| Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ... Applied Physics Letters 109 (21), 2016 | 374 | 2016 |
| -Ga2O3 MOSFETs for Radio Frequency Operation AJ Green, KD Chabak, M Baldini, N Moser, R Gilbert, RC Fitch, G Wagner, ... IEEE Electron Device Letters 38 (6), 790-793, 2017 | 302 | 2017 |
| Recessed-Gate Enhancement-Mode -Ga2O3 MOSFETs KD Chabak, JP McCandless, NA Moser, AJ Green, K Mahalingam, ... IEEE Electron device letters 39 (1), 67-70, 2017 | 222 | 2017 |
| Ge-Doped -Ga2O3 MOSFETs N Moser, J McCandless, A Crespo, K Leedy, A Green, A Neal, S Mou, ... IEEE Electron Device Letters 38 (6), 775-778, 2017 | 197 | 2017 |
| Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition KD Leedy, KD Chabak, V Vasilyev, DC Look, JJ Boeckl, JL Brown, ... Applied Physics Letters 111 (1), 2017 | 179 | 2017 |
| High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ... Applied Physics Letters 110 (14), 2017 | 90 | 2017 |
| Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy P Vogt, FVE Hensling, K Azizie, CS Chang, D Turner, J Park, ... Apl Materials 9 (3), 2021 | 53 | 2021 |
| Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 38 | 2021 |
| Toward realization of Ga2O3for power electronics applications G Jessen, K Chabak, A Green, J McCandless, S Tetlak, K Leedy, R Fitch, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 34 | 2017 |
| Significantly Reduced Thermal Conductivity in Beta-(Al0. 1Ga0. 9) 2O3/Ga2O3 Superlattices Z Cheng, N Tanen, C Chang, J Shi, J McCandless, D Muller, D Jena, ... Applied Physics Letters 115 (092105), 2019 | 28 | 2019 |
| Gate-recessed, laterally-scaled β-Ga2O3MOSFETs with high-voltage enhancement-mode operation K Chabak, A Green, N Moser, S Tetlak, J McCandless, K Leedy, R Fitch, ... 2017 75th Annual Device Research Conference (DRC), 1-2, 2017 | 27 | 2017 |
| Controlled Si doping of β-Ga2O3 by molecular beam epitaxy JP McCandless, V Protasenko, BW Morell, E Steinbrunner, AT Neal, ... Applied Physics Letters 121 (7), 2022 | 17 | 2022 |
| Silicon-doped β-Ga2O3 films grown at 1 µm/h by suboxide molecular-beam epitaxy K Azizie, FVE Hensling, CA Gorsak, Y Kim, NA Pieczulewski, DM Dryden, ... APL materials 11 (4), 2023 | 16 | 2023 |
| Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide-catalyzed epitaxy P Vogt, FVE Hensling, K Azizie, JP McCandless, J Park, K DeLello, ... Physical Review Applied 17 (3), 034021, 2022 | 11 | 2022 |
| Intra-and inter-conduction band optical absorption processes in β-Ga2O3 A Singh, O Koksal, N Tanen, J McCandless, D Jena, HG Xing, H Peelaers, ... Applied Physics Letters 117 (7), 2020 | 11 | 2020 |
| Gallium oxide technologies and applications G Jessen, K Chabak, A Green, N Moser, J McCandless, K Leedy, ... 2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2017 | 10 | 2017 |
| Ultrafast dynamics of gallium vacancy charge states in A Singh, O Koksal, N Tanen, J McCandless, D Jena, HG Xing, H Peelaers, ... Physical Review Research 3 (2), 023154, 2021 | 8 | 2021 |
| Growth of α-Ga2O3 on α-Al2O3 by conventional molecular-beam epitaxy and metal–oxide-catalyzed epitaxy JP McCandless, D Rowe, N Pieczulewski, V Protasenko, M Alonso-Orts, ... Japanese Journal of Applied Physics 62 (SF), SF1013, 2023 | 4 | 2023 |
| Heterogeneous integration of low-temperature metal-oxide TFTs ML Schuette, AJ Green, KD Leedy, JP McCandless, GH Jessen Oxide-based Materials and Devices VIII 10105, 167-173, 2017 | 4 | 2017 |
| Recent Progress of B-Ga2O3 MOSFETs for Power Electronic Applications AJ Green, KD Chabak, E Heller, JP McCandless, NA Moser, RC Fitch, ... Gen 25, 50, 2016 | 3 | 2016 |
Kevin LeedyAir Force Research LaboratoryVerified email at us.af.mil
