| Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors B Ku, Y Abbas, AS Sokolov, C Choi Journal of Alloys and Compounds 735, 1181-1188, 2018 | 100 | 2018 |
| Compliance-free, digital SET and analog RESET synaptic characteristics of sub-tantalum oxide based neuromorphic device Y Abbas, YR Jeon, AS Sokolov, S Kim, B Ku, C Choi Scientific reports 8 (1), 1228, 2018 | 100 | 2018 |
| The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing H Abbas, Y Abbas, G Hassan, AS Sokolov, YR Jeon, B Ku, CJ Kang, ... Nanoscale 12 (26), 14120-14134, 2020 | 99 | 2020 |
| Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure AS Sokolov, YR Jeon, S Kim, B Ku, D Lim, H Han, MG Chae, J Lee, ... Applied Surface Science 434, 822-830, 2018 | 98 | 2018 |
| Silver‐adapted diffusive memristor based on organic nitrogen‐doped graphene oxide quantum dots (N‐GOQDs) for artificial biosynapse applications AS Sokolov, M Ali, R Riaz, Y Abbas, MJ Ko, C Choi Advanced Functional Materials 29 (18), 1807504, 2019 | 97 | 2019 |
| Towards engineering in memristors for emerging memory and neuromorphic computing: A review AS Sokolov, H Abbas, Y Abbas, C Choi Journal of Semiconductors 42 (1), 013101, 2021 | 61 | 2021 |
| Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive device AS Sokolov, YR Jeon, S Kim, B Ku, C Choi NPG Asia Materials 11 (1), 5, 2019 | 59 | 2019 |
| Study of in situ silver migration in amorphous boron nitride CBRAM device YR Jeon, Y Abbas, AS Sokolov, S Kim, B Ku, C Choi ACS applied materials & interfaces 11 (26), 23329-23336, 2019 | 56 | 2019 |
| Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device S Kim, Y Abbas, YR Jeon, AS Sokolov, B Ku, C Choi Nanotechnology 29 (41), 415204, 2018 | 54 | 2018 |
| Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics A Sokolov, M Ali, H Li, YR Jeon, MJ Ko, C Choi Advanced Electronic Materials 7 (2), 2000866, 2021 | 47 | 2021 |
| Comparative study of Al2O3, HfO2, and HfAlOx for improved self‐compliance bipolar resistive switching AS Sokolov, SK Son, D Lim, HH Han, YR Jeon, JH Lee, C Choi Journal of the American Ceramic Society 100 (12), 5638-5648, 2017 | 46 | 2017 |
| Two-terminal artificial synapse with hybrid organic–inorganic perovskite (CH3NH3) PbI3 and low operating power energy (∼ 47 fJ/μm2) B Ku, B Koo, AS Sokolov, MJ Ko, C Choi Journal of Alloys and Compounds 833, 155064, 2020 | 44 | 2020 |
| Ar ion plasma surface modification on the heterostructured TaOx/InGaZnO thin films for flexible memristor synapse AS Sokolov, YR Jeon, B Ku, C Choi Journal of Alloys and Compounds 822, 153625, 2020 | 40 | 2020 |
| Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing Y Abbas, AS Sokolov, YR Jeon, S Kim, B Ku, C Choi Journal of Alloys and Compounds 759, 44-51, 2018 | 35 | 2018 |
| Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface B Ku, Y Abbas, S Kim, AS Sokolov, YR Jeon, C Choi Journal of Alloys and Compounds 797, 277-283, 2019 | 30 | 2019 |
| Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics Y Abbas, IS Han, AS Sokolov, YR Jeon, C Choi Journal of Materials Science: Materials in Electronics 31, 903-909, 2020 | 27 | 2020 |
| Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots (N-GOQDs) M Ali, A Sokolov, MJ Ko, C Choi Journal of Alloys and Compounds 855, 157514, 2021 | 23 | 2021 |
| Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device D Lee, AS Sokolov, B Ku, YR Jeon, HT Kim, GH Kim, C Choi Applied Surface Science 547, 149140, 2021 | 16 | 2021 |
| The effects of process temperature on the work function modulation of ALD HfO2 MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor YJ Kim, D Lim, HH Han, AS Sergeevich, YR Jeon, JH Lee, SK Son, ... Microelectronic Engineering 178, 284-288, 2017 | 16 | 2017 |
| Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2 WS Jung, D Lim, H Han, AS Sokolov, YR Jeon, C Choi Solid-State Electronics 149, 52-56, 2018 | 8 | 2018 |
Dr. Yawar AbbasResearch Scientist, Khalifa University, Abu Dhabi, UAEПодтвержден адрес электронной почты в домене ku.ac.ae
