フォロー
Maria Anagnosti
Maria Anagnosti
確認したメール アドレス: infinera.com
タイトル
引用先
引用先
Foundry development of system-on-chip InP-based photonic integrated circuits
GE Hoefler, Y Zhou, M Anagnosti, A Bhardwaj, P Abolghasem, A James, ...
IEEE Journal of Selected Topics in Quantum Electronics 25 (5), 1-17, 2019
412019
1.00 (0.88) Tb/s per wave capable coherent multi-channel transmitter (receiver) InP-based PICs with hybrid integrated SiGe electronics
RW Going, M Lauermann, R Maher, HS Tsai, A Hosseini, M Lu, N Kim, ...
IEEE Journal of Quantum Electronics 54 (4), 1-10, 2018
362018
Optimized high speed UTC photodiode for 100 Gbit/s applications
M Anagnosti, C Caillaud, F Blache, F Jorge, P Angelini, JF Paret, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 29-35, 2014
272014
Photonic integrated circuit package
PW Evans, JW Osenbach, FA Kish, J Zhang, MI Olmedo, M Anagnosti
US Patent 10,026,723, 2018
242018
Record gain x bandwidth (6.1 THz) monolithically integrated SOA-UTC photoreceiver for 100-Gbit/s applications
M Anagnosti, C Caillaud, JF Paret, F Pommereau, G Glastre, F Blache, ...
Journal of Lightwave Technology 33 (6), 1186-1190, 2014
242014
Photonic integrated circuit package
PW Evans, JW Osenbach, FA Kish Jr, J Zhang, MI Olmedo, M Anagnosti
US Patent 10,290,619, 2019
142019
Record 2.84 THz gain× bandwidth of monolithic O-Band SOA-UTe receiver for future optical networks
C Caillaud, M Anagnosti, JF Paret, F Pommereau, K Mekhazni, F Blache, ...
2018 European Conference on Optical Communication (ECOC), 1-3, 2018
112018
Photonic integrated circuit package
PW Evans, JW Osenbach, FA Kish Jr, J Zhang, MI Olmedo, M Anagnosti
US Patent 10,037,982, 2018
102018
Heterogeneously integrated InP widely tunable laser and SiN microring resonator for integrated comb generation
KA McKinzie, C Wang, A Al Noman, DL Mathine, K Han, DE Leaird, ...
CLEO: Science and Innovations, SM1B. 1, 2018
42018
Mixture formation of ErxYb2-xSi2O7 and ErxYb2-xO3 on Si for broadening the C-band in an optical amplifier
H Omi, Y Abe, M Anagnosti, T Tawara
AIP Advances 3 (4), 2013
42013
Design and fabrication of a photonic integrated circuit comprising a semi-conductor optical amplifier and a high speed photodiode (SOA-UTC) for> 100 Gbit/s applications
M Anagnosti
Evry, Institut national des télécommunications, 2015
32015
High performance monolithically integrated SOA-UTC photoreceiver for 100Gbit/s applications
M Anagnosti, C Caillaud, G Glastre, JF Paret, D Lanteri, M Achouche
26th International Conference on Indium Phosphide and Related Materials …, 2014
32014
InP integrated pulse shaper with 48 channel, 50 GHz spacing amplitude and phase control
KA McKinzie, DE Leaird, D Mathine, M Anagnosti, GE Hoefler, Z Kong, ...
2017 IEEE Photonics Conference (IPC), 197-198, 2017
12017
Simultaneous light emissions from erbium-thulium silicates and oxides on silicon in the second and third telecommunications bands
M Anagnosti, H Omi, T Tawara
Optical Materials Express 4 (9), 1747-1755, 2014
12014
2019 Index IEEE Journal of Selected Topics in Quantum Electronics Vol. 25
T Aalto, H Abediasl, AM Abobaker, P Abolghasem, N Abrams, P Absil, ...
IEEE Journal of Selected Topics in Quantum Electronics 25 (6), 2019
2019
2014 Index IEEE Journal of Selected Topics in Quantum Electronics Vol. 20
MK Abd-Rahman, MA Abdelalim, KM Abramski, A Accard, F Acerbi, ...
IEEE Journal of Selected Topics in Quantum Electronics 20 (6), 9900354, 2014
2014
Mixture formation of Er {sub x} Yb {sub 2-x} Si {sub 2} O {sub 7} and Er {sub x} Yb {sub 2-x} O {sub 3} on Si for broadening the C-band in an optical amplifier
H Omi, T Tawara, Y Abe, M Anagnosti
AIP Advances 3 (4), 2013
2013
Mixture formaion of ErxYb2-xSi2O7 and ErxYb2-xO3 for broadening the C-band in an optical amplifier on Si
H Omi, Y Abe, M Anagnosti, T Tawara
Tb/s-Class InP-Based System-On-Chip Photonic ICs
GE Hoefler, R Going, R Maher, M Lauermann, A Hosseini, M Lu, N Kim, ...
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