| Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures DF Reyes, F Bastiman, CJ Hunter, DL Sales, AM Sanchez, JPR David, ... Nanoscale research letters 9, 1-8, 2014 | 69 | 2014 |
| High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing JM Ulloa, JM Llorens, B Alén, DF Reyes, DL Sales, D González, A Hierro Applied Physics Letters 101 (25), 2012 | 34 | 2012 |
| Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells AD Utrilla, DF Reyes, JM Llorens, I Artacho, T Ben, D González, Ž Gačević, ... Solar Energy Materials and Solar Cells 159, 282-289, 2017 | 31 | 2017 |
| Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate AD Utrilla, DF Grossi, DF Reyes, A Gonzalo, V Braza, T Ben, D González, ... Applied Surface Science 444, 260-266, 2018 | 30 | 2018 |
| Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications DF Reyes, V Braza, A Gonzalo, AD Utrilla, JM Ulloa, T Ben, D González Applied Surface Science 442, 664-672, 2018 | 29 | 2018 |
| Strain-balanced type-II superlattices for efficient multi-junction solar cells A Gonzalo, AD Utrilla, DF Reyes, V Braza, JM Llorens, D Fuertes Marrón, ... Scientific reports 7 (1), 4012, 2017 | 29 | 2017 |
| Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy L Dominguez, DF Reyes, F Bastiman, DL Sales, RD Richards, D Mendes, ... Applied Physics Express 6 (11), 112601, 2013 | 29 | 2013 |
| General route for the decomposition of InAs quantum dots during the capping process D González, DF Reyes, AD Utrilla, T Ben, V Braza, A Guzman, A Hierro, ... Nanotechnology 27 (12), 125703, 2016 | 28 | 2016 |
| Influence of substrate crystallography on the room temperature synthesis of AlN thin films by reactive sputtering GF Iriarte, DF Reyes, D González, JG Rodriguez, R García, F Calle Applied Surface Science 257 (22), 9306-9313, 2011 | 28 | 2011 |
| Sb and N incorporation interplay in GaAsSbN/GaAs epilayers near lattice-matching condition for 1.0–1.16-eV photonic applications V Braza, DF Reyes, A Gonzalo, AD Utrilla, T Ben, JM Ulloa, D González Nanoscale research letters 12, 1-10, 2017 | 27 | 2017 |
| Independent tuning of electron and hole confinement in InAs/GaAs quantum dots through a thin GaAsSbN capping layer JM Ulloa, DF Reyes, M Montes, K Yamamoto, DL Sales, D Gonzalez, ... Applied Physics Letters 100 (1), 2012 | 27 | 2012 |
| Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process D González, V Braza, AD Utrilla, A Gonzalo, DF Reyes, T Ben, A Guzman, ... Nanotechnology 28 (42), 425702, 2017 | 24 | 2017 |
| Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots D Gonzalez, DF Reyes, T Ben, AD Utrilla, A Guzman, A Hierro, JM Ulloa Solar Energy Materials and Solar Cells 145, 154-161, 2016 | 22 | 2016 |
| Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures AR Mohmad, F Bastiman, CJ Hunter, F Harun, DF Reyes, DL Sales, ... Semiconductor Science and Technology 30 (9), 094018, 2015 | 22 | 2015 |
| Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states A Gonzalo, L Stanojević, AD Utrilla, DF Reyes, V Braza, DF Marrón, T Ben, ... Solar Energy Materials and Solar Cells 200, 109949, 2019 | 20 | 2019 |
| Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots DF Reyes, D González, JM Ulloa, DL Sales, L Dominguez, A Mayoral, ... Nanoscale Research Letters 7, 1-7, 2012 | 20 | 2012 |
| Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing V Braza, DF Reyes, A Gonzalo, AD Utrilla, JM Ulloa, S Flores, T Ben, ... Applied Surface Science 459, 1-8, 2018 | 19 | 2018 |
| Impact of alloyed capping layers on the performance of InAs quantum dot solar cells AD Utrilla, JM Ulloa, Ž Gačević, DF Reyes, I Artacho, T Ben, D González, ... Solar Energy Materials and Solar Cells 144, 128-135, 2016 | 18 | 2016 |
| Capping layer growth rate and the optical and structural properties of GaAsSbN-capped InAs/GaAs quantum dots JM Ulloa, DF Reyes, AD Utrilla, A Guzman, A Hierro, T Ben, D González Journal of Applied Physics 116 (13), 2014 | 18 | 2014 |
| GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics AD Utrilla, DF Reyes, JM Ulloa, D González, T Ben, A Guzman, A Hierro Applied Physics Letters 105 (4), 2014 | 18 | 2014 |
