| Cavity polaritons in InGaN microcavities at room temperature T Tawara, H Gotoh, T Akasaka, N Kobayashi, T Saitoh Physical review letters 92 (25), 256402, 2004 | 110 | 2004 |
| Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors T Tawara, H Gotoh, T Akasaka, N Kobayashi, T Saitoh Applied physics letters 83 (5), 830-832, 2003 | 106 | 2003 |
| Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature G Zhang, M Takiguchi, K Tateno, T Tawara, M Notomi, H Gotoh Science advances 5 (2), eaat8896, 2019 | 79 | 2019 |
| Structural and optical properties of Zn (Mg, Cd) O alloy films grown by remote-plasma-enhanced MOCVD K Yamamoto, T Tsuboi, T Ohashi, T Tawara, H Gotoh, A Nakamura, ... Journal of crystal growth 312 (10), 1703-1708, 2010 | 61 | 2010 |
| Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells H Gotoh, T Tawara, Y Kobayashi, N Kobayashi, T Saitoh Applied physics letters 83 (23), 4791-4793, 2003 | 61 | 2003 |
| Growth and luminescence properties of self-organized ZnSe quantum dots T Tawara, S Tanaka, H Kumano, I Suemune Applied physics letters 75 (2), 235-237, 1999 | 54 | 1999 |
| Coherent transfer of orbital angular momentum to excitons by optical four-wave mixing Y Ueno, Y Toda, S Adachi, R Morita, T Tawara Optics express 17 (22), 20567-20574, 2009 | 53 | 2009 |
| Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect G Zhang, K Tateno, H Sanada, T Tawara, H Gotoh, H Nakano Applied Physics Letters 95 (12), 2009 | 53 | 2009 |
| Doping design of GaN‐based heterostructure field‐effect transistors with high electron density for high‐power applications N Maeda, T Tawara, T Saitoh, K Tsubaki, N Kobayashi physica status solidi (a) 200 (1), 168-174, 2003 | 38 | 2003 |
| Cavity-QED assisted attraction between a cavity mode and an exciton mode in a planar photonic-crystal cavity T Tawara, H Kamada, T Tanabe, T Sogawa, H Okamoto, P Yao, ... Optics express 18 (3), 2719-2728, 2010 | 36 | 2010 |
| Stability of CdSe and ZnSe dots self-organized on semiconductor surfaces I Suemune, T Tawara, T Saitoh, K Uesugi Applied physics letters 71 (26), 3886-3888, 1997 | 36 | 1997 |
| Microcavities with distributed Bragg reflectors based on ZnSe/MgS superlattice grown by MOVPE T Tawara, H Yoshida, T Yogo, S Tanaka, I Suemune Journal of crystal growth 221 (1-4), 699-703, 2000 | 33 | 2000 |
| High drain current density and reduced gate leakage current in channel-doped AlGaN∕ GaN heterostructure field-effect transistors with Al2O3∕ Si3N4 gate insulator N Maeda, C Wang, T Enoki, T Makimoto, T Tawara Applied Physics Letters 87 (7), 2005 | 30 | 2005 |
| Growth and characterization of telecommunication-wavelength quantum dots using Bi as a surfactant H Okamoto, T Tawara, H Gotoh, H Kamada, T Sogawa Japanese Journal of Applied Physics 49 (6S), 06GJ01, 2010 | 27 | 2010 |
| Anisotropy in ultrafast carrier and phonon dynamics in p-type heavily doped Si K Kato, A Ishizawa, K Oguri, K Tateno, T Tawara, H Gotoh, M Kitajima, ... Japanese journal of applied physics 48 (10R), 100205, 2009 | 23 | 2009 |
| Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition NI Cade, H Gotoh, H Kamada, T Tawara, T Sogawa, H Nakano, ... Applied Physics Letters 87 (17), 2005 | 23 | 2005 |
| Fabrication of an InGaN multiple-quantum-well laser diode featuring high reflectivity semiconductor/air distributed Bragg reflectors H Wang, M Kumagai, T Tawara, T Nishida, T Akasaka, N Kobayashi, ... Applied physics letters 81 (25), 4703-4705, 2002 | 23 | 2002 |
| Population dynamics in epitaxial Er2O3 thin films grown on Si (111) T Tawara, H Omi, T Hozumi, R Kaji, S Adachi, H Gotoh, T Sogawa Applied Physics Letters 102 (24), 2013 | 22 | 2013 |
| Cavity mode emission in weakly coupled quantum dot-cavity systems T Tawara, H Kamada, S Hughes, H Okamoto, M Notomi, T Sogawa Optics Express 17 (8), 6643-6654, 2009 | 22 | 2009 |
| Energy transfers between Er3+ ions located at the two crystalographic sites of Er2O3 grown on Si (111) H Omi, T Tawara Japanese Journal of Applied Physics 51 (2S), 02BG07, 2012 | 21 | 2012 |
Kouta TatenoNTT物性科学基礎研究所確認したメール アドレス: lab.ntt.co.jp
