| High-density ultrasmall epitaxial Ge islands on Si (111) surfaces with a SiO 2 coverage AA Shklyaev, M Shibata, M Ichikawa Physical Review B 62 (3), 1540, 2000 | 225 | 2000 |
| Leed studies of vicinal surfaces of silicon BZ Olshanetsky, AA Shklyaev Surface Science 82 (2), 445-452, 1979 | 129 | 1979 |
| Phase transitions on clean Si (110) surfaces BZ Olshanetsky, AA Shklyaev Surface Science 67 (2), 581-588, 1977 | 125 | 1977 |
| Extremely dense arrays of germanium and silicon nanostructures AA Shklyaev, M Ichikawa Physics-Uspekhi 51 (2), 133, 2008 | 98 | 2008 |
| LEED investigation of germanium surfaces cleaned by sublimation of sulphide films; structural transitions on clean Ge (110) surface BZ Olshanetsky, SM Repinsky, AA Shklyaev Surface Science 64 (1), 224-236, 1977 | 95 | 1977 |
| Effect of interfaces on quantum confinement in Ge dots grown on Si surfaces with a SiO2 coverage AA Shklyaev, M Ichikawa Surface science 514 (1-3), 19-26, 2002 | 80 | 2002 |
| Three-dimensional Si islands on Si (001) surfaces AA Shklyaev, M Ichikawa Physical Review B 65 (4), 045307, 2001 | 70 | 2001 |
| LEED studies of vicinal surfaces of germanium BZ Olshanetsky, SM Repinsky, AA Shklyaev Surface Science 69 (1), 205-217, 1977 | 67 | 1977 |
| Visible photoluminescence of Ge dots embedded in matrices AA Shklyaev, M Ichikawa Applied physics letters 80 (8), 1432-1434, 2002 | 65 | 2002 |
| Ge islands on Si (111) at coverages near the transition from two-dimensional to three-dimensional growth AA Shklyaev, M Shibata, M Ichikawa Surface science 416 (1-2), 192-199, 1998 | 65 | 1998 |
| Optical anisotropy of oxidized Si (001) surfaces and its oscillation in the layer-by-layer oxidation process T Yasuda, S Yamasaki, M Nishizawa, N Miyata, A Shklyaev, M Ichikawa, ... Physical Review Letters 87 (3), 037403, 2001 | 60 | 2001 |
| Local structure of Ge nanoislands on Si(111) surfaces with a coverage AV Kolobov, AA Shklyaev, H Oyanagi, P Fons, S Yamasaki, M Ichikawa Applied Physics Letters 78 (17), 2563-2565, 2001 | 60 | 2001 |
| Nanometer-scale germanium islands on Si (111) surface windows formed in an ultrathin silicon dioxide film AA Shklyaev, M Shibata, M Ichikawa Applied physics letters 72 (3), 320-322, 1998 | 49 | 1998 |
| Instability of two-dimensional layers in the Stranski-Krastanov growth mode of Ge on Si (111) AA Shklyaev, M Shibata, M Ichikawa Physical Review B 58 (23), 15647, 1998 | 48 | 1998 |
| Surface morphology of Ge layers epitaxially grown on bare and oxidized Si (001) and Si (111) substrates AA Shklyaev, KN Romanyuk, SS Kosolobov Surface science 625, 50-56, 2014 | 37 | 2014 |
| Branching of Critical Conditions for Si(111)-( ) Oxidation AA Shklyaev, T Suzuki Physical review letters 75 (2), 272, 1995 | 35 | 1995 |
| Photoluminescence of Si layers grown on oxidized Si surfaces AA Shklyaev, Y Nakamura, M Ichikawa Journal of applied physics 101 (3), 2007 | 34 | 2007 |
| Raman and photoluminescence spectroscopy of SiGe layer evolution on Si (100) induced by dewetting AA Shklyaev, VA Volodin, M Stoffel, H Rinnert, M Vergnat Journal of Applied Physics 123 (1), 2018 | 32 | 2018 |
| Properties of three-dimensional structures prepared by Ge dewetting from Si (111) at high temperatures A Shklyaev, L Bolotov, V Poborchii, T Tada Journal of Applied Physics 117 (20), 2015 | 31 | 2015 |
| Photoluminescence of Ge∕ Si structures grown on oxidized Si surfaces AA Shklyaev, S Nobuki, S Uchida, Y Nakamura, M Ichikawa Applied Physics Letters 88 (12), 2006 | 30 | 2006 |
