Globus-M results as the basis for a compact spherical tokamak with enhanced parameters Globus-M2 VK Gusev, EA Azizov, AB Alekseev, AF Arneman, NN Bakharev, ... Nuclear Fusion 53 (9), 093013, 2013 | 113 | 2013 |
Optical properties of nanodiamond layers AE Aleksenskii, VY Osipov, AY Vul’, BY Ber, AB Smirnov, VG Melekhin, ... Physics of the solid State 43, 145-150, 2001 | 98 | 2001 |
Review of Globus-M spherical tokamak results VK Gusev, NN Bakharev, VA Belyakov, BY Ber, EN Bondarchuk, ... Nuclear Fusion 55 (10), 104016, 2015 | 73 | 2015 |
Overview of results obtained at the Globus-M spherical tokamak VK Gusev, SE Aleksandrov, VK Alimov, II Arkhipov, BB Ayushin, ... Nuclear fusion 49 (10), 104021, 2009 | 53 | 2009 |
Mg‐Doped Hexagonal InN/Al2O3 Films Grown by MBE VV Mamutin, VA Vekshin, VY Davydov, VV Ratnikov, YA Kudriavtsev, ... physica status solidi (a) 176 (1), 373-378, 1999 | 48 | 1999 |
Interplay of kinetics and thermodynamics in molecular beam epitaxy of (Mg, Zn, Cd)(S, Se) S Ivanov, S Sorokin, I Krestnikov, N Faleev, B Ber, I Sedova, ... Journal of crystal growth 184, 70-74, 1998 | 46 | 1998 |
Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN: Mg layers WV Lundin, AV Sakharov, EE Zavarin, MA Sinitsyn, AE Nikolaev, ... Semiconductors 43 (7), 963-967, 2009 | 37 | 2009 |
Determination of the Mn concentration in GaMnAs LX Zhao, RP Campion, PF Fewster, RW Martin, BY Ber, AP Kovarsky, ... Semiconductor science and technology 20 (5), 369, 2005 | 37 | 2005 |
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy BY Ber, YA Kudriavtsev, AV Merkulov, SV Novikov, DE Lacklison, ... Semiconductor science and technology 13 (1), 71, 1998 | 36 | 1998 |
Globus-M plasma physics research for fusion application and compact neutron source development VK Gusev, NN Bakharev, BY Ber, VV Bulanin, FV Chernyshev, ... Plasma Physics and Controlled Fusion 58 (1), 014032, 2015 | 35 | 2015 |
Properties of Si‐Doped GaN Layers Grown by HVPE AV Fomin, AE Nikolaev, IP Nikitina, AS Zubrilov, MG Mynbaeva, ... physica status solidi (a) 188 (1), 433-437, 2001 | 34 | 2001 |
Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques B Ber, P Bábor, PN Brunkov, P Chapon, MN Drozdov, R Duda, ... Thin Solid Films 540, 96-105, 2013 | 31 | 2013 |
Radiation-stimulated photoluminescence in electron irradiated 4H-SiC AA Lebedev, BY Ber, NV Seredova, DY Kazantsev, VV Kozlovski Journal of Physics D: Applied Physics 48 (48), 485106, 2015 | 29 | 2015 |
Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range PN Aruev, MM Barysheva, BY Ber, NV Zabrodskaya, VV Zabrodskii, ... Quantum Electronics 42 (10), 943, 2012 | 27 | 2012 |
High growth rate MOVPE of Al (Ga) N in planetary reactor WV Lundin, AE Nikolaev, MA Yagovkina, PN Brunkov, MM Rozhavskaya, ... Journal of crystal growth 352 (1), 209-213, 2012 | 27 | 2012 |
Incorporation of Mg in GaN grown by molecular beam epitaxy JW Orton, CT Foxon, TS Cheng, SE Hooper, SV Novikov, BY Ber, ... Journal of crystal growth 197 (1-2), 7-11, 1999 | 27 | 1999 |
Influence of the additional p+ doped layers on the properties of AlGaAs/InGaAs/AlGaAs heterostructures for high power SHF transistors DV Gulyaev, KS Zhuravlev, AK Bakarov, AI Toropov, DY Protasov, ... Journal of Physics D: Applied Physics 49 (9), 095108, 2016 | 23 | 2016 |
Study of GaN doping with carbon from propane in a wide range of MOVPE conditions WV Lundin, AV Sakharov, EE Zavarin, DY Kazantsev, BY Ber, ... Journal of Crystal Growth 449, 108-113, 2016 | 22 | 2016 |
Computer simulation of the sputtering of polyatomic multilayered materials with consideration of the spatial overlapping of the collision cascades YV Trushin, BJ Ber, VS Kharlamov, EE Zhurkin Journal of Nuclear Materials 233, 991-995, 1996 | 22 | 1996 |
Effect of deposition parameters on the properties of In2O3/InP junctions V Korobov, Y Shapira, B Ber, K Faleev, D Zushinskiy Journal of applied physics 75 (4), 2264-2269, 1994 | 22 | 1994 |