| Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm X Tian, S Shibayama, T Nishimura, T Yajima, S Migita, A Toriumi Applied Physics Letters 112 (10), 2018 | 220 | 2018 |
| Kinetic pathway of the ferroelectric phase formation in doped HfO2 films L Xu, T Nishimura, S Shibayama, T Yajima, S Migita, A Toriumi Journal of Applied Physics 122 (12), 2017 | 191 | 2017 |
| Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks T Nishimura, L Xu, S Shibayama, T Yajima, S Migita, A Toriumi Japanese journal of applied physics 55 (8S2), 08PB01, 2016 | 107 | 2016 |
| Ferroelectric phase stabilization of HfO2 by nitrogen doping L Xu, T Nishimura, S Shibayama, T Yajima, S Migita, A Toriumi Applied Physics Express 9 (9), 091501, 2016 | 103 | 2016 |
| Thermodynamic control of ferroelectric-phase formation in HfxZr1− xO2 and ZrO2 S Shibayama, T Nishimura, S Migita, A Toriumi Journal of Applied Physics 124 (18), 2018 | 54 | 2018 |
| Experimental observation of type-I energy band alignment in lattice-matched Ge1− x− ySixSny/Ge heterostructures T Yamaha, S Shibayama, T Asano, K Kato, M Sakashita, W Takeuchi, ... Applied Physics Letters 108 (6), 2016 | 33 | 2016 |
| Density functional study for crystalline structures and electronic properties of Si1− xSnx binary alloys Y Nagae, M Kurosawa, S Shibayama, M Araidai, M Sakashita, ... Japanese Journal of Applied Physics 55 (8S2), 08PE04, 2016 | 26 | 2016 |
| General relationship for cation and anion doping effects on ferroelectric HfO2 formation L Xu, S Shibayama, K Izukashi, T Nishimura, T Yajima, S Migita, A Toriumi 2016 IEEE International Electron Devices Meeting (IEDM), 25.2. 1-25.2. 4, 2016 | 25 | 2016 |
| Stabilized formation of tetragonal ZrO2 thin film with high permittivity K Kato, T Saito, S Shibayama, M Sakashita, W Takeuchi, N Taoka, ... Thin Solid Films 557, 192-196, 2014 | 25 | 2014 |
| Improvement of Al2O3/Ge interfacial properties by O2-annealing S Shibayama, K Kato, M Sakashita, W Takeuchi, O Nakatsuka, S Zaima Thin Solid Films 520 (8), 3397-3401, 2012 | 24 | 2012 |
| Impacts of AlGeO formation by post thermal oxidation of Al2O3/Ge structure on interfacial properties S Shibayama, K Kato, M Sakashita, W Takeuchi, N Taoka, O Nakatsuka, ... Thin Solid Films 557, 282-287, 2014 | 19 | 2014 |
| Ferroelectric phase formation for undoped ZrO2 thin films by wet O2 annealing S Shibayama, J Nagano, M Sakashita, O Nakatsuka Japanese Journal of Applied Physics 59 (SM), SMMA04, 2020 | 16 | 2020 |
| Interfacial reaction mechanisms in Al2O3/Ge structure by oxygen radical process K Kato, S Shibayama, M Sakashita, W Takeuchi, N Taoka, O Nakatsuka, ... Japanese Journal of Applied Physics 52 (4S), 04CA08, 2013 | 15 | 2013 |
| Development of ONO-4538, fully human anti-PD-1 antibody for malignant tumors S Shibayama, T Yoshida Medical Science Digest 36 (12), 1120-1123, 0 | 14 | |
| Study of wake-up and fatigue properties in doped and undoped ferroelectric HfO2 in conjunction with piezo-response force microscopy analysis S Shibayama, L Xu, S Migita, A Toriumi 2016 IEEE Symposium On Vlsi Technology, 1-2, 2016 | 12 | 2016 |
| Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure S Shibayama, K Kato, M Sakashita, W Takeuchi, N Taoka, O Nakatsuka, ... Applied Physics Letters 103 (8), 2013 | 12 | 2013 |
| Growth of ultrahigh-Sn-content Ge1− xSnx epitaxial layer and its impact on controlling Schottky barrier height of metal/Ge contact A Suzuki, O Nakatsuka, S Shibayama, M Sakashita, W Takeuchi, ... Japanese Journal of Applied Physics 55 (4S), 04EB12, 2016 | 11 | 2016 |
| Interface properties of Al2O3/Ge structures with thin Ge oxide interfacial layer formed by pulsed metal organic chemical vapor deposition T Yoshida, K Kato, S Shibayama, M Sakashita, N Taoka, W Takeuchi, ... Japanese Journal of Applied Physics 53 (8S1), 08LD03, 2014 | 11 | 2014 |
| Sub-nm EOT ferroelectric HfO2 on p+Ge with highly reliable field cycling properties X Tian, L Xu, S Shibayama, T Nishimura, T Yajima, S Migita, A Toriumi 2017 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2017 | 9 | 2017 |
| Reduction of Schottky barrier height at metal/n-Ge interface by introducing an ultra-high Sn content Ge1− xSnx interlayer A Suzuki, O Nakatsuka, S Shibayama, M Sakashita, W Takeuchi, ... Applied Physics Letters 107 (21), 2015 | 9 | 2015 |
