| Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang, JC Lee, ... Nano letters 18 (1), 434-441, 2018 | 487 | 2018 |
| Thinnest nonvolatile memory based on monolayer h‐BN X Wu, R Ge, PA Chen, H Chou, Z Zhang, Y Zhang, S Banerjee, ... Advanced Materials 31 (15), 1806790, 2019 | 227 | 2019 |
| Zero-static power radio-frequency switches based on MoS2 atomristors M Kim, R Ge, X Wu, X Lan, J Tice, JC Lee, D Akinwande Nature communications 9 (1), 2524, 2018 | 175 | 2018 |
| Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems M Kim, E Pallecchi, R Ge, X Wu, G Ducournau, JC Lee, H Happy, ... Nature Electronics 3 (8), 479-485, 2020 | 112 | 2020 |
| A library of atomically thin 2D materials featuring the conductive‐point resistive switching phenomenon R Ge, X Wu, L Liang, SM Hus, Y Gu, E Okogbue, H Chou, J Shi, Y Zhang, ... Advanced Materials 33 (7), 2007792, 2021 | 93 | 2021 |
| Dynamic conductance characteristics in HfO x-based resistive random access memory YC Chen, YF Chang, X Wu, F Zhou, M Guo, CY Lin, CC Hsieh, B Fowler, ... RSC advances 7 (21), 12984-12989, 2017 | 36 | 2017 |
| Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application YC Chen, CY Lin, HC Huang, S Kim, B Fowler, YF Chang, X Wu, G Xu, ... Journal of Physics D: Applied Physics 51 (5), 055108, 2018 | 26 | 2018 |
| Plasma-Enhanced Atomic Layer Deposition of Cobalt Films Using Co(EtCp)2 as a Metal Precursor B Zhu, ZJ Ding, X Wu, WJ Liu, DW Zhang, SJ Ding Nanoscale research letters 14, 1-7, 2019 | 25 | 2019 |
| High-Performance On-Chip Supercapacitors Based on Mesoporous Silicon Coated with Ultrathin Atomic Layer-Deposited In2O3 Films B Zhu, X Wu, WJ Liu, HL Lu, DW Zhang, Z Fan, SJ Ding ACS applied materials & interfaces 11 (1), 747-752, 2018 | 25 | 2018 |
| Electron irradiation-induced defects for reliability improvement in monolayer MoS2-based conductive-point memory devices X Wu, Y Gu, R Ge, MI Serna, Y Huang, JC Lee, D Akinwande npj 2D Materials and Applications 6 (1), 31, 2022 | 24 | 2022 |
| Atomristors: Memory effect in atomically-thin sheets and record RF switches R Ge, X Wu, M Kim, PA Chen, J Shi, J Choi, X Li, Y Zhang, MH Chiang, ... 2018 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2018 | 24 | 2018 |
| A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO x layer F Zhou, YF Chang, YC Chen, X Wu, Y Zhang, B Fowler, JC Lee Physical Chemistry Chemical Physics 18 (2), 700-703, 2016 | 24 | 2016 |
| Dielectric Enhancement of Atomic Layer-Deposited Al2O3/ZrO2/Al2O3 MIM Capacitors by Microwave Annealing B Zhu, X Wu, WJ Liu, SJ Ding, DW Zhang, Z Fan Nanoscale research letters 14, 1-6, 2019 | 22 | 2019 |
| Understanding of multiple resistance states by current sweeping in MoS2-based non-volatile memory devices X Wu, R Ge, D Akinwande, JC Lee Nanotechnology 31 (46), 465206, 2020 | 19 | 2020 |
| Non-volatile RF and mm-wave switches based on monolayer hBN M Kim, E Pallecchi, R Ge, X Wu, V Avramovic, E Okada, JC Lee, H Happy, ... 2019 IEEE International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2019 | 19 | 2019 |
| Wafer-scalable single-layer amorphous molybdenum trioxide MH Alam, S Chowdhury, A Roy, X Wu, R Ge, MA Rodder, J Chen, Y Lu, ... ACS nano 16 (3), 3756-3767, 2022 | 17 | 2022 |
| Growth, physical and electrical characterization of nickel oxide thin films prepared by plasma-enhanced atomic layer deposition using nickelocene and oxygen precursors LY Xie, DQ Xiao, JX Pei, J Huo, X Wu, WJ Liu, SJ Ding Materials Research Express 7 (4), 046401, 2020 | 16 | 2020 |
| ReSe2-Based RRAM and Circuit-Level Model for Neuromorphic Computing Y Huang, Y Gu, X Wu, R Ge, YF Chang, X Wang, J Zhang, D Akinwande, ... Frontiers in Nanotechnology 3, 782836, 2021 | 11 | 2021 |
| Resistance state evolution under constant electric stress on a MoS 2 non-volatile resistive switching device X Wu, R Ge, Y Huang, D Akinwande, JC Lee RSC advances 10 (69), 42249-42255, 2020 | 10 | 2020 |
| Built-in nonlinear characteristics of low power operating one-resistor selector-less RRAM by stacking engineering YC Chen, YF Chang, CY Lin, X Wu, G Xu, B Fowler, TC Chang, JC Lee ECS Transactions 80 (10), 923, 2017 | 9 | 2017 |
