| Electronic and related properties of crystalline semiconducting iron disilicide AB Filonov, DB Migas, VL Shaposhnikov, NN Dorozhkin, GV Petrov, ... Journal of applied physics 79 (10), 7708-7712, 1996 | 158 | 1996 |
| Ab initio study of the band structures of different phases of higher manganese silicides DB Migas, VL Shaposhnikov, AB Filonov, VE Borisenko, NN Dorozhkin Physical Review B 77 (7), 075205, 2008 | 142 | 2008 |
| Semiconducting properties of hexagonal chromium, molybdenum, and tungsten disilicides AB Filonov, IE Tralle, NN Dorozhkin, DB Migas, VL Shaposhnikov, ... physica status solidi (b) 186 (1), 209-215, 1994 | 54 | 1994 |
| New semiconducting silicide Ca3Si4 DB Migas, VL Shaposhnikov, AB Filonov, NN Dorozhkin, VE Borisenko Journal of Physics: Condensed Matter 19 (34), 346207, 2007 | 46 | 2007 |
| Electronic properties of isostructural ruthenium and osmium silicides and germanides AB Filonov, DB Migas, VL Shaposhnikov, NN Dorozhkin, VE Borisenko, ... Physical Review B 60 (24), 16494, 1999 | 43 | 1999 |
| Electronic properties of semiconducting rhenium silicide AB Filonov, DB Migas, VL Shaposhnikov, NN Dorozhkin, VE Borisenko, ... Europhysics Letters 46 (3), 376, 1999 | 33 | 1999 |
| Electronic properties of semiconducting rhenium silicide AB Filonov, DB Migas, VL Shaposhnikov, NN Dorozhkin, VE Borisenko, ... Europhysics Letters 46 (3), 376, 1999 | 33 | 1999 |
| Electronic structure of TiB2 and ZrB2 VM Anishchik, NN Dorozhkin Physica Status Solidi B 160 (1), 173-177, 1990 | 28 | 1990 |
| Electronic properties of osmium disilicide AB Filonov, DB Migas, VL Shaposhnikov, NN Dorozhkin, VE Borisenko, ... Applied physics letters 70 (8), 976-977, 1997 | 24 | 1997 |
| X-ray absorption studies of Fe-based nanocrystalline alloys E Sobczak, Y Swilem, NN Dorozhkin, R Nietubyć, P Dłużewski, ... Journal of alloys and compounds 328 (1-2), 57-63, 2001 | 18 | 2001 |
| Features of the band structure for semiconducting iron, ruthenium, and osmium monosilicides VL Shaposhnikov, DB Migas, VE Borisenko, NN Dorozhkin Semiconductors 43, 142-144, 2009 | 15 | 2009 |
| Formation of Frenkel pairs and diffusion of self-interstitial in Si under normal and hydrostatic pressure: Quantumchemical simulation V Gusakov, V Belko, N Dorozhkin Physica B: Condensed Matter 404 (23-24), 4558-4560, 2009 | 13 | 2009 |
| Dynamic instability of band structure for Fe-containing nanostructured Langmuir-Blodgett films VM Anishchik, NN Dorozhkin, HV Grushevskaya, VV Hrushevsky, ... Nanotubes and Nanowires 5219, 141-150, 2003 | 10 | 2003 |
| Получение порошковых изделий и покрытий из материалов на железной основе/НН Дорожкин, ГГ Горанский, ВГ Люлько и др./БелНИИНТИ и ТЭИ Госплана БССР НН Дорожкин НН Дорожкин, ГГ Горанский, 1990 | 9 | 1990 |
| Multiple scattering calculations of Fe K EXAFS for Fe surfaces and nanocrystals E Sobczak, NN Dorozhkin Journal of alloys and compounds 286 (1-2), 108-113, 1999 | 8 | 1999 |
| Modeling of microstructure and elastic properties of nc-TiN/a-Si3N4 nanocomposite IV Safronov, VI Shymanski, VV Uglov, NT Kvasov, NN Dorozhkin Computational Materials Science 123, 256-262, 2016 | 7 | 2016 |
| Numerical simulation of electric characteristics of deep submicron silicon-on-insulator MOS transistor AV Borzdov, VM Borzdov, NN Dorozhkin Приборы и методы измерений 7 (2), 161-168, 2016 | 7* | 2016 |
| Matrix elements of the electron‐phonon interaction in the rigid electron density displacement approximation BV Novysh, NN Dorozhkin, EM Gololobov, VM Anishchik physica status solidi (b) 195 (1), 209-216, 1996 | 7 | 1996 |
| СТРУКТУРНЫЕ АМПЛИТУДЫ СОЕДИНЕНИЯ Ү1 Ва2 С 307 В ЛМТО-ПРИБЛИЖЕНИИ ЕМ Гололобов, НН Дорожкин, БВ Новыш Fizika tverdogo tela 35 (9-12), 2371, 1993 | 6 | 1993 |
| Компьютерное моделирование в физике твердого тела: лаб. практикум для студентов физ. фак./НН Дорожкин, НГ Якутович НН Дорожкин, НГ Якутович Минск: БГУ, 2010 | 5 | 2010 |
