| ZnO1–x Nanorod Arrays/ZnO Thin Film Bilayer Structure: From Homojunction Diode and High-Performance Memristor to Complementary 1D1R Application CH Huang, JS Huang, SM Lin, WY Chang, JH He, YL Chueh Acs Nano 6 (9), 8407-8414, 2012 | 155 | 2012 |
| Manipulated transformation of filamentary and homogeneous resistive switching on ZnO thin film memristor with controllable multistate CH Huang, JS Huang, CC Lai, HW Huang, SJ Lin, YL Chueh ACS applied materials & interfaces 5 (13), 6017-6023, 2013 | 149 | 2013 |
| Single CuO x nanowire memristor: forming-free resistive switching behavior KD Liang*, CH Huang*, CC Lai, JS Huang, HW Tsai, YC Wang, YC Shih, ... ACS applied materials & interfaces 6 (19), 16537-16544, 2014 | 142 | 2014 |
| Self-Selecting Resistive Switching Scheme Using TiO2 Nanorod Arrays CH Huang, TS Chou, JS Huang, SM Lin, YL Chueh Scientific Reports 7 (1), 2066, 2017 | 53 | 2017 |
| Artificial Synapse Based on a 2D-SnO2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing CH Huang, H Chang, TY Yang, YC Wang, YL Chueh, K Nomura ACS Applied Materials & Interfaces 13 (44), 52822-52832, 2021 | 50 | 2021 |
| Experimental demonstration of single-mode topological valley-Hall lasing at telecommunication wavelength controlled by the degree of asymmetry W Noh, H Nasari, HM Kim, Q Le-Van, Z Jia, CH Huang, B Kanté Optics Letters 45 (15), 4108-4111, 2020 | 48 | 2020 |
| Vacuum-free liquid-metal-printed 2D indium–tin oxide thin-film transistor for oxide inverters Y Tang, CH Huang, K Nomura ACS nano 16 (2), 3280-3289, 2022 | 38 | 2022 |
| Resistive switching of Sn-doped In 2 O 3/HfO 2 core–shell nanowire: geometry architecture engineering for nonvolatile memory CH Huang, WC Chang, JS Huang, SM Lin, YL Chueh Nanoscale 9 (20), 6920-6928, 2017 | 32 | 2017 |
| Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors H Chang, CH Huang, K Matsuzaki, K Nomura ACS Applied Materials & Interfaces 12 (46), 51581-51588, 2020 | 28 | 2020 |
| Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering for High Performance and Low Energy Consumption Resistive Memory with … SM Lin, JS Huang, WC Chang, TC Hou, HW Huang, CH Huang, SJ Lin, ... ACS applied materials & interfaces 5 (16), 7831-7837, 2013 | 23 | 2013 |
| Threshold switching of non-stoichiometric CuO nanowire for selector application CH Huang, K Matsuzaki, K Nomura Applied Physics Letters 116 (2), 2020 | 22 | 2020 |
| Switching Mechanism behind the Device Operation Mode in SnO‐TFT AW Lee, Y Zhang, CH Huang, K Matsuzaki, K Nomura Advanced Electronic Materials 6 (12), 2000742, 2020 | 21 | 2020 |
| Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory TY Su, CH Huang, YC Shih, TH Wang, H Medina, JS Huang, HS Tsai, ... Journal of Materials Chemistry C 5 (25), 6319-6327, 2017 | 21 | 2017 |
| Tunable Multilevel Storage of Complementary Resistive Switching on Single-Step Formation of ZnO/ZnWOx Bilayer Structure via Interfacial Engineering SM Lin, JY Tseng, TY Su, YC Shih, JS Huang, CH Huang, SJ Lin, ... ACS Applied Materials & Interfaces 6 (20), 17686-17693, 2014 | 21 | 2014 |
| Atomically thin tin monoxide-based p-channel thin-film transistor and a low-power complementary inverter CH Huang, Y Tang, TY Yang, YL Chueh, K Nomura ACS Applied Materials & Interfaces 13 (44), 52783-52792, 2021 | 16 | 2021 |
| Low-Temperature Solution-Processed n-Channel SnO2 Thin-Film Transistors and High-Gain Zero-VGS-Load Inverter H Chang, CH Huang, K Nomura ACS Applied Electronic Materials 3 (11), 4943-4949, 2021 | 14 | 2021 |
| Resistive switching memory effects in p-type hydrogen-treated CuO nanowire CH Huang, Y Tang, K Matsuzaki, K Nomura Applied Physics Letters 117 (4), 2020 | 13 | 2020 |
| Reconfigurable Artificial Synapses with Excitatory and Inhibitory Response Enabled by an Ambipolar Oxide Thin-Film Transistor CH Huang, Y Zhang, K Nomura ACS Applied Materials & Interfaces 14 (19), 22252-22262, 2022 | 10 | 2022 |
| Voltage transfer characteristics of CMOS-like inverters for ambipolar SnO thin-film transistors Y Zhang, CH Huang, K Nomura IEEE Electron Device Letters 43 (1), 52-55, 2021 | 10 | 2021 |
| Resistive random-access memory YL Chueh, P Chung-Nan, YEN Wen-Chun US Patent App. 14/197,697, 2014 | 7 | 2014 |
