| Extraction of the built-in potential for organic solar cells from current–voltage characteristics PK Manda, S Ramaswamy, S Dutta IEEE Transactions on Electron Devices 65 (1), 184-190, 2017 | 25 | 2017 |
| Study on inter band and inter sub-band optical transitions with varying InAs/InGaAs sub-monolayer quantum dot heterostructure stacks grown by molecular beam epitaxy SR Shriram, R Kumar, D Panda, J Saha, B Tongbram, MR Mantri, SA Gazi, ... IEEE Transactions on Nanotechnology 19, 601-608, 2020 | 10 | 2020 |
| The role and growth of strain–reducing layer by molecular-beam epitaxy in a multi–stack InAs/(In, Ga) As sub-monolayer quantum dot heterostructure SR Shriram, D Panda, R Kumar, J Saha, B Tongbram, MR Mantri, SA Gazi, ... Optical Materials 114, 110817, 2021 | 8 | 2021 |
| In-Situ Tailoring of Vertically Coupled InAs pip Quantum-Dot Infrared Photodetectors: Toward Homogeneous Dot Size Distribution and Minimization of In–Ga Intermixing S Dongre, S Paul, S Mondal, R Kumar, D Panda, SA Gazi, D Das, ... ACS Applied Electronic Materials 2 (5), 1243-1253, 2020 | 7 | 2020 |
| Subsiding strain-induced In-Ga intermixing in InAs/InxGa1− xAs sub-monolayer quantum dots for room temperature photodetectors SR Shriram, R Gourishetty, D Panda, D Das, S Dongre, J Saha, ... Infrared Physics & Technology 121, 104047, 2022 | 5 | 2022 |
| Investigation of non-linear dependence of exciton recombination efficiency on PCBM concentration in P3HT: PCBM blends A Babusenan, S Mondal, S Ramaswamy, S Dutta, M Gopalakrishnan, ... Materials Research Express 6 (8), 085309, 2019 | 4 | 2019 |
| Optimization of vertical strain coupling in InAs/GaAs pip quantum dot infrared photodetectors with applied growth strategy S Dongre, S Paul, S Mondal, D Panda, SR Shriram, MR Mantri, SA Gazi, ... Journal of Luminescence 226, 117499, 2020 | 3 | 2020 |
| Influence of InGaAs matrix thickness on the optical properties and strain distribution in self-assembled sub-monolayer InAs quantum dot heterostructures SR Shriram, R Kumar, SA Gazi, J Saha, D Panda, A Mandal, ... Nanophotonics VIII 11345, 287-293, 2020 | 3 | 2020 |
| Analytical Model and Experimental Analysis to Estimate the Interdiffusion and Optoelectronic Properties of Coupled InAs Quantum Dots Post Rapid Thermal Processing R Gourishetty, SR Shriram, DP Panda, S Chakrabarti IEEE Transactions on Electron Devices 69 (7), 3775-3782, 2022 | 2 | 2022 |
| Influence of Sb composition on the band alignment and optical characteristics of strain coupled vertically aligned InAs/GaAsSb quantum dots R Gourishetty, SR Shriram, DP Panda, S Chakrabarti Quantum Optics and Photon Counting 2021 11771, 129-135, 2021 | 2 | 2021 |
| Influence of Sb accumulation on the inter-band and inter-subband transitions of InAs/GaAs1-x Sbx sub-mono layer (SML) quantum dot heterostructures S Das, J Saha, SR Shriram, S Chakrabarti Superlattices and Microstructures 145, 106646, 2020 | 1 | 2020 |
| Study on optical properties and strain distribution of InAs/InGaAs sub-monolayer quantum dot heterostructure with multiple stacking layers SR Shriram, SA Gazi, R Kumar, J Saha, D Panda, A Mandal, ... Nanophotonics VIII 11345, 294-301, 2020 | 1 | 2020 |
| A comparative study of Dots-in-a-Double-Well (DDWELL) heterostructures with SK, SML and coupled SK-on-SML as active region A Saha, N Neelu, R Kumar, SR Shriram, S Chakrabarti Low-Dimensional Materials and Devices 2022 12200, 67-76, 2022 | | 2022 |
| Quaternary–alloyed capping for strain and band engineering in InAs sub–monolayer quantum dots SR Shriram, R Gourishetty, S Chakrabarti Micro and Nanostructures 165, 207189, 2022 | | 2022 |
| A systematic post-growth thermal annealing step for receding size inhomogeneity inside multiple InAs/Inx (Ga) 1-xAs sub-monolayer quantum-dot heterostructures SR Shriram, R Gourishetty, A Mandal, S Choudhary, A Kumar, ... Photonic and Phononic Properties of Engineered Nanostructures XII 12010, 61-69, 2022 | | 2022 |
| Fine-tuning of electron Eigen energy states in GaAs1-xNx capped InAs sub-monolayer quantum dots SR Shriram, S Chakrabarti Low-Dimensional Materials and Devices 2021 11800, 88-94, 2021 | | 2021 |
| Enhancing the quantum confinement effect by means of quaternary AlxGayIn1-x-yAs barrier material in type-I InAs/InxGa1-xAs SML QDs for laser applications SR Shriram, S Chakrabarti High Power Lasers and Applications 11777, 113-120, 2021 | | 2021 |
| Engineering mbe grown inas inxga1 xas sub monolayer quantum dot infrared photodetectors SR Shriram Mumbai, 0 | | |
| Details of Heterostructure A Saha, N Neelu, R Kumar, SR Shriram, S Chakrabarti | | |
Debi Prasad Pandaimec, BelgiumVerified email at imec.be
