| Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators CD Dimitrakopoulos, S Purushothaman, J Kymissis, A Callegari, JM Shaw Science 283 (5403), 822-824, 1999 | 1033 | 1999 |
| Ultrathin high-K gate stacks for advanced CMOS devices EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 350 | 2001 |
| Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel Journal of Applied Physics 90 (12), 6466-6475, 2001 | 339 | 2001 |
| Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti Journal of Applied physics 93 (11), 9298-9303, 2003 | 332 | 2003 |
| Liquid crystal alignment on carbonaceous surfaces with orientational order J Stöhr, MG Samant, J Lüning, AC Callegari, P Chaudhari, JP Doyle, ... Science 292 (5525), 2299-2302, 2001 | 319 | 2001 |
| Diamond-like carbon films from a hydrocarbon helium plasma FD Bailey, DA Buchanan, AC Callegari, HM Clearfield, FE Doany, ... US Patent 5,470,661, 1995 | 299 | 1995 |
| Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same LP Buchwalter, AC Callegari, SA Cohen, TO Graham, JP Hummel, ... US Patent 6,184,121, 2001 | 250 | 2001 |
| A comparative study of NBTI and PBTI (charge trapping) in SiO2/HfO2 stacks with FUSI, TiN, Re gates S Zafar, Y Kim, V Narayanan, C Cabral, V Paruchuri, B Doris, J Stathis, ... 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 23-25, 2006 | 244 | 2006 |
| Effects of interfacial microstructure on uniformity and thermal stability of AuNiGe ohmic contact to n‐type GaAs YC Shih, M Murakami, EL Wilkie, AC Callegari Journal of applied physics 62 (2), 582-590, 1987 | 217 | 1987 |
| Sputter deposition of hydrogenated amorphous carbon film and applications thereof ED Babich, AC Callegari, FE Doany, S Purushothaman US Patent 5,830,332, 1998 | 210 | 1998 |
| Methods for forming metal oxide layers with enhanced purity AC Callegari, FE Doany, EP Gousev, TH Zabel US Patent 6,395,650, 2002 | 206 | 2002 |
| Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment A Callegari, PD Hoh, DA Buchanan, D Lacey Applied Physics Letters 54 (4), 332-334, 1989 | 164 | 1989 |
| System for detecting a fault in a communication system PS Henry, I Gerszberg US Patent 10,291,334, 2019 | 156* | 2019 |
| Microstructure studies of AuNiGe Ohmic contacts to n‐type GaAs M Murakami, KD Childs, JM Baker, A Callegari Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 142 | 1986 |
| 80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/gate dielectric for ULSI applications DA Buchanan, EP Gusev, E Cartier, H Okorn-Schmidt, K Rim, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 137 | 2000 |
| Method of film deposition, and fabrication of structures AC Callegari, DA Neumayer US Patent 6,664,186, 2003 | 132 | 2003 |
| Low temperature thin film transistor fabrication AC Callegari, CD Dimitrakopoulos, S Purushothaman US Patent 6,207,472, 2001 | 118 | 2001 |
| Charge trapping in high k gate dielectric stacks S Zafar, A Callegari, E Gusev, MV Fischetti Digest. International Electron Devices Meeting,, 517-520, 2002 | 115 | 2002 |
| Inversion mode -channel GaAs field effect transistor with high-/metal gate JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ... Applied Physics Letters 92 (15), 153508, 2008 | 108 | 2008 |
| CVD tantalum compounds for FET get electrodes V Narayanan, F McFeely, K Milkove, J Yurkas, M Copel, P Jamison, ... US Patent App. 10/712,575, 2005 | 101 | 2005 |
Alfred GrillIBMVerified email at us.ibm.com
Alfred GrillIBMVerified email at us.ibm.com