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Co-authors
- Stanislav SolovievIdeal Semiconductor Devices, Inc.Verified email at idealsemi.com
- Larry RowlandAymont Technology, Inc.Verified email at ieee.org
- Edward B StokesCharlotteVerified email at uncc.edu
- Alexey VertVerified email at sematech.org
- Xianan Cao (X. A. Cao)West Virginia UniversityVerified email at mix.wvu.edu
- Manijeh RazeghiNorthwestern UniversityVerified email at eecs.northwestern.edu
- Patrick KungUniversity of AlabamaVerified email at eng.ua.edu
- Ho-Young ChaHongik universityVerified email at hongik.ac.kr
- Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgVerified email at inatech.uni-freiburg.de
- Majdeddin Alidr MicroelectronicsVerified email at albaath-univ.edu.sy
- Avinash KashyapRenesas ElectronicsVerified email at renesas.com
- JPR DavidUniversity of SheffieldVerified email at sheffield.ac.uk
- Reza GhandiPrincipal Engineer at GE ResearchVerified email at ge.com
- Abasifreke EbongProfessor of Electrical and Computer Engineering, UNC CharlotteVerified email at uncc.edu
- Jo Shien NgProfessor of Semiconductor Devices, University of SheffieldVerified email at sheffield.ac.uk
- Ljubisa D. StevanovicCTO of Silicon Carbide Works at GE Global ResearchVerified email at ge.com
- Radislav A. PotyrailoGE Global ResearchVerified email at crd.ge.com
- Liangchun YuGEVerified email at ge.com
- Liang YinGeneral Electric Global ResearchVerified email at ge.com
- Yang Sui, Ph.D.Keter Research LLCVerified email at keterresearch.com