β-Ga₂O₃ FETs Using Submicrosecond Pulsed I–V Characteristics A Vaidya, U Singisetti IEEE Transactions on Electron Devices 68 (8), 3755-3761, 2021 | 12 | 2021 |
| 710 V breakdown voltage in field plated Ga203 MOSFET K Zeng, A Vaidya, U Singisetti 2018 76th device research conference (DRC), 1-2, 2018 | 7 | 2018 |
| Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown -Ga2O3 S Sharma, K Zeng, A Vaidya, U Singisetti 2019 Device Research Conference (DRC), 151-152, 2019 | 2 | 2019 |
| Pt, Ni and Ti Schottky barrier contacts to\{beta}-(Al0. 19Ga0. 81) 2O3 grown by Molecular Beam Epitaxy on Sn doped\{beta}-Ga2O3 substrate A Vaidya, K Sasaki, A Kuramata, T Masui, U Singisetti arXiv preprint arXiv:1803.07504, 2018 | 1 | 2018 |
| Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field CN Saha, A Vaidya, AFM Bhuiyan, L Meng, H Zhao, U Singisetti arXiv preprint arXiv:2211.01088, 2022 | | 2022 |
| Gallium oxide based power and RF device technologies U Singisetti, S Sharma, K Zeng, A Vaidya, S Saha, A Kumar, A Sharma Radar Sensor Technology XXV 11742, 117420V, 2021 | | 2021 |
| Transient Response and Heterostructure Characterization of Beta Gallium Oxide Devices for High Frequency Operation A Vaidya State University of New York at Buffalo, 2021 | | 2021 |
| (Invited) Electron Transport in Bulk and 2DEGs in beta-Ga2O3 and kV Class Laterals Device in beta-Ga2O3 K Ghosh, K Zhang, A Vaidya, A Sharma, A Kumar, U Singisetti Electrochemical Society Meeting Abstracts 237, 1336-1336, 2020 | | 2020 |
Uttam SingisettiProfessor, Electrical Engineering, Univeristy at Buffalo (SUNY)Verified email at buffalo.edu
