| Vertical MoS2 transistors with sub-1-nm gate lengths F Wu, H Tian, Y Shen, Z Hou, J Ren, G Gou, Y Sun, Y Yang, TL Ren Nature 603 (7900), 259-264, 2022 | 298 | 2022 |
| The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms Y Shen, Z Dong, Y Sun, H Guo, F Wu, X Li, J Tang, J Liu, X Wu, H Tian, ... Advanced Materials 34 (48), 2201916, 2022 | 41 | 2022 |
| Impact of geometry, doping, temperature, and boundary conductivity on thermal characteristics of 14-nm bulk and SOI FinFETs J Sun, X Li, Y Sun, Y Shi IEEE Transactions on Device and Materials Reliability 20 (1), 119-127, 2020 | 33 | 2020 |
| A vertical combo spacer to optimize electrothermal characteristics of 7-nm nanosheet gate-all-around transistor R Liu, X Li, Y Sun, Y Shi IEEE Transactions on Electron Devices 67 (6), 2249-2254, 2020 | 32 | 2020 |
| Vertically stacked nanosheets tree-type reconfigurable transistor with improved ON-current Y Sun, X Li, Z Liu, Y Liu, X Li, Y Shi IEEE Transactions on Electron Devices 69 (1), 370-374, 2021 | 22 | 2021 |
| Impact of process fluctuations on reconfigurable silicon nanowire transistor X Li, X Yang, Z Zhang, T Wang, Y Sun, Z Liu, X Li, Y Shi, J Xu IEEE Transactions on Electron Devices 68 (2), 885-891, 2021 | 19 | 2021 |
| Novel reconfigurable field-effect transistor with asymmetric spacer engineering at drain side Y Yao, Y Sun, X Li, Y Shi, Z Liu IEEE Transactions on Electron Devices 67 (2), 751-757, 2020 | 19 | 2020 |
| Irradiation effects of 25 MeV silicon ions on SiGe heterojunction bipolar transistors YB Sun, J Fu, J Xu, YD Wang, W Zhou, W Zhang, J Cui, GQ Li, ZH Liu Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2013 | 18 | 2013 |
| The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors YB Sun, J Fu, J Xu, YD Wang, J Yang, W Zhou, W Zhang, J Cui, GQ Li, ... Radiation Effects and Defects in Solids 168 (4), 253-263, 2013 | 17 | 2013 |
| Electronic assessment of novel arch-shaped asymmetrical reconfigurable field-effect transistor X Li, Y Sun, X Li, Y Shi, Z Liu IEEE Transactions on Electron Devices 67 (4), 1894-1901, 2020 | 15 | 2020 |
| Impact of process variation on nanosheet gate-all-around complementary FET (CFET) X Yang, X Li, Z Liu, Y Sun, Y Liu, X Li, Y Shi IEEE Transactions on Electron Devices 69 (7), 4029-4036, 2022 | 14 | 2022 |
| Investigation of total ionizing dose effects in 4H–SiC power MOSFET under gamma ray radiation Y Sun, X Wan, Z Liu, H Jin, J Yan, X Li, Y Shi Radiation Physics and Chemistry 197, 110219, 2022 | 13 | 2022 |
| Novel tri-independent-gate FinFET for multi-current modes control C Liu, F Zheng, Y Sun, X Li, Y Shi Superlattices and Microstructures 109, 374-381, 2017 | 13 | 2017 |
| Linear and resolution adjusted on-chip aging detection of NBTI degradation X Li, J Qing, Y Sun, Y Zeng, Y Shi, Y Wang IEEE Transactions on Device and Materials Reliability 18 (3), 383-390, 2018 | 12 | 2018 |
| Evaluation of lattice dynamics, infrared optical properties and visible emissions of hexagonal GeO 2 films prepared by liquid phase deposition Y Sun, W Xu, X Fu, Z Sun, J Wang, J Zhang, D Rosenbach, R Qi, K Jiang, ... Journal of Materials Chemistry C 5 (48), 12792-12799, 2017 | 12 | 2017 |
| A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor YB Sun, J Fu, J Xu, YD Wang, W Zhou, W Zhang, J Cui, GQ Li, ZH Liu, ... Chinese Physics B 22 (5), 056103, 2013 | 12 | 2013 |
| Design technology co-optimization for 3 nm gate-all-around nanosheet FETs M Wang, Y Sun, X Li, Y Shi, S Hu, E Shang, S Chen 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit …, 2020 | 9 | 2020 |
| Experimental study of bias dependence of pulsed laser-induced single-event transient in SiGe HBT Y Sun, J Fu, Y Wang, W Zhou, Z Liu, X Li, Y Shi Microelectronics Reliability 65, 41-46, 2016 | 9 | 2016 |
| An improved small-signal model for SiGe HBT under off-state, derived from distributed network and corresponding model parameter extraction Y Sun, J Fu, J Yang, J Xu, Y Wang, J Cui, W Zhou, Z Wei, Z Liu IEEE Transactions on Microwave Theory and Techniques 63 (10), 3131-3141, 2015 | 9 | 2015 |
| Novel 3-D fin-RFET with dual-doped source/drain to improve ON-state current R Zhang, Y Yang, Y Sun, Z Liu, Y Liu, X Li, Y Shi IEEE Transactions on Electron Devices 69 (12), 6569-6575, 2022 | 8 | 2022 |
