| Fabrication and characterisation of NiO/ZnO structures JM Nel, FD Auret, L Wu, MJ Legodi, WE Meyer, M Hayes Sensors and Actuators B: Chemical 100 (1-2), 270-276, 2004 | 68 | 2004 |
| Electrical characterization of growth-induced defects in bulk-grown ZnO FD Auret, JM Nel, M Hayes, L Wu, W Wesch, E Wendler Superlattices and Microstructures 39 (1-4), 17-23, 2006 | 61 | 2006 |
| Microstructures of electrodeposited CdS layers JM Nel, HL Gaigher, FD Auret Thin Solid Films 436 (2), 186-195, 2003 | 58 | 2003 |
| Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition MAM Ahmed, BS Mwankemwa, E Carleschi, BP Doyle, WE Meyer, JM Nel Materials Science in Semiconductor Processing 79, 53-60, 2018 | 57 | 2018 |
| The dependence of barrier height on temperature for Pd Schottky contacts on ZnO W Mtangi, FD Auret, C Nyamhere, PJJ van Rensburg, A Chawanda, ... Physica B: Condensed Matter 404 (22), 4402-4405, 2009 | 41 | 2009 |
| Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS W Mtangi, FD Auret, WE Meyer, MJ Legodi, PJ Janse van Rensburg, ... Journal of Applied Physics 111 (9), 2012 | 39 | 2012 |
| Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band FD Auret, WE Meyer, PJJ van Rensburg, M Hayes, JM Nel, ... Physica B: Condensed Matter 401, 378-381, 2007 | 37 | 2007 |
| Analysis of current–voltage measurements on Au/Ni/n-GaN Schottky contacts in a wide temperature range W Mtangi, PJJ van Rensburg, M Diale, FD Auret, C Nyamhere, JM Nel, ... Materials Science and Engineering: B 171 (1-3), 1-4, 2010 | 35 | 2010 |
| Thermal annealing behaviour of platinum, nickel and titanium Schottky barrier diodes on n-Ge (1 0 0) A Chawanda, C Nyamhere, FD Auret, W Mtangi, M Diale, JM Nel Journal of alloys and compounds 492 (1-2), 649-655, 2010 | 33 | 2010 |
| Structural, optical and electrical properties of the fabricated Schottky diodes based on ZnO, Ce and Sm doped ZnO films prepared via wet chemical technique MAM Ahmed, WE Meyer, JM Nel Materials Research Bulletin 115, 12-18, 2019 | 32 | 2019 |
| Electrical defects introduced during high-temperature irradiation of GaN and AlGaN M Hayes, FD Auret, L Wu, WE Meyer, JM Nel, MJ Legodi Physica B: Condensed Matter 340, 421-425, 2003 | 29 | 2003 |
| Effect of (Ce, Al) co-doped ZnO thin films on the Schottky diode properties fabricated using the sol-gel spin coating MAM Ahmed, WE Meyer, JM Nel Materials Science in Semiconductor Processing 103, 104612, 2019 | 27 | 2019 |
| Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods BS Mwankemwa, FJ Nambala, F Kyeyune, TT Hlatshwayo, JM Nel, ... Materials Science in Semiconductor Processing 71, 209-216, 2017 | 27 | 2017 |
| Influence (Ce and Sm) co-doping ZnO nanorods on the structural, optical and electrical properties of the fabricated Schottky diode using chemical bath deposition MA Ahmed, L Coetsee, WE Meyer, JM Nel Journal of Alloys and Compounds 810, 151929, 2019 | 24 | 2019 |
| Structural, morphological, optical and electrical properties of Schottky diodes based on CBD deposited ZnO: Cu nanorods BS Mwankemwa, MJ Legodi, M Mlambo, JM Nel, M Diale Superlattices and Microstructures 107, 163-171, 2017 | 24 | 2017 |
| Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes A Chawanda, W Mtangi, FD Auret, J Nel, C Nyamhere, M Diale Physica B: Condensed Matter 407 (10), 1574-1577, 2012 | 22 | 2012 |
| Boron carbide coatings on diamond particles AH Ras, FD Auret, JM Nel Diamond and related materials 19 (11), 1411-1414, 2010 | 22 | 2010 |
| Dependence of trap concentrations in ZnO thin films on annealing conditions H Von Wenckstern, G Biehne, M Lorenz, M Grundmann, FD Auret, ... Journal of the Korean Physical Society 53 (5), 2861-2863, 2008 | 21 | 2008 |
| Electrical characterization of defects introduced in n-type Ge during indium implantation FD Auret, PJ Janse van Rensburg, M Hayes, JM Nel, WE Meyer, ... Applied physics letters 89 (15), 2006 | 21 | 2006 |
| Structural, optical and electrical properties of a Schottky diode fabricated on Ce doped ZnO nanorods grown using a two step chemical bath deposition MAM Ahmed, WE Meyer, JM Nel Materials Science in Semiconductor Processing 87, 187-194, 2018 | 20 | 2018 |
Walter Ernst MeyerUniversity of PretoriaVerified email at up.ac.za
