| Observation of discrete electronic states in a zero-dimensional semiconductor nanostructure MA Reed, JN Randall, RJ Aggarwal, RJ Matyi, TM Moore, AE Wetsel Physical review letters 60 (6), 535, 1988 | 1498 | 1988 |
| Extraordinary Photoresponse in Two-Dimensional In2Se3 Nanosheets RB Jacobs-Gedrim, M Shanmugam, N Jain, CA Durcan, MT Murphy, ... ACS nano 8 (1), 514-521, 2014 | 415 | 2014 |
| Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates JW Lee, H Shichijo, HL Tsai, RJ Matyi Applied Physics Letters 50 (1), 31-33, 1987 | 287 | 1987 |
| Particle size, particle size distribution, and related measurements of supported metal catalysts RJ Matyi, LH Schwartz, JB Butt Catalysis Reviews Science and Engineering 29 (1), 41-99, 1987 | 271 | 1987 |
| Fundamental issues in heteroepitaxy—A department of energy, council on materials science panel report EG Bauer, BW Dodson, DJ Ehrlich, LC Feldman, CP Flynn, MW Geis, ... Journal of Materials Research 5 (4), 852-894, 1990 | 210 | 1990 |
| Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor MA Reed, WR Frensley, RJ Matyi, JN Randall, AC Seabaugh Applied physics letters 54 (11), 1034-1036, 1989 | 169 | 1989 |
| Present state of the Avogadro constant determination from silicon crystals with natural isotopic compositions K Fujii, A Waseda, N Kuramoto, S Mizushima, P Becker, H Bettin, ... ieee Transactions on Instrumentation and Measurement 54 (2), 854-859, 2005 | 112 | 2005 |
| Room‐temperature continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si DG Deppe, N Holonyak Jr, DW Nam, KC Hsieh, GS Jackson, RJ Matyi, ... Applied physics letters 51 (9), 637-639, 1987 | 100 | 1987 |
| Epitaxial layer on a heterointerface H Shichijo, RJ Matyi US Patent 5,959,308, 1999 | 91 | 1999 |
| Small‐angle x‐ray scattering by nylon 6 RJ Matyi, B Crist Jr Journal of Polymer Science: Polymer Physics Edition 16 (8), 1329-1354, 1978 | 84 | 1978 |
| Method of forming an epitaxial layer on a heterointerface H Shichijo, RJ Matyi US Patent 5,238,869, 1993 | 83 | 1993 |
| Resolution, LER, and sensitivity limitations of photoresists GM Gallatin, P Naulleau, D Niakoula, R Brainard, E Hassanein, R Matyi, ... Emerging Lithographic Technologies XII 6921, 417-427, 2008 | 82 | 2008 |
| Spin splitting of single 0D impurity states in semiconductor heterostructure quantum wells MR Deshpande, JW Sleight, MA Reed, RG Wheeler, RJ Matyi Physical review letters 76 (8), 1328, 1996 | 81 | 1996 |
| Reproducibility in X-ray reflectometry: results from the first world-wide round-robin experiment P Colombi, DK Agnihotri, VE Asadchikov, E Bontempi, DK Bowen, ... Journal of Applied Crystallography 41 (1), 143-152, 2008 | 77 | 2008 |
| Substrate orientation and processing effects on GaAs/Si misorientation in GaAs-on-Si grown by MBE RJ Matyi, JW Lee, HF Schaake Journal of electronic materials 17, 87-93, 1988 | 66 | 1988 |
| Vapor growth and characterization of Cr-doped ZnSe crystals CH Su, S Feth, MP Volz, R Matyi, MA George, K Chattopadhyay, A Burger, ... Journal of crystal growth 207 (1-2), 35-42, 1999 | 65 | 1999 |
| Generation of misfit dislocations in GaAs grown on Si HL Tsai, RJ Matyi Applied physics letters 55 (3), 265-267, 1989 | 64 | 1989 |
| Pseudomorphic bipolar quantum resonant-tunneling transistor AC Seabaugh, WR Frensley, JN Randall, MA Reed, DL Farrington, ... IEEE Transactions on Electron Devices 36 (10), 2328-2334, 1989 | 60 | 1989 |
| Co-integration of GaAs MESFET and Si CMOS circuits H Shichijo, RJ Matyi, AH Taddiken IEEE Electron Device Letters 9 (9), 444-446, 1988 | 59 | 1988 |
| Stability of 300 K continuous operation of p‐n AlxGa1−xAs‐GaAs quantum well lasers grown on Si DG Deppe, DW Nam, N Holonyak Jr, KC Hsieh, RJ Matyi, H Shichijo, ... Applied physics letters 51 (16), 1271-1273, 1987 | 57 | 1987 |
