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Miika Mattinen
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Methods and apparatus for depositing a chalcogenide film and structures including the film
M Mattinen, M Ritala, M Leskelä
US Patent App. 17/007,221, 2021
2102021
Atomic Layer Deposition of Crystalline MoS2 Thin Films: New Molybdenum Precursor for Low‐Temperature Film Growth
M Mattinen, T Hatanpää, T Sarnet, K Mizohata, K Meinander, PJ King, ...
Advanced Materials Interfaces 4 (18), 1700123, 2017
1322017
Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronics
M Mattinen, G Popov, M Vehkamäki, PJ King, K Mizohata, P Jalkanen, ...
Chemistry of Materials 31 (15), 5713-5724, 2019
882019
Atomic layer deposition of optoelectronic materials
M Leskelä, M Mattinen, M Ritala
Journal of Vacuum Science & Technology B 37 (3), 2019
742019
Atomic layer deposition of rhenium disulfide
J Hämäläinen, M Mattinen, K Mizohata, K Meinander, M Vehkamäki, ...
Advanced Materials 30 (24), 1703622, 2018
732018
Atomic Layer Deposition of PbI2 Thin Films
G Popov, M Mattinen, T Hatanpää, M Vehkamäki, M Kemell, ...
Chemistry of Materials 31 (3), 1101-1109, 2019
612019
Low‐Temperature Wafer‐Scale Deposition of Continuous 2D SnS2 Films
M Mattinen, PJ King, L Khriachtchev, K Meinander, JT Gibbon, ...
Small 14 (21), 1800547, 2018
602018
Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing
M Mattinen, PJ King, L Khriachtchev, MJ Heikkilä, B Fleming, ...
Materials today chemistry 9, 17-27, 2018
572018
Scalable Route to the Fabrication of CH3NH3PbI3 Perovskite Thin Films by Electrodeposition and Vapor Conversion
G Popov, M Mattinen, ML Kemell, M Ritala, M Leskelä
ACS omega 1 (6), 1296-1306, 2016
522016
Atomic layer deposition of 2D metal dichalcogenides for electronics, catalysis, energy storage, and beyond
M Mattinen, M Leskelä, M Ritala
Advanced Materials Interfaces 8 (6), 2001677, 2021
502021
Atomic Layer Deposition of Photoconductive Cu2O Thin Films
T Iivonen, MJ Heikkilä, G Popov, HE Nieminen, M Kaipio, M Kemell, ...
ACS omega 4 (6), 11205-11214, 2019
432019
Nucleation and conformality of iridium and iridium oxide thin films grown by atomic layer deposition
M Mattinen, J Hamalainen, F Gao, P Jalkanen, K Mizohata, J Raisanen, ...
Langmuir 32 (41), 10559-10569, 2016
412016
Diamine adduct of cobalt (II) chloride as a precursor for atomic layer deposition of stoichiometric cobalt (II) oxide and reduction thereof to cobalt metal thin films
K Väyrynen, T Hatanpää, M Mattinen, M Heikkilä, K Mizohata, ...
Chemistry of Materials 30 (10), 3499-3507, 2018
382018
Atomic layer deposition of molybdenum and tungsten oxide thin films using heteroleptic imido-amidinato precursors: process development, film characterization, and gas sensing …
M Mattinen, JL Wree, N Stegmann, E Ciftyurek, ME Achhab, PJ King, ...
Chemistry of Materials 30 (23), 8690-8701, 2018
372018
Atomic layer deposition of iridium thin films using sequential oxygen and hydrogen pulses
M Mattinen, J Hämäläinen, M Vehkamäki, MJ Heikkilä, ...
The Journal of Physical Chemistry C 120 (28), 15235-15243, 2016
332016
Atomic Layer Deposition and Characterization of Bi2Te3 Thin Films
T Sarnet, T Hatanpää, E Puukilainen, M Mattinen, M Vehkamäki, ...
The Journal of Physical Chemistry A 119 (11), 2298-2306, 2015
332015
Rhenium metal and rhenium nitride thin films grown by atomic layer deposition
J Hämäläinen, K Mizohata, K Meinander, M Mattinen, M Vehkamäki, ...
Angewandte Chemie 130 (44), 14746-14750, 2018
302018
Atomic layer deposition of tin oxide thin films from bis [bis (trimethylsilyl) amino] tin (II) with ozone and water
J Tupala, M Kemell, M Mattinen, K Meinander, S Seppälä, T Hatanpää, ...
Journal of Vacuum Science & Technology A 35 (4), 2017
282017
Atomic layer deposition of PbS thin films at low temperatures
G Popov, G Bačić, M Mattinen, T Manner, H Lindström, H Seppänen, ...
Chemistry of Materials 32 (19), 8216-8228, 2020
262020
Low-temperature atomic layer deposition of copper (II) oxide thin films
T Iivonen, J Hämäläinen, B Marchand, K Mizohata, M Mattinen, G Popov, ...
Journal of Vacuum Science & Technology A 34 (1), 2016
232016
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