| Method for forming metal chalcogenide thin films on a semiconductor device F Tang, ME Givens, JH Woodruff, Q Xie, JW Maes US Patent 9,711,396, 2017 | 381 | 2017 |
| Source/drain performance through conformal solid state doping Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart US Patent 10,032,628, 2018 | 366 | 2018 |
| Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures JH Woodruff, B Sharma US Patent 10,770,286, 2020 | 317 | 2020 |
| Methods for forming a silicon nitride film on a substrate and related semiconductor device structures JH Woodruff, B Sharma, EJ Shero US Patent 10,892,156, 2021 | 313 | 2021 |
| Source/drain performance through conformal solid state doping Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart US Patent 10,665,452, 2020 | 287 | 2020 |
| Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal JH Woodruff, JB Ratchford, IA Goldthorpe, PC McIntyre, Chidsey Nano letters 7 (6), 1637-1642, 2007 | 190 | 2007 |
| Nature of germanium nanowire heteroepitaxy on silicon substrates H Jagannathan, M Deal, Y Nishi, J Woodruff, C Chidsey, PC McIntyre Journal of Applied Physics 100 (2), 2006 | 149 | 2006 |
| Device characteristics of a 17.1% efficient solar cell deposited by a non-vacuum printing method on flexible foil G Brown, P Stone, J Woodruff, B Cardozo, D Jackrel 2012 38th IEEE Photovoltaic Specialists Conference, 003230-003233, 2012 | 54 | 2012 |
| Multi-nary group IB and VIA based semiconductor DB Jackrel, K Dickey, K Pollock, J Woodruff, P Stone, G Brown US Patent 8,889,469, 2014 | 52 | 2014 |
| Impact of the precursor chemistry and process conditions on the cell-to-cell variability in 1T-1R based HfO2 RRAM devices A Grossi, E Perez, C Zambelli, P Olivo, E Miranda, R Roelofs, J Woodruff, ... Scientific reports 8 (1), 11160, 2018 | 40 | 2018 |
| Low cost solar cells formed using a chalcogenization rate modifier DB Jackrel, K Dickey, J Woodruff US Patent App. 12/980,276, 2011 | 40 | 2011 |
| Solar cell absorber layer formed from equilibrium precursor (s) J Woodruff, JKJ Van Duren, MR Robinson, BM Sager US Patent App. 12/706,709, 2010 | 40 | 2010 |
| Self-Catalyzed, Low-Temperature Atomic Layer Deposition of Ruthenium Metal Using Zero-Valent Ru(DMBD)(CO)3 and Water Z Gao, D Le, A Khaniya, CL Dezelah, J Woodruff, RK Kanjolia, WE Kaden, ... Chemistry of Materials 31 (4), 1304-1317, 2019 | 27 | 2019 |
| Multi-nary group IB and VIA based semiconductor DB Jackrel, K Dickey, K Pollock, J Woodruff, P Stone, G Brown US Patent 8,729,543, 2014 | 24 | 2014 |
| Multi-nary group IB and VIA based semiconductor DB Jackrel, K Dickey, K Pollock, J Woodruff, P Stone, G Brown US Patent 8,729,543, 2014 | 24 | 2014 |
| Metal seed layer for solar cell conductive contact RH Sewell, JH Woodruff US Patent 9,312,042, 2016 | 19 | 2016 |
| Method of making a resistive random access memory Q Xie, JW Maes, T Blomberg, M Tuominen, S Haukka, R Roelofs, ... US Patent 9,520,562, 2016 | 16 | 2016 |
| The role of oxide formation on insulating versus metallic substrates during Co and Ru selective ALD S Wolf, M Breeden, S Ueda, J Woodruff, M Moinpour, R Kanjolia, ... Applied Surface Science 510, 144804, 2020 | 14 | 2020 |
| Methods of forming metal silicides JH Woodruff US Patent 9,607,842, 2017 | 13 | 2017 |
| Tris (dimethylamido) aluminum (III) and N2H4: Ideal precursors for the low-temperature deposition of large grain, oriented c-axis AlN on Si via atomic layer annealing ST Ueda, A McLeod, D Alvarez, D Moser, R Kanjolia, M Moinpour, ... Applied Surface Science 554, 149656, 2021 | 10 | 2021 |
