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Karim Ben Saddik
Karim Ben Saddik
Laboratoire d'analyse et d'architecture des systèmes - CNRS
Verified email at laas.fr
Title
Cited by
Cited by
Year
Growth of GaP1− x− yAsyNx on Si substrates by chemical beam epitaxy
K Ben Saddik, AF Braña, N López, W Walukiewicz, BJ García
Journal of Applied Physics 126 (10), 2019
72019
A growth diagram for chemical beam epitaxy of GaP1− xNx alloys on nominally (001)-oriented GaP-on-Si substrates
K Ben Saddik, BJ García, S Fernández-Garrido
APL Materials 9 (12), 2021
32021
Growth of silicon-and carbon-doped GaAs by chemical beam epitaxy using H2-diluted DTBSi and CBr4 precursors
KB Saddik, AF Brana, N Lopez, BJ García, S Fernández-Garrido
Journal of Crystal Growth 571, 126242, 2021
32021
Growth modes and chemical-phase separation in GaP1− xNx layers grown by chemical beam epitaxy on GaP/Si (001)
K Ben Saddik, S Fernández-Garrido, R Volkov, J Grandal, N Borgardt, ...
Journal of Applied Physics 134 (17), 2023
12023
Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si
P Mouriño, L Mercadé, MS Lozano, R Resta, A Griol, KB Saddik, ...
arXiv preprint arXiv:2403.19230, 2024
2024
Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates
KB Saddik, S Fernandez-Garrido, R Volkov, J Grandal, N Borgardt, ...
arXiv preprint arXiv:2302.01147, 2023
2023
Luminescence properties of GaP1−xNx alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy
KB Saddik, P Álamo, J Lähnemann, R Volkov, NI Borgardt, T Flissikowski, ...
2022 Compound Semiconductor Week (CSW), 1-2, 2022
2022
H-diluted precursors for GaAs doping in chemical beam epitaxy
KB Saddik, AF Braña, N López, BJ García, S Fernández-Garrido
arXiv preprint arXiv:2102.13132, 2021
2021
On the Absorption Coefficient of Gap1-Xnx Layers and its Potential Application for Silicon Photovoltaics
K Ben Saddik, MJ Hernández, MÁ Pampillón, M Cervera, BJ García
María Jesús and Pampillón, María Ángela and Cervera, Manuel and García …, 0
GaPAsN based short period superlattices for the integration of III-V solar cells on silicon
KB Saddik, R Volkov, NI Borgardt, MJ Hernández, S Fernández-Garrido, ...
Chemical Beam Epitaxy growth of phosphide layers on Silicon
KB Saddik, A Diaz-Lobo, S Fernández-Garrido, MJ Hernández, AF Braña, ...
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Articles 1–11