A ferroelectric semiconductor field-effect transistor M Si, AK Saha, S Gao, G Qiu, J Qin, Y Duan, J Jian, C Niu, H Wang, W Wu, ... Nature Electronics 2 (12), 580-586, 2019 | 383 | 2019 |
Indium–tin-oxide transistors with one nanometer thick channel and ferroelectric gating M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye ACS nano 14 (9), 11542-11547, 2020 | 84 | 2020 |
Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene G Qiu, C Niu, Y Wang, M Si, Z Zhang, W Wu, PD Ye Nature Nanotechnology 15 (7), 585-591, 2020 | 84 | 2020 |
The resurrection of tellurium as an elemental two-dimensional semiconductor G Qiu, A Charnas, C Niu, Y Wang, W Wu, PD Ye npj 2D Materials and Applications 6 (1), 17, 2022 | 44 | 2022 |
Gate-tunable strong spin-orbit interaction in two-dimensional tellurium probed by weak antilocalization C Niu, G Qiu, Y Wang, Z Zhang, M Si, W Wu, DY Peide Physical Review B 101 (20), 205414, 2020 | 34 | 2020 |
BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 × 1014/cm2 at Oxide/Oxide Interface by the Change of … M Si, A Murray, Z Lin, J Andler, J Li, J Noh, S Alajlouni, C Niu, X Lyu, ... IEEE Transactions on Electron Devices 68 (7), 3195-3199, 2021 | 27 | 2021 |
Nanometer-thick oxide semiconductor transistor with ultra-high drain current Z Lin, M Si, V Askarpour, C Niu, A Charnas, Z Shang, Y Zhang, Y Hu, ... ACS nano 16 (12), 21536-21545, 2022 | 11 | 2022 |
Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well C Niu, G Qiu, Y Wang, M Si, W Wu, PD Ye Nano letters 21 (18), 7527-7533, 2021 | 11 | 2021 |
Tunable Chirality-Dependent Nonlinear Electrical Responses in 2D Tellurium C Niu, G Qiu, Y Wang, P Tan, M Wang, J Jian, H Wang, W Wu, PD Ye Nano letters 23 (18), 8445-8453, 2023 | 9* | 2023 |
Tunable circular photogalvanic and photovoltaic effect in 2D tellurium with different chirality C Niu, S Huang, N Ghosh, P Tan, M Wang, W Wu, X Xu, PD Ye Nano Letters 23 (8), 3599-3606, 2023 | 6 | 2023 |
ACS Nano 14, 11542 (2020) M Si, J Andler, X Lyu, C Niu, S Datta, R Agrawal, PD Ye | 5 | |
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing Z Zhang, Z Lin, C Niu, M Si, MA Alam, DY Peide 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 4 | 2023 |
Optically Gated Electrostatic Field-Effect Thermal Transistor S Huang, N Ghosh, C Niu, YP Chen, PD Ye, X Xu Nano Letters, 2024 | | 2024 |
Exotic Spin-Orbit Torques in Chiral Tellurium S Li, C Niu, A Hoffmann, PP Ye, R Liu Bulletin of the American Physical Society, 2024 | | 2024 |
Strong spin-orbit-interaction probed by weak antilocalization in p-type 2D Te under pressure P Tan, C Niu, PP Ye, W Wu Bulletin of the American Physical Society, 2024 | | 2024 |
Comprehensive Magnetotransport Characterizations of the Chiral Crystal Te Z Hua, C Niu, P Tan, H Liu, G Shi, PP Ye, P Xiong Bulletin of the American Physical Society, 2024 | | 2024 |
Landau Levels in a Weyl-type Spin-orbit Coupling Band C Niu, P Tan, Z Zhang, W Wu, PP Ye Bulletin of the American Physical Society, 2024 | | 2024 |
Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited InO Thin-Film Transistors C Niu, Z Lin, V Askarpour, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
Record-Low Metal to Semiconductor Contact Resistance in Atomic-Layer-Deposited In2O3 TFTs Reaching the Quantum Limit C Niu, Z Lin, Z Zhang, P Tan, M Si, Z Shang, Y Zhang, H Wang, PD Ye 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |
First Determination of Thermal Resistance and Thermal Capacitance of Atomic-Layer-Deposited In2O3 Transistors JY Lin, Z Zhang, S Alajlouni, PY Liao, Z Lin, C Niu, A Shakouri, PD Ye 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | | 2023 |