Joachim Burghartz

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B RejaeiSharif University of TechnologyVerified email at sharif.ir
K. A. JenkinsResearch Staff Member, IBM T.J. Watson Research CenterVerified email at us.ibm.com
Marian Bartekassistant professor, Delft University of Technology Verified email at tudelft.nl
P.M. (Lina) SarroDelft University of Technology, The NetherlandsVerified email at tudelft.nl
yan zhuangwright state universityVerified email at wright.edu
John D. CresslerRegents Professor, School of Electrical and Computer Engineering Georgia TechVerified email at ece.gatech.edu
Lis NanverVerified email at utwente.nl
J. H. CorreiaFull Professor of Electronics, University of MinhoVerified email at dei.uminho.pt
Marco SpiritoDelft University of TechnologyVerified email at tudelft.nl
Klaus KernMax-Planck-Institute for Solid State Research and Ecole Polytechnique Fédérale de LausanneVerified email at fkf.mpg.de
Slobodan MijalkovicSilvaco Inc., Circuit Simulation DepartmentVerified email at silvaco.com
J.-O. PlouchartIBM Thomas J Watson Research Center: Yorktown Heights, NY, United StatesVerified email at us.ibm.com
Wissem Sfar ZaouiSenior Project Manager, AP Sensing GmbHVerified email at apsensing.com
Rik JosProfessor i mikroelektronik, Chalmers universitetVerified email at chalmers.se
Takao SomeyaProfessor, Department of Electric and Electronic Engineering, The University of TokyoVerified email at ee.t.u-tokyo.ac.jp
Boris MurmannUniversity of HawaiiVerified email at hawaii.edu
Markus B. SchubertUniversity of Stuttgart, Institute for PhotovoltaicsVerified email at ipv.uni-stuttgart.de
sebastien fregoneseCR CNRS, Université de BordeauxVerified email at ims-bordeaux.fr
Shan X. WangStanford UniversityVerified email at stanford.edu
Lawrence LarsonProfessor of EngineeringVerified email at brown.edu

Joachim Burghartz

IMS CHIPS

Verified email at ims-chips.de - Homepage

microelectronics MST nanostructuring flexible electronics GaN technology


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Method for making three dimensional circuit integration CT Black, JN Burghartz, S Tiwari, JJ Welser US Patent 5,998,292, 1999	506	1999
75-GHz f/sub T/SiGe-base heterojunction bipolar transistors GL Patton, JH Comfort, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... IEEE Electron Device Letters 11 (4), 171-173, 1990	477	1990
On the design of RF spiral inductors on silicon JN Burghartz, B Rejaei IEEE transactions on electron devices 50 (3), 718-729, 2003	449	2003
RF circuit design aspects of spiral inductors on silicon JN Burghartz, DC Edelstein, M Soyuer, HA Ainspan, KA Jenkins IEEE Journal of Solid-State Circuits 33 (12), 2028-2034, 1998	374	1998
Microwave inductors and capacitors in standard multilevel interconnect silicon technology JN Burghartz, M Soyuer, KA Jenkins IEEE Transactions on Microwave Theory and Techniques 44 (1), 100-104, 1996	315	1996
Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018	299	2018
SiGe thin film or SOI MOSFET and method for making the same JN Burghartz, BS Meyerson, YC Sun US Patent 5,461,250, 1995	293	1995
Bridging the gap between optical fibers and silicon photonic integrated circuits WS Zaoui, A Kunze, W Vogel, M Berroth, J Butschke, F Letzkus, ... Optics express 22 (2), 1277-1286, 2014	277	2014
Contact resistance and megahertz operation of aggressively scaled organic transistors F Ante, D Kälblein, T Zaki, U Zschieschang, K Takimiya, M Ikeda, ... small 8 (1), 73-79, 2012	262	2012
Integrated circuit inductor JN Burghartz, DC Edelstein, CV Jahnes, CE Uzoh US Patent 5,884,990, 1999	217	1999
Substrate effects in monolithic RF transformers on silicon KT Ng, B Rejaei, JN Burghartz IEEE Transactions on Microwave Theory and Techniques 50 (1), 377-383, 2002	213	2002
Multilevel-spiral inductors using VLSI interconnect technology JN Burghartz, KA Jenkins, M Soyuer IEEE Electron device letters 17 (9), 428-430, 1996	212	1996
IEEE Electron Device Lett GL Patton, JH Comfort, BS Meyerson, EF Crabbe, GJ Scilla, E De Fresart, ... EDL-11 171 (1109), 55.61782, 1990	211	1990
Spiral inductors and transmission lines in silicon technology using copper-damascene interconnects and low-loss substrates JN Burghartz, DC Edelstein, KA Jenkiin, YH Kwark IEEE Transactions on Microwave Theory and Techniques 45 (10), 1961-1968, 1997	204	1997
Integrated circuit toroidal inductor JN Burghartz, DC Edelstein, CV Jahnes, CE Uzoh US Patent 5,793,272, 1998	201	1998
Surface-passivated high-resistivity silicon substrates for RFICs B Rong, JN Burghartz, LK Nanver, B Rejaei, M Van der Zwan IEEE Electron Device Letters 25 (4), 176-178, 2004	200	2004
Small contact resistance and high-frequency operation of flexible low-voltage inverted coplanar organic transistors JW Borchert, B Peng, F Letzkus, JN Burghartz, PKL Chan, K Zojer, ... Nature communications 10 (1), 1119, 2019	197	2019
Ultra-thin chip technology and applications J Burghartz Springer Science & Business Media, 2010	171	2010
Integrated circuit spiral inductor JN Burghartz, DC Edelstein, CV Jahnes, CE Uzoh US Patent 6,114,937, 2000	171	2000
Spray coating of photoresist for pattern transfer on high topography surfaces NP Pham, JN Burghartz, PM Sarro Journal of Micromechanics and Microengineering 15 (4), 691, 2005	161	2005

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