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Byeongyong Go
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A 1.1 V 16Gb DDR5 DRAM with Probabilistic-Aggressor Tracking, Refresh-Management Functionality, Per-Row Hammer Tracking, a Multi-Step Precharge, and Core-Bias Modulation for …
W Kim, C Jung, S Yoo, D Hong, J Hwang, J Yoon, O Jung, J Choi, S Hyun, ...
2023 IEEE International Solid-State Circuits Conference (ISSCC), 1-3, 2023
152023
Memory device for performing smart refresh operation and memory system including the same
BY GO, W Kim, H Chung, SH Kim, OH Yoonna, CM Jung
US Patent App. 17/731,375, 2023
12023
Memory device for performing smart refresh operation and memory system including the same
BY GO, W Kim, OH Yoonna
US Patent App. 17/591,982, 2023
12023
Integrated circuit and memory device including sampling circuit
W Kim, BY GO, CM Jung, OH Yoonna
US Patent App. 18/488,040, 2024
2024
Integrated circuit and memory device including sampling circuit
JS Noh, BY Go, SW Yoon, NG Joo
US Patent App. 17/993,635, 2023
2023
Integrated circuit and memory device including sampling circuit
W Kim, BY GO, CM Jung, OH Yoonna
US Patent App. 17/703,586, 2023
2023
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