| All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001) J Kwoen, B Jang, J Lee, T Kageyama, K Watanabe, Y Arakawa Optics express 26 (9), 11568-11576, 2018 | 122 | 2018 |
| High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001) J Kwoen, B Jang, K Watanabe, Y Arakawa Optics express 27 (3), 2681-2688, 2019 | 51 | 2019 |
| Classification of reflection high-energy electron diffraction pattern using machine learning J Kwoen, Y Arakawa Crystal Growth & Design 20 (8), 5289-5293, 2020 | 20 | 2020 |
| Elimination of anti-phase boundaries in a GaAs layer directly-grown on an on-axis Si (001) substrate by optimizing an AlGaAs nucleation layer J Kwoen, J Lee, K Watanabe, Y Arakawa Japanese Journal of Applied Physics 58 (SB), SBBE07, 2019 | 17 | 2019 |
| Quantum dot lasers for silicon photonics Y Arakawa, T Nakamura, J Kwoen Semiconductors and Semimetals 101, 91-138, 2019 | 16 | 2019 |
| InAs/InGaAs quantum dot lasers on multi-functional metamorphic buffer layers J Kwoen, T Imoto, Y Arakawa Optics Express 29 (18), 29378-29386, 2021 | 11 | 2021 |
| InAs/GaAs quantum dot infrared photodetectors on on‐axis Si (100) substrates H Yoshikawa, J Kwoen, T Doe, M Izumi, S Iwamoto, Y Arakawa Electronics Letters 54 (24), 1395-1397, 2018 | 10 | 2018 |
| Emission at 1.6 μm from InAs quantum dots in metamorphic InGaAs matrix W Zhan, S Ishida, J Kwoen, K Watanabe, S Iwamoto, Y Arakawa physica status solidi (b) 257 (2), 1900392, 2020 | 9 | 2020 |
| Growth of high‐quality InAs quantum dots embedded in GaAs nanowire structures on Si substrates J Kwoen, K Watanabe, Y Ota, S Iwamoto, Y Arakawa physica status solidi (c) 10 (11), 1496-1499, 2013 | 7 | 2013 |
| Classification of in situ reflection high energy electron diffraction images by principal component analysis J Kwoen, Y Arakawa Japanese Journal of Applied Physics 60 (SB), SBBK03, 2021 | 6 | 2021 |
| Detector T Kotani, H Yoshikawa, T Kitazawa, Y Arakawa, J Kwoen US Patent App. 15/843,144, 2018 | 6 | 2018 |
| E‐band InAs quantum dot laser on InGaAs metamorphic buffer layer with filter layer J Kwoen, W Zhan, Y Arakawa Electronics Letters 57 (14), 567-568, 2021 | 5 | 2021 |
| Multiclass classification of reflection high-energy electron diffraction patterns using deep learning J Kwoen, Y Arakawa Journal of Crystal Growth 593, 126780, 2022 | 3 | 2022 |
| Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition technique J Kwoen, K Watanabe, S Iwamoto, Y Arakawa Journal of crystal growth 378, 562-565, 2013 | 3 | 2013 |
| All III‐arsenide low threshold InAs quantum dot lasers on InP (001) J Kwoen, N Morais, W Zhan, S Iwamoto, Y Arakawa Electronics Letters 59 (16), e12920, 2023 | 2 | 2023 |
| The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation Y Hiraishi, T Shirai, J Kwoen, T Ito, Y Matsushima, H Ishikawa, Y Arakawa, ... physica status solidi (a) 217 (10), 1900851, 2020 | 2 | 2020 |
| Coherent Interaction of a Few-Electron Quantum Dot with a Terahertz Optical Resonator K Kuroyama, J Kwoen, Y Arakawa, K Hirakawa Physical Review Letters 132 (6), 066901, 2024 | 1 | 2024 |
| Electrical Detection of Ultrastrong Coherent Interaction between Terahertz Fields and Electrons Using Quantum Point Contacts K Kuroyama, J Kwoen, Y Arakawa, K Hirakawa Nano Letters 23 (24), 11402-11408, 2023 | 1 | 2023 |
| Coherent interaction between a gate-defined quantum dot and a terahertz split-ring resonator in the ultrastrong coupling regime K Kuroyama, J Kwoen, Y Arakawa, K Hirakawa 2022 47th International Conference on Infrared, Millimeter and Terahertz …, 2022 | 1 | 2022 |
| Hybrid distributed Bragg reflector laser on Si with a transfer printed InAs/GaAs quantum dot amplifier N Morais, J Fujikata, J Kwoen, T Nakamura, Y Ota, Y Arakawa Optics Express 32 (3), 4295-4304, 2024 | | 2024 |
Yasuhiko ArakawaThe University of TokyoVerified email at iis.u-tokyo.ac.jp
