| 2.44 kV Ga2O3 vertical trench Schottky barrier diodes with very low reverse leakage current W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu, K Sasaki, A Kuramata, ... 2018 IEEE International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2018 | 103 | 2018 |
| Reduction in edge dislocation density in corundum-structured α-Ga2O3 layers on sapphire substrates with quasi-graded α-(Al, Ga) 2O3 buffer layers R Jinno, T Uchida, K Kaneko, S Fujita Applied Physics Express 9 (7), 071101, 2016 | 87 | 2016 |
| Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire R Jinno, CS Chang, T Onuma, Y Cho, ST Ho, D Rowe, MC Cao, K Lee, ... Science Advances 7 (2), eabd5891, 2021 | 86 | 2021 |
| Evaluation of band alignment of α-Ga2O3/α-(AlxGa1− x) 2O3 heterostructures by X-ray photoelectron spectroscopy T Uchida, R Jinno, S Takemoto, K Kaneko, S Fujita Japanese Journal of Applied Physics 57 (4), 040314, 2018 | 63 | 2018 |
| 1.6 kV Vertical Ga2O3 FinFETs With Source-Connected Field Plates and Normally-off Operation Z Hu, K Nomoto, W Li, R Jinno, T Nakamura, D Jena, H Xing 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 48 | 2019 |
| Control of Crystal Structure of Ga2O3 on Sapphire Substrate by Introduction of α‐(AlxGa1−x)2O3 Buffer Layer R Jinno, T Uchida, K Kaneko, S Fujita physica status solidi (b) 255 (4), 1700326, 2018 | 47 | 2018 |
| Thermal stability of epitaxial α-Ga2O3 and (Al, Ga) 2O3 layers on m-plane sapphire JP McCandless, CS Chang, K Nomoto, J Casamento, V Protasenko, ... Applied Physics Letters 119 (6), 2021 | 38 | 2021 |
| 2.44 kV Ga W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, TQ Tu IEDM Tech. Dig, 8.5, 2018 | 37 | 2018 |
| Growth of rocksalt-structured MgxZn1− xO (x> 0.5) films on MgO substrates and their deep-ultraviolet luminescence K Kaneko, T Onuma, K Tsumura, T Uchida, R Jinno, T Yamaguchi, ... Applied Physics Express 9 (11), 111102, 2016 | 33 | 2016 |
| Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD R Jinno, K Kaneko, S Fujita AIP Advances 10 (11), 2020 | 32 | 2020 |
| Enhancement of epitaxial lateral overgrowth in the mist chemical vapor deposition of α-Ga2O3 by using a-plane sapphire substrate R Jinno, N Yoshimura, K Kaneko, S Fujita Japanese Journal of Applied Physics 58 (12), 120912, 2019 | 30 | 2019 |
| Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition K Kaneko, K Uno, R Jinno, S Fujita Journal of Applied Physics 131 (9), 2022 | 29 | 2022 |
| Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3 M Hilfiker, R Korlacki, R Jinno, Y Cho, HG Xing, D Jena, U Kilic, M Stokey, ... Applied Physics Letters 118 (6), 2021 | 26 | 2021 |
| High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1− x) 2O3 (≤ x≤ 1) M Hilfiker, U Kilic, M Stokey, R Jinno, Y Cho, HG Xing, D Jena, R Korlacki, ... Applied Physics Letters 119 (9), 2021 | 17 | 2021 |
| Infrared dielectric functions and Brillouin zone center phonons of compared to - M Stokey, R Korlacki, M Hilfiker, S Knight, S Richter, V Darakchieva, ... Physical Review Materials 6 (1), 014601, 2022 | 13 | 2022 |
| Thermal stability of α-(Al x Ga1–x) 2O3 films grown on c-plane sapphire substrates with an Al composition up to 90% R Jinno, K Kaneko, S Fujita Japanese Journal of Applied Physics 60 (SB), SBBD13, 2021 | 13 | 2021 |
| Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1− x) 2O3 (≤ x≤ 1) M Hilfiker, U Kilic, M Stokey, R Jinno, Y Cho, HG Xing, D Jena, R Korlacki, ... Applied Physics Letters 121 (5), 2022 | 8 | 2022 |
| Infrared-active phonon modes and static dielectric constants in α-(AlxGa1− x) 2O3 (0.18≤ x≤ 0.54) alloys M Stokey, T Gramer, R Korlacki, S Knight, S Richter, R Jinno, Y Cho, ... Applied Physics Letters 120 (11), 2022 | 5 | 2022 |
| 31st International Symposium on Power Semiconductor Devices and ICs ZY Hu, K Nomoto, WS Li, R Jinno, T Nakamura, D Jena, HL Xing IEEE, New York, 2019 | 4 | 2019 |
| 2.44 kV Ga 2 O 3 vertical trench Schottky barrier diodes with very low reverse leakage current,” IEDM Tech W Li, Z Hu, K Nomoto, R Jinno, Z Zhang, T Tu, K Sasaki, A Kuramata, ... Dig 8, 1-8.5, 2018 | 3 | 2018 |
