| Direct comparison of ferroelectric properties in Hf0. 5Zr0. 5O2 between thermal and plasma-enhanced atomic layer deposition J Hur, N Tasneem, G Choe, P Wang, Z Wang, AI Khan, S Yu Nanotechnology 31 (50), 505707, 2020 | 53 | 2020 |
| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 27 | 2022 |
| Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals Z Wang, AA Gaskell, M Dopita, D Kriegner, N Tasneem, J Mack, ... Applied Physics Letters 112 (22), 2018 | 27 | 2018 |
| Ferroelectric hafnium zirconium oxide compatible with back-end-of-line process J Hur, YC Luo, N Tasneem, AI Khan, S Yu IEEE Transactions on Electron Devices 68 (7), 3176-3180, 2021 | 26 | 2021 |
| The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ... IEEE Electron Device Letters 42 (8), 1156-1159, 2021 | 24 | 2021 |
| Atomic-scale imaging of polarization switching in an (anti-) ferroelectric memory material: Zirconia (ZrO2) S Lombardo, C Nelson, K Chae, S Reyes-Lillo, M Tian, N Tasneem, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 17 | 2020 |
| Interplay of switching characteristics, cycling endurance and multilevel retention of ferroelectric capacitor J Hur, P Wang, Z Wang, G Choe, N Tasneem, AI Khan, S Yu 2020 IEEE International Electron Devices Meeting (IEDM), 39.5. 1-39.5. 4, 2020 | 14 | 2020 |
| Local epitaxial-like templating effects and grain size distribution in atomic layer deposited Hf0. 5Zr0. 5O2 thin film ferroelectric capacitors SF Lombardo, M Tian, K Chae, J Hur, N Tasneem, S Yu, K Cho, ... Applied Physics Letters 119 (9), 2021 | 13 | 2021 |
| Standby bias improvement of read after write delay in ferroelectric field effect transistors Z Wang, N Tasneem, J Hur, H Chen, S Yu, W Chern, A Khan 2021 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2021 | 12 | 2021 |
| A Janovec‐Kay‐Dunn‐Like Behavior at Thickness Scaling in Ultra‐Thin Antiferroelectric ZrO2 Films N Tasneem, YM Yousry, M Tian, M Dopita, SE Reyes‐Lillo, J Kacher, ... Advanced Electronic Materials 7 (11), 2100485, 2021 | 12 | 2021 |
| Trap capture and emission dynamics in ferroelectric field-effect transistors and their impact on device operation and reliability N Tasneem, Z Wang, Z Zhao, N Upadhyay, S Lombardo, H Chen, J Hur, ... 2021 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2021 | 11 | 2021 |
| Ferroelectric tunnel junction optimization by plasma-enhanced atomic layer deposition J Hur, YC Luo, P Wang, N Tasneem, AI Khan, S Yu 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 11-12, 2020 | 9 | 2020 |
| Exploring argon plasma effect on ferroelectric Hf0. 5Zr0. 5O2 thin film atomic layer deposition J Hur, P Wang, N Tasneem, Z Wang, AI Khan, S Yu Journal of Materials Research 36, 1206-1213, 2021 | 8 | 2021 |
| Remote oxygen scavenging of the interfacial oxide layer in ferroelectric hafnium–zirconium oxide-based metal–oxide–semiconductor structures N Tasneem, H Kashyap, K Chae, C Park, P Lee, SF Lombardo, N Afroze, ... ACS Applied Materials & Interfaces 14 (38), 43897-43906, 2022 | 7 | 2022 |
| Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO2 K Chae, SF Lombardo, N Tasneem, M Tian, H Kumarasubramanian, ... ACS Applied Materials & Interfaces 14 (32), 36771-36780, 2022 | 7 | 2022 |
| Extraction of Preisach model parameters for fluorite-structure ferroelectrics and antiferroelectrics Z Wang, J Hur, N Tasneem, W Chern, S Yu, A Khan Scientific Reports 11 (1), 12474, 2021 | 7 | 2021 |
| Quantum ballistic transport in ultra-small silicon channel cylindrical gate-all-around junction less nanowire transistor using NEGF formalism MMR Adnan, MSB Hafiz, N Tasneem, QDM Khosru 2016 IEEE International Conference on Electron Devices and Solid-State …, 2016 | 7 | 2016 |
| A Ge-channel ferroelectric field effect transistor with logic-compatible write voltage D Das, PV Ravindran, C Park, N Tasneem, Z Wang, H Chen, W Chern, ... IEEE Electron Device Letters 44 (2), 257-260, 2022 | 6 | 2022 |
| Efficiency of ferroelectric field-effect transistors: An experimental study N Tasneem, MM Islam, Z Wang, Z Zhao, N Upadhyay, SF Lombardo, ... IEEE Transactions on Electron Devices 69 (3), 1568-1574, 2022 | 6 | 2022 |
| Comparative study of quantum mechanical Capacitance Voltage characteristics and threshold voltage of two different structures of Junction Less Nanowire Transistor N Tasneem, MMR Adnan, MSB Hafiz, QDM Khosru 2016 IEEE Region 10 Conference (TENCON), 2761-2764, 2016 | 5 | 2016 |
Asif KhanAssistant Professor, ECE and MSE, Georgia TechVerified email at ece.gatech.edu
