| Atomic control of the SrTiO3 crystal surface M Kawasaki, K Takahashi, T Maeda, R Tsuchiya, M Shinohara, ... Science 266 (5190), 1540-1542, 1994 | 1603 | 1994 |
| Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication M Yoshimoto, T Maeda, T Ohnishi, H Koinuma, O Ishiyama, M Shinohara, ... Applied Physics Letters 67 (18), 2615-2617, 1995 | 472 | 1995 |
| 1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density R Suzuki, N Taoka, M Yokoyama, S Lee, SH Kim, T Hoshii, T Yasuda, ... Applied Physics Letters 100 (13), 2012 | 191 | 2012 |
| Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs E Suzuki, K Ishii, S Kanemaru, T Maeda, T Tsutsumi, T Sekigawa, K Nagai, ... IEEE Transactions on Electron Devices 47 (2), 354-359, 2000 | 158 | 2000 |
| Room-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat α-alumina substrate K Matsumoto, Y Gotoh, T Maeda, JA Dagata, JS Harris Applied Physics Letters 76 (2), 239-241, 2000 | 158 | 2000 |
| High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain T Maeda, K Ikeda, S Nakaharai, T Tezuka, N Sugiyama, Y Moriyama, ... IEEE electron device letters 26 (2), 102-104, 2005 | 150 | 2005 |
| Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs S Takagi, T Mizuno, T Tezuka, N Sugiyama, T Numata, K Usuda, ... IEEE International Electron Devices Meeting 2003, 3.3. 1-3.3. 4, 2003 | 142 | 2003 |
| Topmost surface analysis of SrTiO3 (001) by coaxial impact‐collision ion scattering spectroscopy M Yoshimoto, T Maeda, K Shimozono, H Koinuma, M Shinohara, ... Applied physics letters 65 (25), 3197-3199, 1994 | 139 | 1994 |
| Room-temperature epitaxial growth of CeO2 thin films on Si (111) substrates for fabrication of sharp oxide/silicon interface M Yoshimoto, K Shimozono, T Maeda, T Ohnishi, M Kumagai, T Chikyow, ... Japanese journal of applied physics 34 (6A), L688, 1995 | 136 | 1995 |
| Gate dielectric formation and MIS interface characterization on Ge S Takagi, T Maeda, N Taoka, M Nishizawa, Y Morita, K Ikeda, ... Microelectronic engineering 84 (9-10), 2314-2319, 2007 | 133 | 2007 |
| Ge metal-insulator-semiconductor structures with Ge3N4 dielectrics by direct nitridation of Ge substrates T Maeda, T Yasuda, M Nishizawa, N Miyata, Y Morita, S Takagi Applied physics letters 85 (15), 3181-3183, 2004 | 119 | 2004 |
| Role of germanium nitride interfacial layers in HfO2/germanium nitride/germanium metal-insulator-semiconductor structures T Maeda, M Nishizawa, Y Morita, S Takagi Applied physics letters 90 (7), 2007 | 117 | 2007 |
| Pure germanium nitride formation by atomic nitrogen radicals for application to Ge metal-insulator-semiconductor structures T Maeda, T Yasuda, M Nishizawa, N Miyata, Y Morita, S Takagi Journal of applied physics 100 (1), 2006 | 84 | 2006 |
| Orientation-defined molecular layer epitaxy of α-Al2O3 thin films T Maeda, M Yoshimoto, T Ohnishi, GH Lee, H Koinuma Journal of crystal growth 177 (1-2), 95-101, 1997 | 78 | 1997 |
| Thin-body Ge-on-insulator p-channel MOSFETs with Pt germanide metal source/drain T Maeda, K Ikeda, S Nakaharai, T Tezuka, N Sugiyama, Y Moriyama, ... Thin Solid Films 508 (1-2), 346-350, 2006 | 75 | 2006 |
| Electrical properties of Si nanocrystals embedded in an ultrathin oxide T Maeda, E Suzuki, I Sakata, M Yamanaka, K Ishii Nanotechnology 10 (2), 127, 1999 | 75 | 1999 |
| Sulfur passivation of Ge (0 0 1) surfaces and its effects on Schottky barrier contact T Maeda, S Takagi, T Ohnishi, M Lippmaa Materials science in semiconductor processing 9 (4-5), 706-710, 2006 | 67 | 2006 |
| Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation N Taoka, M Yokoyama, SH Kim, R Suzuki, R Iida, S Lee, T Hoshii, ... 2011 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2011 | 61 | 2011 |
| Method for manufacturing self-matching transistor T Maeda US Patent 6,365,470, 2002 | 57 | 2002 |
| Effects of zirconium and oxygen on the oxidation of FeCrAl-ODS alloys under air and steam conditions up to 1500° C T Maeda, S Ukai, S Hayashi, N Oono, Y Shizukawa, K Sakamoto Journal of Nuclear Materials 516, 317-326, 2019 | 55 | 2019 |
Shinichi TakagiThe University of TokyoVerified email at ee.t.u-tokyo.ac.jp
